Semiconductor device and method for manufacturing semiconductor device
A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.
1. A display device comprising:
a substrate;
a pixel portion;
a transistor in the pixel portion and on the substrate, the transistor comprising:
a gate electrode on the substrate;
a gate insulating film comprising a first oxide insulating film over the gate electrode;
an oxide semiconductor film on the gate insulating film and in contact with the first oxide insulating film;
a source electrode and a drain electrode on the oxide semiconductor film;
a second oxide insulating film on and in contact with the source electrode, the drain electrode, and the oxide semiconductor film; and
a nitride insulating film over the second oxide insulating film;
an interlayer insulating film formed from an organic material over the nitride insulating film; and
an electrode over the interlayer insulating film and electrically connected to the drain electrode through an opening formed in the interlayer insulating film,
wherein side end surfaces of the source electrode and the drain electrode form steps,
wherein portions of the second oxide insulating film covering the steps comprise void portions, and
wherein the nitride insulating film covers the void portions of the second oxide insulating film.
2. A display device comprising:
a substrate;
a pixel portion;
a transistor in the pixel portion and on the substrate, the transistor comprising:
a gate electrode on the substrate;
a gate insulating film comprising a first oxide insulating film over the gate electrode, the first oxide insulating film being a first silicon oxide film;
an oxide semiconductor film on the gate insulating film and in contact with the first oxide insulating film;
a source electrode and a drain electrode on the oxide semiconductor film;
a second oxide insulating film on and in contact with the source electrode, the drain electrode, and the oxide semiconductor film, the second oxide insulating film being a second silicon oxide film; and
a silicon nitride film over the second oxide insulating film;
an interlayer insulating film formed from an organic material over the silicon nitride film; and
an electrode over the interlayer insulating film and electrically connected to the drain electrode through an opening formed in the interlayer insulating film,
wherein side end surfaces of the source electrode and the drain electrode form steps,
wherein portions of the second oxide insulating film covering the steps comprise void portions, and
wherein the silicon nitride film covers the void portions of the second oxide insulating film.
3. A display device comprising:
a substrate;
a pixel portion;
a transistor in the pixel portion and on the substrate, the transistor comprising:
a gate electrode on the substrate;
a gate insulating film comprising a first oxide insulating film over the gate electrode, the first oxide insulating film being a first silicon oxide film;
an oxide semiconductor film on the gate insulating film and in contact with the first oxide insulating film;
a source electrode and a drain electrode on the oxide semiconductor film;
a second oxide insulating film on and in contact with the source electrode, the drain electrode, and the oxide semiconductor film, the second oxide insulating film being a second silicon oxide film; and
a first silicon nitride film over the second oxide insulating film;
an interlayer insulating film formed from an organic material over the first silicon nitride film; and
a liquid crystal element on the interlayer insulating film, the liquid crystal element comprising:
a first electrode electrically connected to the drain electrode through an opening formed in the interlayer insulating film;
a second electrode;
a second silicon nitride film between the first electrode and the second electrode; and
a liquid crystal layer over the first electrode, the second electrode, and the second silicon nitride film,
wherein side end surfaces of the source electrode and the drain electrode form steps,
wherein portions of the second oxide insulating film covering the steps comprise void portions, and
wherein the first silicon nitride film covers the void portions of the second oxide insulating film.
4. The display device according to claim 1 ,
wherein the second oxide insulating film has a thickness larger than the nitride insulating film.
5. The display device according to claim 2 ,
wherein the second oxide insulating film has a thickness larger than the silicon nitride film.
6. The display device according to claim 3 ,
wherein the second oxide insulating film has a thickness larger than the first silicon nitride film.
7. The display device according to claim 1 ,
wherein the second oxide insulating film comprises a stack of layers.
8. The display device according to claim 2 ,
wherein the second oxide insulating film comprises a stack of layers.
9. The display device according to claim 3 ,
wherein the second oxide insulating film comprises a stack of layers.
10. The display device according to claim 1 ,
wherein the second oxide insulating film has a density higher than or equal to 2.26 g/cm 3 and lower than or equal to 2.50 g/cm 3 .
11. The display device according to claim 2 ,
wherein the second oxide insulating film has a density higher than or equal to 2.26 g/cm 3 and lower than or equal to 2.50 g/cm 3 .
12. The display device according to claim 3 ,
wherein the second oxide insulating film has a density higher than or equal to 2.26 g/cm 3 and lower than or equal to 2.50 g/cm 3 .
13. The display device according to claim 1 ,
wherein the void portions are due to the steps of the side end surfaces of the source electrode and the drain electrode.
14. The display device according to claim 2 ,
wherein the void portions are due to the steps of the side end surfaces of the source electrode and the drain electrode.
15. The display device according to claim 3 ,
wherein the void portions are due to the steps of the side end surfaces of the source electrode and the drain electrode.
16. The display device according to claim 1 , further comprising a flexible printed circuit electrically connected to the pixel portion.
17. The display device according to claim 2 , further comprising a flexible printed circuit electrically connected to the pixel portion.
18. The display device according claim 3 , further comprising a flexible printed circuit electrically connected to the pixel portion.