Fully molded miniaturized semiconductor module
A semiconductor module can comprise a fully molded base portion comprising a planar surface that further comprises a semiconductor die comprising contact pads, conductive pillars coupled to the contact pads and extending to the planar surface, and an encapsulant material disposed over the active surface, four side surfaces, and around the conductive pillars, wherein ends of the conductive pillars are exposed from the encapsulant material at the planar surface of the fully molded base portion. A build-up interconnect structure comprising a routing layer can be disposed over the fully molded base portion. A photo-imageable solder mask material can be disposed over the routing layer and comprise openings to form surface mount device (SMD) land pads electrically coupled to the semiconductor die and the conductive pillars. A SMD component can be electrically coupled to the SMD land pads with surface mount technology (SMT).
1. A semiconductor module, comprising:
a fully molded base portion comprising:
a planar surface;
a semiconductor die disposed within the fully molded base portion, the semiconductor die comprising an active surface comprising contact pads,
conductive pillars coupled to the contact pads of the semiconductor die, the conductive pillars extending to the planar surface, and
an encapsulant material disposed over the active surface, four side surfaces, and around the conductive pillars, wherein ends of the conductive pillars are exposed from the encapsulant material at the planar surface of the fully molded base portion;
a build-up interconnect structure comprising a routing layer disposed over, and contained within, a footprint of the fully molded base portion;
a photo-imageable solder mask material disposed over the routing layer and comprising openings to form surface mount device (SMD) land pads electrically coupled to the semiconductor die and the conductive pillars; and
a SMD component electrically coupled to the SMD land pads with surface mount technology (SMT).
2. The semiconductor module of claim 1 , wherein the photo-imageable solder mask comprises at least one of epoxy solder resist, polyimide, PBO, and silicone.
3. The semiconductor module of claim 1 , wherein the SMD component being electrically coupled to the SMD land pads further comprises:
the SMD component comprising solderable terminations;
solder paste disposed over the SMD land pads; and
the solderable terminations being disposed over, and electrically coupled to, the SMD land pads while the solderable terminations are in contact with the solder paste.
4. The semiconductor module of claim 3 , wherein SMD land pads comprise a solderable surface finish of: nickel (Ni) and gold (Au); Ni, palladium (Pd) and Au; tin (Sn); solder; or Organic Solderability Preservative (OSP).
5. The semiconductor module of claim 1 , wherein the SMD component is coupled to the land pads with solder bumps.
6. The semiconductor module of claim 1 , wherein the build-up interconnect structure comprises high-density multilayer routing layers.
7. The semiconductor module of claim 1 , wherein:
the SMD component is partially within a footprint of the semiconductor die and partially without a footprint of the semiconductor die; and
at least one of the SMD land pads is positioned over an edge of the footprint of the semiconductor die within the fully molded structure.
8. The semiconductor module of claim 1 , further comprising:
a first output connector of the module adapted to be coupled to a battery; and
a second connector of the module adapted to be coupled to a display.
9. The semiconductor module of claim 1 , further comprising the semiconductor die in the fully molded base portion being fully testable before any SMD component is coupled to the SMD land pads.
10. A semiconductor module, comprising:
a fully molded base portion comprising:
a planar surface;
a semiconductor die disposed within the fully molded base portion, the semiconductor die comprising contact pads,
conductive pillars coupled to the contact pads and extending to the planar surface, and
an encapsulant material disposed over the active surface, four side surfaces, and around the conductive pillars, wherein ends of the conductive pillars are exposed from the encapsulant material at the planar surface of the fully molded base portion;
a build-up interconnect structure comprising a routing layer contained within a footprint of the fully molded base portion; and
a SMD component electrically coupled to the routing layer.
11. The semiconductor module of claim 10 , wherein the SMD component being electrically coupled to the routing layer further comprises:
the SMD component comprising solderable terminations;
solder paste disposed over the routing layer; and
the solderable terminations being disposed over, and electrically coupled to, the routing layer when the solderable terminations are in contact with the solder paste.
12. The semiconductor module of claim 10 , wherein the SMD component is coupled to the routing layer with solder bumps.
13. The semiconductor module of claim 10 , wherein:
the SMD component is partially within a footprint of the semiconductor die and partially without a footprint of the semiconductor die.
14. The semiconductor module of claim 10 , further comprising:
a first output connector of the module adapted to be coupled to a battery; and
a second connector of the module adapted to be coupled to a display.
15. The semiconductor module of claim 10 , further comprising the semiconductor die in the fully molded base portion being fully testable before any SMD component is coupled to the SMD land pads.
16. A method of making a semiconductor module, comprising:
forming electrical interconnects on a semiconductor die;
encapsulating the semiconductor die with an encapsulant to form a first embedded portion with the electrical interconnects exposed from the encapsulant;
forming a build-up interconnect structure comprising a conductive RDL layer over the first embedded portion after encapsulating the semiconductor die, the build-up interconnect structure being electrically connected to the electrical interconnects;
forming surface mount device (SMD) land pads electrically coupled to the conductive RDL layer; and
coupling a SMD component to the SMD land pads with surface mount technology (SMT) to provide an electrical connection between the SMD component and the semiconductor die through the conductive pillars and the build-up interconnect structure.
17. The method of claim 16 further comprising forming the SMD land pads by:
disposing a photo-imageable solder mask material over the conductive RDL layer;
forming openings in the photo-imageable solder mask material over the conductive RDL layer; and
applying a solderable surface finish of nickel (Ni) and gold (Au); Ni, palladium (Pd) and Au; tin (Sn); solder; or Organic Solderability Preservative (OSP) over the SMD land pads.
18. The method of claim 16 , wherein coupling the SMD component to the SMD land pads further comprises:
screen printing solder paste over each of the SMD land pads;
placing solderable terminations of the SMD components over the first embedded portion such that solderable terminations contact the solder paste over the SMD land pads; and
reflowing the solder paste to couple the SMD components to the SMD land pads.
19. The method of claim 16 , further comprising electrically testing the semiconductor die within the first embedded portion before coupling any of the SMD components to the first embedded portion.
20. The method of claim 16 , further comprising coupling the SMD component to the SMD land pads so that the SMD component is partially within a footprint of the semiconductor die and partially without a footprint of the semiconductor die.