Semiconductor device, light-emitting device, and electronic device
An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.
1. A light-emitting device comprising:
a light-emitting element;
a first transistor;
a second transistor capable of supplying current to the light-emitting element;
a third transistor;
a capacitor;
a data signal line; and
a potential supply line,
wherein the data signal line is electrically connected to one of a source and a drain of the first transistor,
wherein the other one of the source and the drain of the first transistor is electrically connected to a first gate of the second transistor,
wherein a second gate of the second transistor is electrically connected to one of a source and a drain of the third transistor and a first terminal of the capacitor,
wherein the other one of the source and the drain of the third transistor is electrically connected to the potential supply line, and
wherein one of a source and a drain of the second transistor is electrically connected to a second terminal of the capacitor and the light-emitting element.
2. The light-emitting device according to claim 1 , wherein a channel formation region of the second transistor comprises an oxide semiconductor.
3. The light-emitting device according to claim 1 , wherein a channel formation region of the second transistor comprises indium, gallium and zinc.
4. The light-emitting device according to claim 1 , further comprising a capacitor electrically connected to the first gate of the second transistor.
5. The light-emitting device according to claim 1 , further comprising a transistor whose one of a source and a drain is electrically connected to the second gate of the second transistor and whose the other one of the source and the drain is electrically connected to the other one of the source and the drain of the second transistor.
6. The light-emitting device according to claim 1 , wherein the light-emitting element is an electroluminescent element.
7. An electronic device comprising:
a display portion comprising the light-emitting device according to claim 1 ,
wherein the electronic device is configured to control a threshold voltage of the second transistor by a potential of the second gate of the second transistor.
8. A light-emitting device comprising:
a light-emitting element;
a first transistor;
a second transistor capable of supplying current to the light-emitting element;
a third transistor;
a capacitor;
a data signal line; and
a potential supply line,
wherein the data signal line is directly connected to one of a source and a drain of the first transistor,
wherein the other one of the source and the drain of the first transistor is directly connected to a first gate of the second transistor,
wherein a second gate of the second transistor is directly connected to one of a source and a drain of the third transistor and a first terminal of the capacitor,
wherein the other one of the source and the drain of the third transistor is directly connected to the potential supply line, and
wherein one of a source and a drain of the second transistor is directly connected to a second terminal of the capacitor and the light-emitting element.
9. The light-emitting device according to claim 8 , wherein a channel formation region of the second transistor comprises an oxide semiconductor.
10. The light-emitting device according to claim 8 , wherein a channel formation region of the second transistor comprises indium, gallium and zinc.
11. The light-emitting device according to claim 8 , further comprising a capacitor electrically connected to the first gate of the second transistor.
12. The light-emitting device according to claim 8 , further comprising a transistor whose one of a source and a drain is electrically connected to the second gate of the second transistor and whose the other one of the source and the drain is electrically connected to the other one of the source and the drain of the second transistor.
13. The light-emitting device according to claim 8 , wherein the light-emitting element is an electroluminescent element.
14. An electronic device comprising:
a display portion comprising the light-emitting device according to claim 8 ,
wherein the electronic device is configured to control a threshold voltage of the second transistor by a potential of the second gate of the second transistor.