Purification of carbon nanotubes via selective heating
The present invention provides methods for purifying a layer of carbon nanotubes comprising providing a precursor layer of substantially aligned carbon nanotubes supported by a substrate, wherein the precursor layer comprises a mixture of first carbon nanotubes and second carbon nanotubes; selectively heating the first carbon nanotubes; and separating the first carbon nanotubes from the second carbon nanotubes, thereby generating a purified layer of carbon nanotubes. Devices benefiting from enhanced electrical properties enabled by the purified layer of carbon nanotubes are also described.
1. A method for purifying a layer of carbon nanotubes comprising:
providing a precursor layer of substantially aligned carbon nanotubes supported by a substrate, wherein said precursor layer comprises a mixture of metallic carbon nanotubes and semiconducting carbon nanotubes;
covering said precursor layer of carbon nanotubes with a thermocapillary resist, wherein said thermocapillary resist is in thermal contact with at least a portion of said carbon nanotubes; and
applying an electric current to said metallic carbon nanotubes, thereby selectively heating said metallic carbon nanotubes to separate said metallic carbon nanotubes from said semiconducting carbon nanotubes, thereby providing a purified layer of carbon nanotubes comprising at least 50% of said metallic or said semiconducting carbon nanotubes.
2. The method claim 1 , wherein said selective heating results from electronic resistance.
3. The method of claim 1 , wherein said carbon nanotubes are single-walled carbon nanotubes (SWNTs).
4. The method of claim 1 , wherein said carbon nanotubes are multi-walled carbon nanotubes (MWNTs).
5. The method of claim 1 , wherein said semiconducting carbon nanotubes do not absorb sufficient energy to overcome the Schottky barrier of said semiconducting carbon nanotubes.
6. The method of claim 1 , wherein electric current is an alternating or direct current selected from a range of 0.01 mA to 100 mA.
7. The method of claim 1 , wherein said metallic carbon nanotubes and said semiconducting nanotubes of said precursor layer are in electrical contact with a first electrode and a second electrode.
8. The method of claim 7 , wherein said step of applying said electric current is performed by applying an electrode bias voltage between said first electrode and said second electrode selected from the range of 0.01 V to 100 V.
9. The method of claim 7 , wherein said first and second electrodes are interdigitated.
10. The method of claim 1 , wherein said thermocapillary resist comprises a molecular organic species.
11. The method of claim 1 , wherein said thermocapillary resist is selected from the group consisting of α,α,α′-Tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene, polymethylmethacrylate (PMMA), polystyrene (PS), poly(styrene-dimethylsiloxane) (PS-PDMS); oligosaccharide-trimethylsilylstyrene, and polyhedral oligomeric silsesquioxane (POSS).
12. The method of claim 1 , wherein said thermocapillary resist has a room temperature viscosity selected from a range of 0.5 Pa·s to 100 Pas.
13. The method of claim 1 , wherein said layer of substantially aligned carbon nanotubes comprises at least 90% semiconducting carbon nanotubes.