Method and structure for forming FinFET CMOS with dual doped STI regions
View Patent ↗A method of making a semiconductor device includes forming a first fin of a first transistor in a substrate; forming a second fin of a second transistor in the substrate; disposing a first doped oxide layer including a first dopant onto the first fin and the second fin, the first dopant being an n-type dopant or a p-type dopant; disposing a mask over the first fin and removing the first doped oxide layer from the second fin; removing the mask and disposing a second doped oxide layer onto the first doped oxide layer over the first doped oxide layer covering the first fin and directly onto the second fin, the second doped oxide layer including an n-type dopant or a p-type dopant that is different than the first dopant; and annealing to drive in the first dopant into a portion of the first fin and the second dopant into a portion of the second fin.
1. A semiconductor device, comprising:
a fin patterned on a substrate, the fin having a top surface, a first sidewall, and a second sidewall;
a bilayer spacer arranged on the first sidewall of the fin, the bilayer spacer comprising a first doped oxide layer comprising a first dopant and a second doped oxide layer comprising a second dopant, the first dopant being different than the second dopant;
a single layer spacer arranged on the second sidewall of the fin, the single layer spacer comprising only the first doped oxide layer; and
a doped region arranged within the substrate beneath the fin.
2. The semiconductor device of claim 1 , wherein the first doped oxide layer is a p-doped oxide.
3. The semiconductor device of claim 2 , wherein the second doped oxide layer is an n-doped oxide.
4. The semiconductor device of claim 1 , wherein the fin further comprises a hard mask cap.
5. The semiconductor device of claim 4 , wherein the fin further comprises a sidewall spacer arranged on the bilayer spacer.
6. The semiconductor device of claim 4 , wherein the fin further comprises a sidewall spacer arranged on the single layer spacer.
7. The semiconductor device of claim 1 , wherein the first doped oxide layer has a thickness in a range from about 3 to about 30 nanometers (nm).
8. The semiconductor device of claim 1 , wherein a total thickness of the bilayer spacer and the single layer spacer are substantially the same.
9. The semiconductor device of claim 1 , further comprising a second fin arranged adjacent the fin, the second fin comprising a single layer spacer arranged on sidewalls of the second fin.
10. The semiconductor device of claim 1 , wherein the doped region of the substrate comprises a dopant that is the same as the first dopant.
11. The semiconductor device of claim 1 , further comprising an undoped oxide between the fin and the second fin.
12. The semiconductor device of claim 1 , wherein the first dopant is boron.
13. The semiconductor device of claim 1 , wherein a thickness of first doped oxide layer is in a range from about 3 to about 30 nm.
14. The semiconductor device of claim 1 , wherein the second dopant is arsenic.
15. The semiconductor device of claim 1 , wherein the second dopant is phosphorus.
16. The semiconductor device of claim 1 , wherein the fin further comprises a doped fin region.
17. The semiconductor device of claim 16 , wherein the doped fin region comprises the first dopant.
18. The semiconductor device of claim 17 , wherein the fin further sidewalls spacer arranged over the bilayer spacer and the single layer spacer.
19. The semiconductor device of claim 17 , wherein the doped fin region is confined to a region of the fin between the bilayer spacer and the single layer spacer.
20. A semiconductor device, comprising:
a fin patterned on a substrate, the fin having a top surface, a first sidewall, and a second sidewall;
a bilayer spacer arranged on the first sidewall of the fin, the bilayer spacer comprising a first doped oxide comprising a first dopant disposed directly on the first sidewall of the fin and a second doped oxide layer comprising a second dopant disposed directly on the first doped oxide, the first dopant being different than the second dopant;
a single layer spacer arranged directly on the second sidewall of the fin, the single layer spacer also comprising same material as the first doped oxide layer, the single layer spacer being thicker than the first doped oxide layer of the bilayer spacer; and
a doped region arranged within the substrate beneath the fin.