Ultrananocrystalline diamond contacts for electronic devices
A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.
1. A device, comprising:
a diamond substrate including electronic circuitry disposed within the diamond substrate;
at least one electrical contact disposed on the diamond substrate, the at least one electrical contact including a p-doped or an n-doped ultrananocrystalline diamond, the electrical contacts in electrical communication with the electronic circuitry.
2. The device of claim 1 , wherein the p-type dopant includes boron.
3. The device of claim 2 , wherein the p-type dopant includes a boron concentration in the range of about 1×10 21 atoms/cm 3 to about 9×10 21 atoms/cm 3 .
4. The device of claim 1 , wherein the n-type dopant includes nitrogen.
5. The device of claim 4 , wherein the ultrananocrystalline diamond film has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %.
6. The device of claim 1 , wherein the device includes at least one of a solar cell, photocell, diode, light emitting diode, a sensor, a detector, a transistor, a field effect transistor, an integrated circuit, a read only memory and a random access memory.
7. The device of claim 1 , wherein the at least one electrical contact has a thickness in the range of about 50 nm to about 200 nm.
8. An X-ray monitor, comprising:
a diamond substrate having a surface; and
a plurality of electrical contacts disposed on the surface, the plurality of electrical contacts including at least one of a p-doped and a n-doped ultrananocrystalline diamond,
wherein the electrical contacts have an X-ray absorption of less than about 1%.
9. The X-ray monitor of claim 8 , wherein the p-type dopant includes boron.
10. The X-ray monitor of claim 9 , wherein the p-type dopant includes a boron concentration in the range of about 1×10 21 atoms/cm 3 to about 9×10 21 atoms/cm 3 .
11. The X-ray monitor of claim 8 , wherein the n-type dopant includes nitrogen.
12. The X-ray monitor of claim 11 , wherein the ultrananocrystalline diamond film has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %.
13. The X-ray monitor of claim 8 ; wherein the surface is a first surface, the diamond substrate further comprising:
a second surface disposed opposite the first surface; and
a plurality of second surface ultrananocrystalline diamond electrical contacts, selected from a group consisting of p-doped ultrananocrystalline diamond electrical contacts and n-doped ultrananocrystalline diamond electrical contacts, disposed on the second surface.
14. The X-ray monitor of claim 13 , wherein the plurality of electrical contacts and the plurality of second surface electrical contacts do not oxidize up to a temperature of about 800 degrees Celsius in vacuum.
15. The X-ray monitor of claim 13 , wherein the X-ray monitor has a linear flux response to X-rays having energy in the range of 100 eV to 30 keV.
16. The X-ray monitor of claim 8 , further wherein the plurality of ultrananocrystalline diamond electrical contacts have an X-ray absorption of less than about 1%.