Display device, display module, and electronic device
A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.
1. A light-emitting device comprising a pixel portion, the pixel portion comprising:
a first transistor, a second transistor, and a third transistor, and a light-emitting element,
wherein one of a source and a drain of the second transistor is electrically connected to a signal line which is configured to supply a signal corresponding to image data,
wherein the second transistor is configured to control supply of the signal corresponding to the image data to a pixel,
wherein one of a source and a drain of the third transistor is electrically connected to a wiring,
wherein the other of the source and the drain of the third transistor is electrically connected to a pixel electrode of the light-emitting element,
wherein the light-emitting device further comprises:
a first conductive layer functioning as a first gate electrode of the first transistor;
a second conductive layer over the first conductive layer, the second conductive layer functioning as a second gate electrode of the first transistor;
a third conductive layer over the first conductive layer, the third conductive layer functioning as a gate electrode of the third transistor;
a fourth conductive layer over the second conductive layer and the third conductive layer, the fourth conductive layer functioning as the wiring;
a fifth conductive layer over the second conductive layer and the third conductive layer, the fifth conductive layer functioning as one of the source and the drain of the second transistor;
a sixth conductive layer over the second conductive layer and the third conductive layer, the sixth conductive layer functioning as the other of the source and the drain of the third transistor;
a seventh conductive layer over the second conductive layer and the third conductive layer;
an eighth conductive layer functioning as a current supply line; and
a ninth conductive layer functioning as the signal line,
wherein the fifth conductive layer is electrically connected to the ninth conductive layer,
wherein the sixth conductive layer is electrically connected to the pixel electrode,
wherein the seventh conductive layer is electrically connected to the eighth conductive layer,
wherein, in a top view, the eighth conductive layer comprises a region overlapping with the fourth conductive layer,
wherein, when the eighth conductive layer and the light-emitting element are in a conduction state through the seventh conductive layer, a channel region of the first transistor, and the sixth conductive layer, a current based on the image data flows in the light-emitting element, and
wherein the eighth conductive layer and the ninth conductive layer are positioned over the fourth conductive layer, the fifth conductive layer, the sixth conductive layer, and the seventh conductive layer.
2. The light-emitting device according to claim 1 , wherein the second conductive layer and the third conductive layer are in the same layer.
3. The light-emitting device according to claim 1 , wherein the fourth conductive layer, the fifth conductive layer, the sixth conductive layer, and the seventh conductive layer are in the same layer.
4. The light-emitting device according to claim 1 , wherein the eighth conductive layer and the ninth conductive layer are in the same layer.
5. The light-emitting device according to claim 1 ,
wherein each of the eighth conductive layer and the ninth conductive layer comprises a three-layer structure comprising a first film, a second film over the first film, and a third film over the second film,
wherein each of the first film and the third film comprises a titanium film or a titanium nitride film, and
wherein the second film comprises an aluminum film or a copper film.
6. The light-emitting device according to claim 1 , wherein the channel region of the first transistor comprises a polycrystalline semiconductor.
7. The light-emitting device according to claim 1 ,
further comprising an insulating layer over the sixth conductive layer,
wherein the sixth conductive layer is electrically connected to the pixel electrode through an opening included in the insulating layer.
8. The light-emitting device according to claim 1 ,
wherein a gate electrode of the second transistor is electrically connected to a first scan line, and
wherein a gate electrode of the third transistor is electrically connected to a second scan line which is different from the first scan line.
9. A light-emitting device comprising a pixel portion, the pixel portion comprising:
a first transistor, a second transistor, and a third transistor, and a light-emitting element,
wherein one of a source and a drain of the second transistor is electrically connected to a signal line which is configured to supply a signal corresponding to image data,
wherein the second transistor is configured to control supply of the signal corresponding to the image data to a pixel,
wherein one of a source and a drain of the third transistor is electrically connected to a wiring,
wherein the other of the source and the drain of the third transistor is electrically connected to a pixel electrode of the light-emitting element, and
wherein the light-emitting device further comprises:
a first conductive layer functioning as a first gate electrode of the first transistor;
a second conductive layer over the first conductive layer, the second conductive layer functioning as a second gate electrode of the first transistor;
a third conductive layer over the first conductive layer, the third conductive layer functioning as a gate electrode of the third transistor;
a fourth conductive layer over the second conductive layer and the third conductive layer, the fourth conductive layer functioning as the wiring;
a fifth conductive layer over the second conductive layer and the third conductive layer, the fifth conductive layer functioning as one of the source and the drain of the second transistor;
a sixth conductive layer over the second conductive layer and the third conductive layer, the sixth conductive layer functioning as the other of the source and the drain of the third transistor;
a seventh conductive layer over the second conductive layer and the third conductive layer;
an eighth conductive layer functioning as a current supply line; and
a ninth conductive layer functioning as the signal line.
10. The light-emitting device according to claim 9 , wherein a channel region of the first transistor comprises a polycrystalline semiconductor.
11. The light-emitting device according to claim 9 ,
wherein a gate electrode of the second transistor is electrically connected to a first scan line, and
wherein a gate electrode of the third transistor is electrically connected to a second scan line which is different from the first scan line.