Perovskite hybrid solar cells
Perovskite hybrid solar cells utilize a bulk heterojunction (BHJ) active layer that is formed as a composite of an organometal halide perovskite and a water soluble fullerene, such as A 10 C 60 . In alternative embodiments, the BHJ active layer may be formed as a composite of an organometal halide perovskite material and a fullerene, such as PC 61 BM. Thus, the fullerene acts as an electron extraction acceptor within the BHJ, allowing such solar cells to more efficiently transport the electrons from the fullerene/perovskite interface to a fullerene-based electron transport layer (ETL). As a result, increased fill factor (FF), as well as improvements in the short-circuit current density (J SC ) and power conversion efficiency (PCE) are achieved by the solar cells.
1. A method of forming a bulk heterojunction active layer of a solar cell comprising:
providing an n-type perovskite hybrid semiconductor material;
combining said perovskite hybrid semiconductor material with a water-soluble or a non-water-soluble fullerene to form a composite material, wherein said composite material is formed by the method of:
combining a methyl ammonium iodide (MAI) material and said water-soluble fullerene or said non-water-soluble fullerene with ethanol to form a precursor material;
providing a lead iodide material; and
applying said precursor material to said lead iodide material to form said composite material of methylammonium lead iodide perovskite and water-soluble fullerene; and
applying said composite material in the solar cell as the bulk heterojunction active layer.
2. The method of claim 1 , further comprising:
placing an electron transport layer adjacent to at least one surface of said bulk heterojunction active layer; and
placing a hole transport layer adjacent to at least one other surface of said active layer.
3. The method of claim 2 , wherein said electron transport layer comprises a layer of fullerene positioned directly adjacent to the bulk heterojunction active layer.
4. The method of claim 3 , wherein said layer of fullerene of said electron transport layer comprises PC 61 BM or derivatives thereof.
5. The method of claim 1 , wherein said applying step is performed by spin casting.
6. The method of claim 5 , further comprising thermally annealing the bulk heterojunction active layer.
7. The method of claim 2 , further comprising:
placing an electrode adjacent to said electron transport layer; and
placing a second electrode adjacent to said hole transport layer, wherein at least one of said first or second electrodes is an at least partially light transparent electrode.
8. The method of claim 1 , wherein said water-soluble fullerene comprises A 10 C 60 or derivatives thereof, and said non-water-soluble fullerene comprises PC 61 BM or derivatives thereof.
9. The method of claim 1 , wherein a concentration of said water-soluble fullerene comprising A 10 C 60 is between 2.5 mg/ml to 20 mg/ml, and a concentration of said MAI is 35 mg/ml in said precursor material.
10. A method of forming a planar heterojunction active layer of a solar cell comprising:
solution processing a perovskite hybrid semiconductor precursor material comprising ethanol, methyl ammonium iodide (MAI), and fullerene to form a perovskite hybrid semiconductor material; and
providing a layer of said perovskite hybrid semiconductor material in the solar cell as the planar heterojunction active layer.
11. The method of claim 10 , wherein said step of solution processing comprises:
providing a lead iodide material; and
applying said precursor material to said lead iodide material to form said perovskite material.
12. The method of claim 11 , further comprising:
placing an electron transport layer adjacent to at least one surface of said active layer;
placing a hole transport layer adjacent to at least one other surface of said active layer.
13. The method of claim 12 , wherein said electron transport layer comprises a layer of fullerene or derivative thereof positioned directly adjacent to said active layer.
14. The method of claim 13 , wherein said layer of fullerene comprises PC 61 BM or derivatives thereof.
15. The method of claim 12 , further comprising:
placing a first electrode adjacent to said hole transport layer; and
placing a second electrode adjacent to said electron transport layer, wherein at least one of said first or second electrodes is an at least partially light transparent electrode.
16. The method of claim 11 , wherein said applying step is performed by spin casting.
17. The method of claim 16 , further comprising thermally annealing said planar heterojunction active layer.