IP Library › Granted Patent US 10,205,432
Granted Patent B2
US 10,205,432 · App. 15/356,197 · Granted Feb 12, 2019

Piezoelectric thin film resonator, filter, and duplexer

Inventors: Tsuyoshi Yokoyama (Tokyo, JP); Jiansong Liu (Tokyo, JP)
Assignee: TAIYO YUDEN CO., LTD.
H03H9/02157H03H9/13H03H9/173H03H9/175H03H9/587H03H9/589H03H9/605H03H9/706H03H9/02118
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Quick Facts
Patent No.
US 10,205,432
App. No.
15/356,197
Granted
Feb 12, 2019
Kind
B2
Abstract

A piezoelectric thin film resonator includes: a piezoelectric film located on a substrate, and formed of stacked lower and upper piezoelectric films; lower and upper electrodes facing each other across at least a part of the piezoelectric film; and an insertion film inserted between the lower and upper piezoelectric films, wherein an air gap including a resonance region where the lower and upper electrodes face each other across the piezoelectric film and being larger than the resonance region is located under the lower electrode, and a multilayered film formed of the lower piezoelectric film, the insertion film, and the upper piezoelectric film is located in at least a part of a region located further out than an outer outline of the resonance region, further in than an outer outline of the air gap, and surrounding the resonance region, and is not located in a center region of the resonance region.

Claims (42)

1. A piezoelectric thin film resonator comprising:

a substrate;

a piezoelectric film that is located on the substrate, and is formed of a lower piezoelectric film and an upper piezoelectric film that are stacked;

a lower electrode and an upper electrode that face each other across at least a part of the piezoelectric film; and

an insertion film that is inserted between the lower piezoelectric film and the upper piezoelectric film,

wherein an air gap or an acoustic mirror that includes a resonance region defined by a region where the lower electrode and the upper electrode face each other across the piezoelectric film and that is larger than the resonance region in plan view is located under the lower electrode, and

a multilayered film formed of the lower piezoelectric film, the insertion film, and the upper piezoelectric film that are stacked is located in at least a part of a region that is located further out than an outer outline of the resonance region, further in than an outer outline of the air gap or an outer outline of the acoustic mirror, and surrounds the resonance region, and

the multilayered film is not located in the resonance region.

2. The piezoelectric thin film resonator according to claim 1 , wherein

in at least a part of the region surrounding the resonance region, an inner outline of the multilayered film substantially coincides with the outer outline of the resonance region.

3. The piezoelectric thin film resonator according to claim 1 , wherein

in at least a part of the region surrounding the resonance region, an inner outline of the multilayered film is located further out than the outer outline of the resonance region.

4. The piezoelectric thin film resonator according to claim 1 , wherein

in at least a part of the region surrounding the resonance region, an outer outline of the multilayered film is located further out than the outer outline of the air gap or the outer outline of the acoustic mirror.

5. The piezoelectric thin film resonator according to claim 1 , wherein

in at least a part of the region surrounding the resonance region, the piezoelectric film outside the air gap or the acoustic mirror is removed.

6. The piezoelectric thin film resonator according to claim 1 , wherein

the insertion film has an acoustic impedance less than an acoustic impedance of the piezoelectric film.

7. The piezoelectric thin film resonator according to claim 1 , wherein

the air gap or the acoustic mirror is an air space.

8. The piezoelectric thin film resonator according to claim 1 , wherein

the air gap or the acoustic mirror is an acoustic mirror that reflects an acoustic wave propagating through the piezoelectric film.

9. A piezoelectric thin film resonator comprising:

a substrate;

a piezoelectric film that is located on the substrate, and is formed of a lower piezoelectric film and an upper piezoelectric film that are stacked;

a lower electrode and an upper electrode that face each other across at least a part of the piezoelectric film; and

an insertion film that is inserted between the lower piezoelectric film and the upper piezoelectric film,

wherein an air gap or an acoustic mirror that includes a resonance region defined by a region where the lower electrode and the upper electrode face each other across the piezoelectric film and that is larger than the resonance region in plan view is located under the lower electrode, and

a multilayered film formed of the lower piezoelectric film, the insertion film, and the upper piezoelectric film that are stacked is located in at least a part of a region that is located further out than an outer outline of the resonance region, further in than an outer outline of the air gap or an outer outline of the acoustic mirror, and surrounds the resonance region,

the multilayered film is not located in a center region of the resonance region, and

in at least a part of the region surrounding the resonance region, an outer outline of the multilayered film is located further in than the outer outline of the air gap or the outer outline of the acoustic mirror.

10. A filter comprising:

a piezoelectric thin film resonator including:

a substrate;

a piezoelectric film that is located on the substrate, and is formed of a lower piezoelectric film and an upper piezoelectric film that are stacked;

a lower electrode and an upper electrode that face each other across at least a part of the piezoelectric film; and

an insertion film that is inserted between the lower piezoelectric film and the upper piezoelectric film,

wherein an air gap or an acoustic mirror that includes a resonance region defined by a region where the lower electrode and the upper electrode face each other across the piezoelectric film and that is larger than the resonance region in plan view is located under the lower electrode, and

a multilayered film formed of the lower piezoelectric film, the insertion film, and the upper piezoelectric film that are stacked is located in at least a part of a region that is located further out than an outer outline of the resonance region, further in than an outer outline of the air gap or an outer outline of the acoustic mirror, and surrounds the resonance region, and

the multilayered film is not located in the resonance region.

11. A duplexer comprising:

the filter according to claim 10 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 18, 2016
From: YOKOYAMA, TSUYOSHI; LIU, JIANSONG
To: TAIYO YUDEN CO., LTD.
Reel/Frame 040372/0504 →
Priority Claims (1)
JP 2015-243624 · Dec 14, 2015 · national
Continuity (1)
Related Publication 20170170809A1 · Jun 15, 2017