Electrostatic discharge device and split multi rail network with symmetrical layout design technique
A symmetrical layout technique for an electrostatic discharge ESD device and a corresponding power supply network is presented. The ESD device protects an electronic circuit against an overvoltage or overcurrent and contains a first contact area to establish an electrical contact with a first supply rail, a second contact area to establish an electrical contact with a second supply rail, and a third contact area to establish an electrical contact with a third supply rail. The first and third supply rails provide a first supply voltage, and the second supply rail provides a second supply voltage. Within the ESD device, an axis of symmetry passes through the second contact area, and the first contact area and the third contact area are arranged on opposite sides with regard to the axis of symmetry. The symmetrical layout technique allows flipping the orientation of the ESD device with regard to the supply rails.
1. An electrostatic discharge ESD device configured to protect an electronic circuit against an overvoltage or an overcurrent, the ESD device comprising
a first contact area configured to establish an electrical contact with a first supply rail,
a second contact area configured to establish an electrical contact with a second supply rail, and
a third contact area configured to establish an electrical contact with a third supply rail,
wherein
an axis of symmetry passes through the second contact area, and
the first contact area and the third contact area are arranged on opposite sides with regard to the axis of symmetry,
wherein the ESD device further comprises
a terminal for coupling the ESD device with an external I/O pad, and
a directional conducting device arranged on a path between the second contact area and said terminal.
2. The ESD device of claim 1 , wherein a distance between the first contact area and the axis of symmetry equals a distance between the third contact area and the axis of symmetry.
3. The ESD device of claim 1 , wherein the first contact area is symmetrical to the third contact area with regard to the axis of symmetry.
4. The ESD device of claim 1 , wherein the three supply rails extend along three straight, parallel lines which are parallel to the axis of symmetry of the ESD device.
5. The ESD device of claim 1 , wherein the first contact area and the third contact area are electrically connected with each other within the ESD device.
6. The ESD device of claim 1 comprising a switching unit configured to establish, in case the overvoltage or the overcurrent is detected at one or more I/O pads, an electrical connection between the first contact area and the second contact area, and to isolate the latter contact areas otherwise.
7. The ESD device of claim 1 comprising a switching unit configured to establish, in case the overvoltage or the overcurrent is detected at one or more I/O pads, an electrical connection between the third contact area and the second contact area, and to isolate the latter contact areas otherwise.
8. The ESD device of claim 1 , further comprising
a terminal for coupling the ESD device with an external I/O pad, and
a directional conducting device arranged on a path between the first contact area or the third contact area on the one hand and said terminal on the other hand.
9. The ESD device of claim 1 , wherein the electronic circuit to be protected by the ESD device is supplied with electrical power by the first, the second and the third supply rail.
10. The ESD device of claim 9 , wherein the first direction is a direction which is rotated by 180 degree with regard to the second direction.
11. The ESD device of claim 1 , wherein the first contact area, the second contact area and the third contact area are configured such that the ESD device can be placed in a first direction or in a second direction with regard to the supply rails, wherein, in the first direction, the first contact area establishes an electrical contact with the first supply rail, the second contact area establishes an electrical contact with the second supply rail, and the third contact area establishes an electrical contact with the third supply rail, and, in the second direction, the first contact area establishes an electrical contact with the third supply rail, the second contact area establishes an electrical contact with the second supply rail, and the third contact area establishes an electrical contact with the first supply rail.
12. An electrostatic discharge ESD device configured to protect an electronic circuit against an overvoltage or an overcurrent, the ESD device comprising
a first contact area configured to establish an electrical contact with a first supply rail,
a second contact area configured to establish an electrical contact with a second supply rail,
a third contact area configured to establish an electrical contact with a third supply rail, and
a fourth contact area for establishing an electrical contact with a fourth supply rail
wherein
an axis of symmetry is situated in between the second contact area and the fourth contact area, and
the first contact area and the third contact area are arranged on opposite sides with regard to the axis of symmetry,
the ESD device further comprising a fourth contact area for establishing an electrical contact with a fourth supply rail, wherein the axis of symmetry does not pass through the second contact area, but is situated in between the second contact area and the fourth contact area, and the first contact area and the third contact area are still arranged on opposite sides with regard to the axis of symmetry.
13. The ESD device of claim 12 , wherein a distance between the first contact area and the axis of symmetry equals a distance between the third contact area and the axis of symmetry, and a distance between the second contact area and the axis of symmetry equals a distance between the fourth contact area and the axis of symmetry.
14. The ESD device of claim 12 , wherein the first contact area is symmetrical to the third contact area with regard to the axis of symmetry, and the second contact area is symmetrical to the fourth contact area with regard to the axis of symmetry.
15. The ESD device of claim 14 , wherein the first contact area, the second contact area, the third contact area and the fourth contact area are arranged along an axis perpendicular to the axis of symmetry.
16. The ESD device of claim 12 , wherein the fourth contact area and the second contact area are electrically connected with each other within the ESD device.
17. The ESD device of claim 13 comprising a fifth contact area for establishing an electrical contact with a fifth supply rail, wherein the axis of symmetry passes through the fifth contact area.
18. A method for protecting an electronic circuit against an overvoltage or an overcurrent using an electrostatic discharge ESD device, the method comprising
establishing an electrical contact between a first contact area of the ESD device and a first supply rail,
establishing an electrical contact between a second contact area of the ESD device and a second supply rail, and
establishing an electrical contact between a third contact area of the ESD device and a third supply rail,
wherein an axis of symmetry passes through the second contact area, and the first contact area and the third contact area are arranged on opposite sides with regard to the axis of symmetry;
wherein the method further comprises
coupling a terminal of the ESD device with an external I/O pad, and
arranging a directional conducting device on a path between the second contact area and said terminal.
19. The method according to claim 18 , wherein a distance between the first contact area and the axis of symmetry equals a distance between the third contact area and the axis of symmetry.
20. The method of claim 18 , wherein the first contact area is symmetrical to the third contact area with regard to the axis of symmetry.
21. The method of claim 18 , wherein the three supply rails extend along three straight, parallel lines which are parallel to the axis of symmetry of the ESD device.
22. The method of claim 18 , wherein the first contact area and the third contact area are electrically connected with each other within the ESD device.
23. The method of claim 18 comprising a switching unit to establish, in case the overvoltage or the overcurrent is detected at one or more I/O pads, an electrical connection between the first contact area and the second contact area, and to isolate the latter contact areas otherwise.
24. The method of claim 18 comprising a switching unit to establish, in case the overvoltage or the overcurrent is detected at one or more I/O pads, an electrical connection between the third contact area and the second contact area, and to isolate the latter contact areas otherwise.
25. The method of claim 18 , further comprising the steps of:
coupling with a terminal the ESD device with an external I/O pad, and
arranging a directional conducting device on a path between the first contact area or the third contact area on the one hand and said terminal on the other hand.
26. The method of claim 18 , wherein the electronic circuit to be protected by the ESD device is supplied with electrical power by the first, the second and the third supply rail.
27. The method of claim 18 , wherein the first contact area, the second contact area and the third contact area are used so that the ESD device can be placed in a first direction or in a second direction with regard to the supply rails, wherein, in the first direction, the first contact area establishes an electrical contact with the first supply rail, the second contact area establishes an electrical contact with the second supply rail, and the third contact area establishes an electrical contact with the third supply rail, and, in the second direction, the first contact area establishes an electrical contact with the third supply rail, the second contact area establishes an electrical contact with the second supply rail, and the third contact area establishes an electrical contact with the first supply rail.
28. The method of claim 27 , wherein the first direction is a direction which is rotated by 180 degree with regard to the second direction.
29. A method for protecting an electronic circuit against an overvoltage or an overcurrent using an electrostatic discharge ESD device, the method comprising
establishing an electrical contact between a first contact area of the ESD device and a first supply rail,
establishing an electrical contact between a second contact area of the ESD device and a second supply rail,
establishing an electrical contact between a third contact area of the ESD device and a third supply rail, and
establishing an electrical contact between a fourth contact area of the ESD device and a fourth supply rail,
wherein
an axis of symmetry is situated in between the second contact area and the fourth contact area, and
the first contact area and the third contact area are arranged on opposite sides with regard to the axis of symmetry,
the method further comprising the step of:
establishing with a fourth contact area an electrical contact with a fourth supply rail, wherein the axis of symmetry does not pass through the second contact area, but is situated in between the second contact area and the fourth contact area, and the first contact area and the third contact area are still arranged on opposite sides with regard to the axis of symmetry.
30. The method of claim 29 , wherein a distance between the first contact area and the axis of symmetry equals a distance between the third contact area and the axis of symmetry, and a distance between the second contact area and the axis of symmetry equals a distance between the fourth contact area and the axis of symmetry.
31. The method of claim 30 comprising the step of:
establishing with a fifth contact area an electrical contact with a fifth supply rail, wherein the axis of symmetry passes through the fifth contact area.
32. The method of claim 29 , wherein the first contact area is symmetrical to the third contact area with regard to the axis of symmetry, and the second contact area is symmetrical to the fourth contact area with regard to the axis of symmetry.
33. The method of claim 32 , wherein the first contact area, the second contact area, the third contact area and the fourth contact area are arranged along an axis perpendicular to the axis of symmetry.
34. The method of claim 29 , wherein the fourth contact area and the second contact area are electrically connected with each other within the ESD device.