Vehicle, display device and manufacturing method for a semiconductor device
To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
1. A method for manufacturing a semiconductor device comprising a transistor, the transistor comprising a semiconductor layer, a source electrode, and a drain electrode, the method comprising:
forming a separation layer over a substrate;
forming a peeled layer comprising the transistor over the separation layer; and
irradiating the separation layer with a laser light to separate the peeled layer from the substrate,
wherein the peeled layer is capable of curving in a first direction,
wherein a scan direction of the laser light and a direction of a channel length of the transistor which is a direction from one of the source electrode and the drain electrode to the other of the source electrode and the drain electrode are each a second direction, and
wherein the first direction is perpendicular to the second direction.
2. The method according to claim 1 , wherein the separation layer is formed of an amorphous silicon or a polysilicon.
3. The method according to claim 1 , wherein the separation layer is formed by a sputtering method or a plasma CVD method so as to put a large amount of hydrogen into the separation layer.
4. The method according to claim 1 , wherein the substrate is a glass substrate or a quartz substrate.
5. The method according to claim 1 , wherein elements included in the peeled layer are formed at 410° C. or below.
6. The method according to claim 1 , wherein a shape of the laser light is linear or rectangular.
7. The method according to claim 1 , wherein the laser light is irradiated to a back surface of the separation layer through the substrate.
8. A method for manufacturing a semiconductor device comprising a transistor, the transistor comprising a semiconductor layer, a source electrode, and a drain electrode, the method comprising:
forming a separation layer over a substrate;
forming a peeled layer comprising the transistor over the separation layer;
irradiating the separation layer with a laser light to separate the peeled layer from the substrate; and
transferring the peeled layer to an object,
wherein the peeled layer is capable of curving in a first direction,
wherein a scan direction of the laser light and a direction of a channel length of the transistor which is a direction from one of the source electrode and the drain electrode to the other of the source electrode and the drain electrode are each a second direction, and
wherein the first direction is perpendicular to the second direction.
9. The method according to claim 8 , wherein the separation layer is formed of an amorphous silicon or a polysilicon.
10. The method according to claim 8 , wherein the separation layer is formed by a sputtering method or a plasma CVD method so as to put a large amount of hydrogen into the separation layer.
11. The method according to claim 8 , wherein the substrate is a glass substrate or a quartz substrate.
12. The method according to claim 8 , wherein elements included in the peeled layer are formed at 410° C. or below.
13. The method according to claim 8 , wherein a shape of the laser light is linear or rectangular.
14. The method according to claim 8 , wherein the laser light is irradiated to a back surface of the separation layer through the substrate.
15. The method according to claim 8 , wherein the object has a curved surface.