High performance capacitors in planar back gates CMOS

1. A method of manufacturing a dual-gate CMOS structure, comprising:

forming a first plate buried in an insulating layer such that a portion of the insulating layer provides a spacing between a top surface of the insulating layer and the first plate;

while the portion of the insulating layer is arranged over the first plate, forming a second plate above the portion of the insulating layer electrically corresponding to the first plate;

providing an isolation structure between the first plate and the second plate; and

doping the isolation structure to form diffusion regions between the first plate and the second plate, wherein:

the isolation structure includes a dielectric layer surrounding a silicon island and in contact with the insulating layer, and

the insulating layer forms a back plate insulating structure between the first plate and the silicon island.

2. The method of claim 1 , wherein the isolation structure forms the dielectric layer above the first plate.

3. The method of claim 1 , wherein the isolation structure is approximately 50 Å to 400 Å thick.

4. The method of claim 1 , wherein a height of either of the first plate and the second plate is approximately 1000 Å to 2000 Å.

5. The method of claim 1 , wherein the dielectric layer is thermally grown on the silicon island.

6. The method of claim 1 wherein the dielectric layer and the back plate insulating structure are each approximately 10 Å to 100 Å thick.

7. The method of claim 1 , further comprising:

forming a first terminal connected to the first plate and to opposing sides of the silicon island using diffusion regions formed on the silicon island; and

forming a second terminal connected to the second plate.

8. The method of claim 1 , further comprising:

forming a first terminal connected to opposing sides of the silicon island at diffusions regions; and

forming a second terminal connected to the first plate and the second plate.

9. The method of claim 1 , further comprising:

forming a first terminal connected to the silicon island;

forming a second terminal connected to the first plate;

forming a third terminal connected to the second plate; and

providing a higher potential to the first terminal than the second terminal or the third terminal.

10. The method of claim 1 , wherein the isolation structure is formed from a silicon layer which is entirely etched away between the first plate and the second plate such that the second plate is formed directly on the insulating layer and further comprising:

forming a first terminal connected to the first plate; and forming a second terminal connected to the second plate.

11. The method of claim 1 , further comprising providing capacitance directly between the first plate and the second when the silicon body between the plates is fully-depleted.

12. The method of claim 1 , further comprising:

forming an inversion layer beneath a top portion of the insulating layers when a potential of a wire shorting between diffusion regions formed on the isolation structure with respect to one diffusion region of the diffusion regions causes channel inversion; and

forming an accumulation layer beneath the top portion of the insulating layers when the potential of the wire is high with respect to the one diffusion region.

13. The method of claim 1 , further comprising:

forming at least another plate in the insulating layer;

forming at least another plate above the insulating layer corresponding to the at least another plate in the insulating layer; and

providing an isolation island and dielectric structure between the at least another plate in the insulating layer and above the insulating layer.

14. The method of claim 1 , wherein the dielectric layer is formed to expose portions of the insulating layer.

15. A method of manufacturing a dual-gate CMOS structure, comprising:

forming at least one back plate in an insulating layer such that a portion of the insulating layer provides a spacing between a top surface of the insulating layer and the at least one back plate;

while the portion of the insulating layer is arranged over the at least one back plate, forming at least one front plate above the portion of the insulating layer corresponding to the at least one back plate; and

providing a dielectric structure between the at least one back plate and the front plate,

wherein the dielectric structure is a back gate dielectric layer and a front gate dielectric layer, the front gate dielectric layer is formed between a silicon based island and the at least one front plate, and in contact with the back gate dielectric layer, and the dielectric structure surrounds the silicon based island.

16. The method of claim 15 , further comprising doping an isolation island formed in the dielectric structure to form diffusion regions.

17. The method of claim 15 , further comprising:

etching portions of the silicon layer to form isolated islands corresponding to the at least one back plate and the at least one front plate;

doping portions of the isolated islands to form diffusion regions, wherein the dielectric structure is a back gate dielectric layer provided between the back plate and the isolated islands, and a front gate dielectric formed between the isolated islands and the front plate.

18. The method of claim 15 , further comprising doping diffusion regions associated with the at least one back plate and front plate.

19. The method of claim 15 , wherein:

the dielectric is a first dielectric and a second dielectric both approximately 10 Å to 100 Å thick; and

the front plate and the back gate have a critical dimension of approximately 1000 Å to 2000 Å.

20. The method of claim 15 , wherein the front gate dielectric layer is formed to expose portions of the insulating layer.

21. The method of claim 18 , wherein the dielectric structure is a front plate dielectric and a back plate dielectric separated by diffusion regions.

22. The method of claim 21 , further comprising:

forming a first terminal connected to the back plate and opposing sides of the diffusion regions to short the diffusion regions; and

forming a second terminal connected to the front plate.

23. The method of claim 21 , further comprising:

forming a first terminal connected to the diffusions regions; and

forming a second terminal connected to the front plate and the back plate.

24. The method of claim 21 , further comprising:

forming a first terminal connected to the one diffusion region of the diffusion regions;

forming a second terminal connected to the front plate; and

forming a third terminal connected to the back plate; and

providing a higher potential to the first terminal than the second terminal or the third terminal.

25. A method of manufacturing a dual-gate CMOS structure, comprising:

forming at least one back plate in an insulating layer such that a portion of the insulating layer provides a spacing between a top surface of the insulating layer and the at least one back plate;

while the portion of the insulating layer is arranged over the at least one back plate, forming at least one front plate above the portion of the insulating layer corresponding to the at least one back plate; and

providing a dielectric structure between the at least one back plate and the front plate, wherein:

the at least one back plate is at least two back plates;

the at least one front plate is at least two front plates; and

the dielectric structure contains a first dielectric and a second dielectric

wherein the dielectric structure is a back gate dielectric layer and a front gate dielectric layer, the front gate dielectric layer is formed between a silicon based island and the at least one front plate, and in contact with the back gate dielectric layer, and the dielectric structure surrounds the silicon based island.

26. The method of claim 25 , wherein the two front gates are at least a first front gate and a second front gate, the first and second front gate being formed simultaneously in a same process.

27. The method of claim 25 , wherein the two or more front gates are a first front gate and a second front gate, the first and second front gate being formed separately.

28. A method of manufacturing a dual-gate CMOS structure, comprising:

forming a first plate buried in an insulating layer such that a portion of the insulating layer provides a spacing between a top surface of the insulating layer and the first plate;

while the portion of the insulating layer is arranged over the first plate, forming a second plate above the spacing; and

providing an isolation structure between the first plate and the second plate, wherein:

the isolation structure includes a dielectric layer surrounding a silicon island and in contact with the insulating layer, and

the insulating layer forms a back plate insulating structure between the first plate and the silicon island.

29. The method of claim 28 , wherein the method forms an ultra-thin SOI capacitor.

30. The method of claim 29 , wherein the insulating layer comprises a BOX layer.

31. The method of claim 30 , further comprising doping the isolation structure to form diffusion regions between the first plate and the second plate.

32. The method of claim 31 , further comprising:

forming a first terminal; and

forming a second terminal connected to the first plate and the second plate.