Communication device and method of making the same
A communication device for receiving an interrogation signal at a first carrier frequency and for transmitting a response signal at a second carrier frequency is disclosed. The interrogation signal comprises the first carrier frequency modulated at the second carrier frequency. The communication device includes a sensor coupled to a demodulator. The sensor receives a low frequency input used to further modulate the interrogation signal. The demodulator demodulates the low frequency input from the first carrier frequency to thereby generate the response signal comprising the second carrier frequency and the low frequency input. The demodulator preferably includes a pyroelectric demodulator, a piezoelectric demodulator, or a detector diode. The demodulator preferably has a frequency response less than the first carrier frequency but greater than the second carrier frequency.
1. A communication device comprising:
a sensor coupled to a demodulator, wherein the demodulator comprises a pyroelectric demodulator; and
a low-pass filter coupled to the demodulator;
wherein the pyroelectric demodulator includes:
a first silicon dioxide layer over a silicon substrate;
a zinc oxide layer over the first silicon dioxide layer;
a first platinum layer over the zinc oxide layer;
a PZT layer over the first platinum layer;
a second platinum layer over the PZT layer;
a second silicon dioxide layer over the PZT layer;
a tantalum nitride layer over the second silicon dioxide layer;
a third platinum layer over the tantalum nitride layer; and
a layer over the third platinum layer.
2. The communication device of claim 1 further comprising, a band-pass filter coupled to the sensor.
3. The communication device of claim 1 further comprising, an input antenna coupled to the sensor.
4. The communication device of claim 1 further comprising, an output antenna coupled to the pyroelectric demodulator.
5. The communication device of claim 4 , wherein an output signal of the pyroelectric demodulator is coupled to the output antenna such that the output signal is transmitted from the output antenna without further modulation onto any carrier frequency.
6. The communication device of claim 1 , wherein the sensor comprises an impedance varying sensor.
7. The communication device of claim 1 , wherein the layer over the third platinum layer comprises at least one of gold, nickel, or titanium.
8. A communication device comprising:
a sensor coupled to a demodulator, wherein the demodulator comprises a pyroelectric demodulator, wherein the pyroelectric demodulator comprises:
a layer that comprises silicon over a silicon substrate;
a layer that comprises at least one of zinc oxide or TiO x over the layer that comprises silicon;
a first platinum layer over the layer that comprises at least one of zinc oxide or TiO x ;
a first layer over the first platinum layer;
a second layer over the first platinum layer;
a layer over the second layer;
a third platinum layer over the layer over the second layer; and
a layer over the third platinum layer.
9. The communication device of claim 8 , wherein the second layer comprises silicon or silicon dioxide.
10. The communication device of claim 8 , wherein the layer over the second layer comprises tantalum or tantalum nitride.
11. The communication device of claim 8 , wherein the layer over the third platinum layer comprises at least one of gold, nickel, and titanium.
12. The communication device of claim 8 , wherein the sensor comprises an impedance varying sensor coupled to a resistor.
13. The communication device of claim 8 , wherein a thickness of the layer over the third platinum layer is approximately 5500 Angstroms.
14. The communication device of claim 8 , wherein a thickness of the second layer is approximately 1000 Angstroms.
15. The communication device of claim 8 further comprising, a second platinum layer over the first layer.
16. The communication device of claim 8 , wherein the first layer comprises PZT or PLZT.
17. The communication device of claim 8 , wherein a thickness of the first layer is approximately 3000 Angstroms.