Semiconductor component and fabricating method thereof

1. A semiconductor component, comprising:

a substrate having a first zone and a second zone;

at least one first FinFET device disposed on the first zone and including a fin and an epitaxy source/drain region on the fin;

at least one second FinFET device disposed on the second zone and including a first fin and an epitaxy source/drain region on the first fin;

an isolation structure at least partially between the fin of the first FinFET device and the first fin of the second FinFET device; and

an insulating layer conformably on a sidewall of the epitaxy source/drain region of the first FinFET device, wherein a sidewall of the epitaxy source/drain region of the second FinFET device is free from coverage by the insulating layer, a top surface of the insulating layer is lower than a top surface of the epitaxy source/drain region, and a bottom of the insulating layer is higher than a top of the isolation structure.

2. The semiconductor component of claim 1 , wherein the width of the epitaxy source/drain region of the second FinFET device is at least two times wider than the width of the epitaxy source/drain region of the first FinFET device.

3. The semiconductor component of claim 1 , wherein the epitaxy source/drain region of the first FinFET device is a fin structure.

4. The semiconductor component of claim 1 , wherein the second FinFET device comprises a second fin, and the epitaxy source/drain region of the second FinFET device is a dome structure and bridges the first fin and the second fin.

5. The semiconductor component of claim 1 , wherein the fin of the first FinFET device has a concave top surface, and the epitaxy source/drain region of the first FinFET device is disposed on the concave top of the fin of the first FinFET device.

6. The semiconductor component of claim 1 , wherein a conductive type of the epitaxy source/drain region of the first FinFET device is the same as a conductive type of the epitaxy source/drain region of the second FinFET device.

7. The semiconductor component of claim 1 , wherein a conductive type of the epitaxy source/drain region of the first FinFET device is different from a conductive type of the epitaxy source drain region of the second FinFET device.

8. A semiconductor component, comprising:

a substrate having a first zone and a second zone;

a plurality of fins disposed on the substrate;

at least two first epitaxy structures disposed on adjacent two of the fins, wherein the first epitaxy structures are in the first zone and are isolated from each other;

an insulating layer having a first portion conformally extending along a sidewall of one of the first epitaxy structures, a second portion conformally extending along a sidewall of another of the first epitaxy structures, and a third portion interconnecting the first portion and the second portion, wherein a bottommost portion of the third portion of the insulating layer is higher than a bottommost portion of the first epitaxy structures; and

at least two second epitaxy structures disposed on other adjacent two of the fins, wherein the second epitaxy structures are in the second zone and are merged.

9. The semiconductor component of claim 8 , wherein the first epitaxy structures are fin-shaped.

10. The semiconductor component of claim 8 , wherein a width of each of the first epitaxy structures is smaller than a width of each of the second epitaxy structures.

11. The semiconductor component of claim 8 , wherein the insulating layer is a silicon oxycarbonitride (SiOCN) film.

12. The semiconductor component of claim 8 , further comprising:

a plurality of contacts respectively connected to the first epitaxy structures, wherein an interface between each of the contacts and each of the first epitaxy structures comprises at least one curved section.

13. The semiconductor component of claim 8 , further comprising:

a contact connected to the first epitaxy structures, wherein an interface between the contacts and the first epitaxy structures comprises a plurality of curved sections.

14. The semiconductor component of claim 8 , further comprising:

an isolation structure between said two of the fins, wherein the third portion of the insulating layer conformally extends along a top surface of the isolation structure.

15. A semiconductor component, comprising:

a substrate;

a plurality of fins disposed on the substrate;

an isolation structure surrounding the fins;

first and second epitaxy structures disposed on the fins, wherein the first and second epitaxy structures are isolated from each other;

an insulating layer having a first portion conformally extending along a first portion of a top surface of the isolation structure and a second portion conformally extending along a sidewall of the first epitaxy structure, wherein the first portion of the insulating layer terminates prior to reaching a second portion of the top surface of the isolation structure, such that the second portion of the top surface of the isolation structure and a sidewall of the second epitaxy structure are free from coverage by the insulating layer; and

a contact disposed on the first epitaxy structure, wherein the first epitaxy structure is partially embedded in the contact.

16. The semiconductor component of claim 15 , wherein an interface between the contact and the first epitaxy structure comprises a curved section.

17. The semiconductor component of claim 15 , wherein the first epitaxy structure is fin-shaped.

18. The semiconductor component of claim 15 , further comprising a dielectric layer disposed between the insulating layer and the contact.

19. The semiconductor component of claim 15 , wherein the first epitaxy structure has a bottom portion surrounded by the insulating layer and a top portion over the insulating layer, and the top portion of the first epitaxy structure is in contact with the contact.

20. The semiconductor component of claim 19 , wherein a width of the top portion of the first epitaxy structure is greater than a width of the bottom portion of the first epitaxy structure.