Contact-free photomixing probe for device and integrated circuit measurement or characterization
A device for measuring and characterizing solid-state devices or integrated circuits at RF frequencies up to 1.0 THz and beyond is provided that includes a transmitting photomixing probe structure and a receiving photomixing probe structure. The transmitting photomixing probe structure and the receiving photomixing probe structure are ac-coupled to the solid-state device or integrated circuit in a contact-free manner.
1. A device for measuring or characterizing a solid-state device or an integrated circuit at frequencies up to 1.0 THz and beyond comprising:
a transmitting photomixing probe; and
a receiving photomixing probe;
wherein each of the transmitting photomixing probe and the receiving photomixing probe comprise a photomixer and optical fibers, and
wherein the transmitting photomixing probe and the receiving photomixing probe are ac-coupled to the solid-state device or the integrated circuit via an electromagnetic field, and are not in physical contact with the solid-state device or the integrated circuit.
2. The device of claim 1 , wherein each of the transmitting photomixing probe and the receiving photomixing probe comprise two optical fibers directly coupling the photomixer to two lasers that are external to the photomixing probe.
3. The device of claim 2 , wherein the lasers have a mutually coherent but tunable frequency difference.
4. The device of claim 2 , wherein the lasers are both single frequency diode lasers.
5. The device of claim 1 , wherein the transmitting photomixing probe and the receiving photomixing probe each comprise a high resistivity substrate and a metalized surface.
6. The device of claim 5 , wherein the substrate is selected from the group consisting of silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), or a combination of two or more thereof.
7. The device of claim 1 wherein the solid-state device or the integrated circuit is embedded in a planar transmission line, and wherein an output from the solid-state device or integrated circuit is sampled in the planar transmission line.
8. The device of claim 7 , wherein the distance (D 1 ) between the transmitting photomixing probe and the planar transmission line and the distance (D 2 ) between the receiving photomixing probe is in the range of about 1 micron to about 100 microns.
9. The device of claim 8 , wherein D 1 and D 2 are each in the range of about 1 micron to about 10 microns.
10. The device of claim 7 , wherein neither the transmitting photomixing probe nor the receiving photomixing probe come into electrical contact with the planar transmission line.
11. The device of claim 7 , wherein the planar transmission line is selected from the group consisting of a coplanar waveguide, a slot-line, a microstrip, or a twin line.
12. The device of claim 1 , wherein the transmitting photomixing probe and the receiving photomixing probe have a fork-like configuration or an orthorhombic configuration.
13. The device of claim 1 , wherein the each of the transmitting photomixing probe and the receiving photomixing probe further comprise a circuit end that is closer to the solid-state state device or the integrated circuit and a dielectric waveguide structure at the circuit end.
14. A method of measuring a solid-state device or an integrated circuit at an RF frequency of up to 1.0 THz and beyond comprising:
providing a transmitting photomixing probe and a receiving photomixing probe; wherein each of the transmitting photomixing probe and the receiving photomixing probe comprise a photomixer and optical fibers,
embedding the solid-state device or the integrated circuit in a planar transmission line; and
ac-coupling the transmitting photomixing probe and the receiving photomixing probe to the solid-state device or the integrated circuit via an electromagnetic field, such that neither the transmitting photomixing probe nor the receiving photomixing probe are in physical contact with the solid-state device or the integrated circuit.
15. The method of claim 14 , further comprising sampling an output from the solid-state device or integrated circuit in the planar transmission line.
16. The method of claim 14 , wherein the ac-coupling occurs by interacting a polarization current in at least one of the transmitting photomixing probe or the receiving photomixing probe and a fringing field just above the solid-state device of the integrated circuit.
17. The method of claim 16 , further comprising transforming the polarization current to a conduction current in the at least one of the transmitting photomixing probe or the receiving photomixing probe, and wherein once the polarization current is transformed to the conduction current, generating an electromagnetic field, and measuring the strength of the electromagnetic field with the receiving photomixing probe.
18. The method of claim 16 , further comprising transforming a conduction current to a polarization current in at least one of the transmitting photomixing probe or the receiving photomixing probe; generating an electromagnetic field; and measuring the strength of the electromagnetic field.
19. The method of claim 14 further comprising modulating at least one of the transmitting photomixing probe or the receiving photomixing probe via amplitude modulation or frequency modulation.
20. The method of claim 19 , wherein the signal from the transmitting photomixing probe is modulated via amplitude modulation or frequency modulation.