Semiconductor device and method of making a semiconductor device
A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface, a backside and side surfaces extending between the major surface and the backside. The semiconductor device also includes at least one metal layer extending across the backside of the substrate. A peripheral part of the at least one metal layer located at the edge of the substrate between the backside and at least one of the side surfaces extends towards a plane containing the major surface. This can prevent burrs located at the peripheral part of the at least one metal layer interfering with the mounting of the backside of the substrate on the surface of a carrier.
1. A semiconductor device comprising:
a semiconductor substrate having a major surface comprising an active region, a backside surface and a plurality of side surfaces extending between the major surface and the backside surface opposite the major surface; and
at least one metal layer extending across the backside surface of the semiconductor substrate, wherein at least portions of the at least one metal layer on the backside surface of the semiconductor substrate are configured to be mounted directly in contact with a surface of a carrier,
wherein the at least one metal layer has a peripheral part that is located at an edge of the semiconductor substrate between the backside surface and at least one of the plurality of side surfaces that extends towards a plane containing the major surface and wherein the peripheral part is adapted to prevent burrs located at the peripheral part of the at least one metal layer from interfering with mounting of the backside surface of the semiconductor substrate on the surface of the carrier, wherein the edge of the semiconductor substrate between the backside surface and the at least one of the plurality of side surfaces includes a substantially L-shaped step portion having a corner pointing inwards towards a bulk region of the semiconductor substrate, and wherein the peripheral part of the at least one metal layer extends along the substantially L-shaped step portion and is not abutting to the active region of the major surface,
wherein the active region comprises one or more active components located on the major surface and opposite the backside surface.
2. The semiconductor device of claim 1 , wherein the at least one metal layer comprises a stack of metal layers located on the backside surface of the semiconductor substrate.
3. A wafer level chip scale package comprising the semiconductor device of claim 1 .
4. A method of making a plurality of the semiconductor device of claim 1 , the method comprising:
providing a wafer having a wafer major surface and a wafer backside surface opposite the wafer major surface;
providing a plurality of active regions comprising the one or more active components located on or in the wafer major surface;
forming an array of trenches in the wafer backside surface;
depositing at least one wafer metal layer on the wafer backside surface, wherein the at least one wafer metal layer extends across the wafer backside surface and coats a n inner surface of each of the trenches; and
singulating the wafer to produce the plurality of the semiconductor device of claim 1 .
5. The method of claim 4 , wherein singulating the wafer comprises sawing the wafer from the wafer major surface downwards until the sawing meets the array of trenches in the wafer backside surface, wherein a sawing width is less than a width of each of the trenches.
6. The Semiconductor of claim 4 , wherein the substantially L-shaped step portion of the peripheral part of the at least one metal layer abuts the bulk region.