Image sensors and methods of forming image sensors

1. An image sensor comprising:

a semiconductor substrate comprising a photoelectric transducer;

a color filter layer on the semiconductor substrate;

a metal structure on the semiconductor substrate and adjacent a sidewall of the color filter layer;

an insulating layer on the color filter layer; and

a transparent electrode layer on a first surface of the insulating layer, in an opening of a second surface of the insulating layer that is opposite the first surface and closer than the first surface to the semiconductor substrate, and connected to the metal structure through the opening of the insulating layer.

2. The image sensor of claim 1 , further comprising a transparent layer on the color filter layer,

wherein the insulating layer is between respective portions of the transparent layer and the transparent electrode layer, and

wherein the opening of the insulating layer is free of the metal structure.

3. The image sensor of claim 2 ,

wherein the respective portion of the transparent layer comprises a first portion, and

wherein the transparent electrode layer contacts a second portion of the transparent layer through the opening of the insulating layer.

4. The image sensor of claim 1 , further comprising an organic photoelectric layer on the transparent electrode layer, wherein the insulating layer comprises a protruding portion thereof that protrudes toward the organic photoelectric layer.

5. The image sensor of claim 4 ,

wherein the second surface of the insulating layer comprises a lowermost surface of the insulating layer, and

wherein the protruding portion of the insulating layer:

comprises an uppermost, third surface of the insulating layer that is coplanar with an uppermost surface of the transparent electrode layer; and

overlaps the color filter layer.

6. The image sensor of claim 1 , wherein the metal structure comprises:

a tungsten portion; and

an aluminum portion on the tungsten portion, wherein the transparent electrode layer contacts the aluminum portion.

7. The image sensor of claim 6 , wherein sidewalls of the aluminum portion of the metal structure are tapered toward the transparent electrode layer.

8. The image sensor of claim 1 , wherein the metal structure comprises tungsten that contacts the transparent electrode layer.

9. The image sensor of claim 1 ,

wherein the insulating layer overlaps at least one sidewall of the metal structure, and

wherein a first width of the metal structure is wider than a second width of the opening through which the transparent electrode layer connects to the metal structure.

10. The image sensor of claim 1 , further comprising a metal contact in the semiconductor substrate, wherein:

the metal structure contacts the metal contact;

the metal structure comprises different first and second metallic materials;

the first metallic material contacts the metal contact; and

the second metallic material:

is between the first metallic material and the transparent electrode layer; and

is wider than the first metallic material.

11. The image sensor of claim 10 ,

wherein the second metallic material is on opposing first and second sidewalls of the first metallic material, and

wherein the metal contact and/or the metal structure comprises a tapered width.

12. The image sensor of claim 1 , wherein:

the color filter layer and the photoelectric transducer comprise a first color filter layer and a first photoelectric transducer, respectively;

the image sensor further comprises a second color filter layer on a second photoelectric transducer;

the metal structure is between the first and second color filter layers; and

the image sensor further comprises a transparent organic layer between the first color filter layer and a first portion of the insulating layer and between the second color filter layer and a second portion of the insulating layer.

13. The image sensor of claim 12 , wherein a surface of the transparent organic layer is coplanar with a surface of the metal structure that contacts the transparent electrode layer.

14. The image sensor of claim 12 , further comprising an organic photoelectric layer on the transparent electrode layer, wherein the second portion of the insulating layer comprises a protruding portion thereof that protrudes toward the organic photoelectric layer and isolates a first portion of the transparent electrode layer that is on the first color filter layer from a second portion of the transparent electrode layer that is on the second color filter layer.

15. The image sensor of claim 12 , wherein the transparent electrode layer contacts a portion of the transparent organic layer through the opening of the insulating layer.

16. The image sensor of claim 1 , wherein the insulating layer overlaps opposing first and second sidewalls of the metal structure.

17. An image sensor comprising:

a color filter layer;

a metal structure adjacent a sidewall of the color filter layer;

a transparent layer on the color filter layer;

an insulating layer on the transparent layer, wherein the transparent layer is between the color filter layer and the insulating layer, and wherein the insulating layer overlaps at least one sidewall of the metal structure; and

an electrode layer on the insulating layer, wherein the insulating layer is between respective portions of the transparent layer and the electrode layer.

18. The image sensor of claim 17 , wherein:

a surface of the transparent layer facing the insulating layer is coplanar with a surface of the metal structure;

the image sensor further comprises an organic photoelectric layer on the electrode layer;

the electrode layer is connected to the metal structure through an opening of the insulating layer; and

a first width of the metal structure is wider than a second width of the opening through which the electrode layer connects to the metal structure.

19. An image sensor comprising:

first and second color filter layers;

a metal structure between respective sidewalls of the first and second color filter layers;

an insulating layer on the first and second color filter layers;

an electrode layer on the insulating layer; and

an organic photoelectric layer on the electrode layer,

wherein the insulating layer comprises a base portion and a protruding portion that protrudes from the base portion toward the organic photoelectric layer,

wherein the electrode layer is connected to the metal structure through an opening of the base portion of the insulating layer, and

wherein the electrode layer is on:

a sidewall of the base portion of the insulating layer; and

a sidewall of the protruding portion of the insulating layer.

20. The image sensor of claim 19 , wherein:

the image sensor further comprises a transparent organic layer between the first color filter layer and the insulating layer and between the second color filter layer and the insulating layer;

the insulating layer is on a portion of the metal structure;

the protruding portion of the insulating layer isolates a first portion of the electrode layer that is on the first color filter layer from a second portion of the electrode layer that is on the second color filter layer;

a first width of the metal structure is wider than a second width of the opening through which the electrode layer connects to the metal structure; and

a continuous portion of the electrode layer contacts:

the organic photoelectric layer;

the sidewall of the protruding portion of the insulating layer; and

the metal structure.