Selective surface treatment of thallium bromide (TLBR)-based detectors to improve longevity and/or restore operational capacity thereof

1. A method of improving operational longevity of a thallium bromide (TlBr)-based detector, the method comprising:

selectively treating one or more surfaces of the TlBr-based detector to produce a surface substantially comprising pure TlBr; and

wherein prior to selective treatment the one or more surfaces of the TlBr-based detector are compositionally characterized by some or all of the Br having been replaced with one or more alternate halogen components.

2. The method as recited in claim 1 , wherein the one or more surfaces that are selectively treated comprise at least sidewalls of the TlBr-based detector.

3. The method as recited in claim 1 , wherein the one or more surfaces that are selectively treated comprise portions of at least a top surface of the detector, the portions of the top surface being exposed rather than coupled to or located under an electrode coupled to or formed on the top surface.

4. The method as recited in claim 1 , wherein selectively treating the one or more surfaces of the TlBr-based detector comprises etching the one or more surfaces with a solution comprising an etchant selected from: water, bromine methanol, a peroxide, ammonium hydroxide, and potassium hydroxide.

5. The method as recited in claim 1 , wherein selectively treating the one or more surfaces of the TlBr-based detector comprises:

applying a mask or a protective coating to other surfaces of the TlBr-based detector; and

etching the one or more surfaces of the TlBr-based detector in an etching solution without etching the other surfaces of the TlBr-based detector.

6. The method as recited in claim 1 , wherein selectively treating the one or more surfaces smoothes the one or more surfaces to an average surface roughness of approximately 1 μm RMS or less.

7. The method as recited in claim 1 , wherein selectively treating the one or more surfaces removes TlBr and alternate halogen component(s) incorporated therewith to a predetermined depth; and

wherein the predetermined depth is in a range from approximately 0.1 μm to approximately 100 μm.

8. A method of forming a thallium bromide (TlBr)-based detector exhibiting improved operational longevity, the method comprising:

selectively treating one or more surfaces of the TlBr-based detector to replace Br therein with one or more alternate halogen components while also substantially avoiding replacing some or all of the Br in other surfaces of the TlBr-based detector with the one or more alternate halogen components; and

wherein the one or more surfaces substantially comprise pure TlBr following the selective treatment thereof; and

wherein the one or more surfaces comprise at least sidewalls of the TlBr based detector.

9. The method as recited in claim 8 , wherein selectively treating the one or more surfaces of the TlBr-based detector comprises:

applying a mask or a protective coating to the other surfaces of the TlBr-based detector; and

etching the masked or protected TlBr-based detector in a solution comprising one or more of the alternate halogen components.

10. The method as recited in claim 8 , wherein the other surfaces substantially comprise pure TlBr following the selective treatment of the one or more surfaces of the TlBr-based detector; and

wherein the other surfaces comprise portions of at least a top surface of the TlBr-based detector, the portions of the top surface being exposed rather than coupled to or located under an electrode coupled to or formed on the top surface.

11. The method as recited in claim 8 , comprising: polishing the other surfaces of the TlBr-based detector to an average surface roughness of approximately 1 μm RMS or less; and

wherein the other surfaces substantially comprise pure TlBr following the selective treatment of the one or more surfaces of the TlBr-based detector.

12. A method of selectively treating one or more surfaces of a thallium bromide (TlBr)-based detector to improve operational longevity thereof or restore operational capability as a room temperature detector thereto, the method comprising:

detecting either a failure of the TlBr-based detector or degradation of one or more surfaces of the TlBr-based detector, the failure or degradation comprising formation of a complete or partial conductive pathway between electrodes coupled to the TlBr-based detector; and

selectively treating at least portions of the one or more surfaces of the TlBr-based detector exhibiting either the failure or the degradation, wherein selectively treating the at least portions of the one or more surfaces of the TlBr-based detector comprises etching the at least portions of the one or more surfaces of the TlBr-based detector with a solution comprising an etchant selected from: water, bromine methanol, a peroxide, ammonium hydroxide, and potassium hydroxide; and

wherein the at least portions that are etched substantially comprise pure TlBr following the selective treatment.

13. The method as recited in claim 12 , wherein selectively treating the at least portions of the one or more surfaces of the TlBr-based detector comprises polishing the at least portions of the one or more surfaces of the TlBr-based detector; and

wherein the at least portions that are polished substantially comprise pure TlBr following the selective treatment.

14. The method as recited in claim 12 , wherein the at least portions that are selectively treated comprise at least sidewalls of the TlBr-based detector; and

wherein the at least portions that are selectively treated substantially comprise pure TlBr following the selective treatment.

15. The method as recited in claim 12 , wherein the at least portions that are selectively treated comprise portions of at least a top surface of the TlBr-based detector, the portions of the top surface being exposed rather than coupled to or located under an electrode coupled to or formed on the top surface; and

wherein the at least portions that are selectively treated substantially comprise pure TlBr following the selective treatment.

16. The method as recited in claim 12 , wherein selectively treating the one or more surfaces smoothes the one or more surfaces to an average surface roughness of approximately 1 μm RMS or less.

17. A thallium bromide (TlBr)-based detector, comprising:

a bulk portion comprising TlBr, the bulk portion having one or more sidewalls, a top surface, and a bottom surface; and

wherein at least the sidewalls of the bulk portion comprise substantially no alternate halogen component(s) to a predetermined depth in a range from approximately 0.1 μm to approximately 100 μm from the sidewalls of the bulk portion;

wherein first portions of the top surface of the bulk portion comprise one or more alternate halogen components to a predetermined depth in a range from approximately 0.1 μm to approximately 100 μm from the top surface of the bulk portion;

wherein other portions of the top surface of the bulk portion comprise substantially no alternate halogen components to a predetermined depth in a range from approximately 0.1 μm to approximately 100 μm from the top surface of the bulk portion; and

wherein the first portions of the top surface correspond to positions on the top surface of the detector to which one or more electrodes are configured to couple.

18. The detector as recited in claim 17 , wherein the other portions of the top surface are region(s) thereof exposed to a surrounding environment.

19. The detector as recited in claim 17 , wherein first portions of the bottom surface of the bulk portion comprise one or more alternate halogen components to a predetermined depth in a range from approximately 0.1 μm to approximately 100 μm from the bottom surface of the bulk portion;

wherein other portions of the bottom surface of the bulk portion comprise substantially no alternate halogen components to a predetermined depth in a range from approximately 0.1 μm to approximately 100 μm from the bottom surface of the bulk portion; and

wherein the first portions of the bottom surface correspond to positions on the bottom surface of the detector to which one or more electrodes are configured to couple.

20. The detector as recited in claim 17 , wherein the other portions of the bottom surface are region(s) thereof exposed to a surrounding environment.

21. The detector as recited in claim 17 , wherein the alternate halogen component(s) are selected from chlorine, fluorine, and iodine.