Charge carrier transport facilitated by strain
View Patent ↗A semiconductor structure and formation thereof. The semiconductor structure has a first semiconductor layer with a first lattice structure and a second epitaxial semiconductor layer that is lattice-matched with the first semiconductor layer. At least two source/drain regions, which have a second lattice structure, penetrate the second semiconductor layer and contact the first semiconductor layer. A portion of the second semiconductor layer is between the source/drain regions and has a degree of uniaxial strain that is based, at least in part, on a difference between the first lattice structure and the second lattice structure.
1. A semiconductor structure comprising:
a first semiconductor layer with a first lattice structure;
a second semiconductor layer that is lattice-matched and in contact with the first semiconductor layer; and
at least two source/drain regions with a second lattice structure, wherein the source/drain regions are in contact the second semiconductor layer and the first semiconductor layer, wherein at least a portion of the second semiconductor layer is between the source/drain regions, wherein the at least portion has a degree of uniaxial strain that is based, at least in part, on a difference between the first lattice structure and the second lattice structure.
2. The semiconductor structure of claim 1 , wherein the first semiconductor layer is further comprised of a semi-insulating semiconductor material.
3. The semiconductor structure of claim 1 , wherein one or both of: the second semiconductor layer and the source/drain regions are further comprised of compound semiconductors.
4. The semiconductor structure of claim 1 , wherein one or both of: the second semiconductor layer and the source/drain regions are further comprised of ternary semiconductors.
5. The semiconductor structure of claim 1 , wherein one or both of: the second semiconductor layer and the source/drain regions are further comprised of III-V semiconductors.
6. The semiconductor structure of claim 1 , wherein one or both of: the second semiconductor layer and the source/drain regions include indium.
7. The semiconductor structure of claim 1 , wherein one or both of: the second semiconductor layer and the source/drain regions are further comprised of alloys of indium arsenide and gallium arsenide.
8. The semiconductor structure of claim 1 , wherein the second semiconductor layer is further comprised of In 0.53 Ga 0.47 As and the source/drain regions are further comprised of In y Ga (1−y) As, and wherein y has a range between approximately 0.53 and 1.
9. The semiconductor structure of claim 1 , wherein the second semiconductor layer is further comprised of In 0.53 Ga 0.47 As and the source/drain regions are further comprised of In y Ga (1−y) As, and wherein y has a range between 0 and approximately 0.53.
10. A semiconductor structure comprising:
a semi-insulating semiconductor layer;
a semiconductor layer composed of In 0.53 Ga 0.47 As, wherein the semiconductor layer is epitaxial with the semi-insulating semiconductor layer, wherein the semiconductor layer is lattice-matched with the semi-insulating semiconductor layer; and
at least two source/drain regions composed of In y Ga (1−y) As, wherein y has a range between 0 and 1, wherein the source/drain regions penetrate the semiconductor layer and contact the semi-insulating semiconductor layer, wherein the source/drain regions are lattice-mismatched with the semi-insulating semiconductor layer and the semiconductor layer, wherein a portion of the semiconductor layer is between source/drain regions, wherein the portion has a degree of uniaxial strain that is based, at least in part, on the lattice-mismatch between the source/drain regions and both the semi-insulating semiconductor layer and the semiconductor layer.
11. The semiconductor structure of claim 10 , wherein y has a range between approximately 0.53 and 1.
12. The semiconductor structure of claim 10 , wherein y has a range between 0 and approximately 0.53.