Etching compositions and methods for using same
A composition and method using same useful for etching a semiconductor substrate comprising: from about 25 to 86% by weight of water; from about 0 to about 60% by weight of a water-miscible organic solvent; from about 1 to about 30% by weight of a base comprising a quartenary ammonium compound; from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0 to about 5% by weight of a buffering agent; from about 0 to about 15% by weight of a corrosion inhibitor.
1. A composition useful for etching a semiconductor substrate comprising in effective etching amounts:
from about 25 to 66% by weight of water;
from about 0 to about 60% by weight of a water-miscible organic solvent selected from propylene glycol, tetrahydrofurfuryl alcohol, diacetone alcohol and 1,4-cyclohexanedimethanol;
from about 1 to about 30% by weight of a quaternary ammonium compound selected from benzyltrimethylammonium hydroxide and ethyltrimethylammonium hydroxide (ETMAH);
from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from monoethanol amine (MEA), triethanolamine (TEA), diethanolamine, N-methyl diethanolamine, diisopropanolamine, aminoethyl ethanol amine (AEE), N-methyl ethanol amine, and mixtures thereof;
from about 0 to about 5% by weight of a buffering agent; and
from about 0 to about 15% by weight of a corrosion inhibitor;
wherein the composition is free of alkali hydroxides;
wherein said etching composition provides a sigma-shaped profile.
2. The composition of claim 1 comprising:
from about 30 to 46% by weight of said water;
from about 10 to about 50% by weight of said water-miscible organic solvent;
from about 2 to about 6% by weight of said quaternary ammonium compound; and
from about 10 to about 50% by weight of said amine compound wherein said etching composition provides a sigma-shaped profile with a (110)/(100) selectivity ratio of about 0.3 or more.
3. The composition of claim 1 useful for etching a semiconductor substrate comprising in effective etching amounts:
from about 32 to 42% by weight of said water;
from about 20 to about 40% by weight of said water-miscible organic solvent;
from about 3 to about 5% by weight of said quaternary ammonium compound; and
from about 20 to about 40% by weight of said amine compound;
wherein said etching composition provides a sigma-shaped profile with a (110)/(100) selectivity ratio of greater than 0.3.
4. The composition of claim 3 useful for etching a semiconductor substrate comprising in effective etching amounts:
from about 34 to 40% by weight of said water;
from about 25 to about 35% by weight of said water-miscible organic solvent; and
from about 25 to about 35% by weight of said amine compound.
5. The composition of claim 1 useful for etching a semiconductor substrate comprising in effective etching amounts:
from about 56 to 66% by weight of water;
from about 1 to about 7% by weight of a quaternary ammonium compound; and
from about 30 to about 40% by weight of the amine compound;
wherein said etching composition is substantially free of water-miscible organic solvent and provides a sigma-shaped profile with a (110)/(100) selectivity ratio of about 0.3 or more.
6. The composition of claim 5 useful for etching a semiconductor substrate comprising in effective etching amounts:
from about 60 to 64% by weight of said water;
from about 2 to about 6% by weight of said quaternary ammonium compound; and
from about 32 to about 38% by weight of said amine compound.
7. The composition of claim 1 useful for etching a semiconductor substrate comprising in effective etching amounts:
from about 45 to 62% by weight of said water;
from about 2 to about 6% by weight of said quaternary ammonium compound;
from about 5 to about 35% by weight of said amine compound; and
from about 5 to about 30% by weight of a water-miscible organic solvent;
wherein said etching composition provides a sigma-shaped profile in said substrate with a (110)/(100) selectivity ratio of about 0.3 or more.
8. The composition of claim 7 useful for etching a semiconductor substrate comprising in effective etching amounts:
from about 49 to 60% by weight of said water;
from about 3 to about 5% by weight of said quaternary ammonium compound;
from about 10 to about 30% by weight of said amine compound; and
from about 5 to about 25% by weight of a water-miscible organic solvent;
wherein said etching composition provides a sigma-shaped profile in said substrate with a (110)/(100) selectivity ratio of about 0.3 or more.
9. The composition of claim 1 wherein said quaternary ammonium compound comprises benzyltrimethylammonium hydroxide.
10. The composition of claim 9 said amine comprises aminoethyl ethanol amine (AEE).
11. A method for etching a semiconductor substrate comprising:
contacting the semiconductor substrate with a composition comprising in effective etching amounts:
from about 25 to 66% by weight of water;
from about 0 to about 60% by weight of a water-miscible organic solvent selected from propylene glycol, tetrahydrofurfuryl alcohol, diacetone alcohol and 1,4-cyclohexanedimethanol;
from about 1 to about 30% by weight of a quaternary ammonium compound selected from benzyltrimethylammonium hydroxide and ethyltrimethylammonium hydroxide (ETMAH);
from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from monoethanol amine (MEA), triethanolamine (TEA), diethanolamine, N-methyl diethanolamine, diisopropanolamine, aminoethyl ethanol amine (AEE), N-methyl ethanol amine, and mixtures thereof;
from about 0 to about 5% by weight of a buffering agent; and
from about 0 to about 15% by weight of a corrosion inhibitor;
wherein the composition is free of alkali hydroxides; and
wherein the contacting step is conducted for a certain time and temperature effective to selectively etch a portion of the substrate and to provide a sigma shaped etch profile.
12. The method of claim 11 comprising contacting the semiconductor substrate with said composition comprising:
from about 30 to 46% by weight of said water;
from about 10 to about 50% by weight of said water-miscible organic solvent;
from about 2 to about 6% by weight of said quaternary ammonium compound; and
from about 10 to about 50% by weight of said amine compound wherein said etching composition provides a sigma-shaped profile with a (110)/(100) selectivity ratio of about 0.3 or more.
13. The method of claim 11 comprising contacting the semiconductor substrate with said composition comprising:
from about 32 to 42% by weight of said water;
from about 20 to about 40% by weight of said water-miscible organic solvent;
from about 3 to about 5% by weight of said quaternary ammonium compound; and
from about 20 to about 40% by weight of said amine compound;
wherein said etching composition provides a sigma-shaped profile with a (110)/(100) selectivity ratio of 0.3 or more.
14. The method of claim 13 comprising contacting the semiconductor substrate with said composition comprising:
from about 34 to 40% by weight of said water;
from about 25 to about 35% by weight of said water-miscible organic solvent; from about 3 to about 5% by weight of said quaternary ammonium compound; and
from about 25 to about 35% by weight of said amine compound.
15. The method of claim 11 comprising contacting the semiconductor substrate with said composition comprising:
from about 56 to 66% by weight of water;
from about 1 to about 7% by weight of a quaternary ammonium compound; and
from about 30 to about 40% by weight of said amine compound;
wherein said etching composition is substantially free of water-miscible organic solvent and provides a sigma-shaped profile with a (110)/(100) selectivity ratio of about 0.3 or more.
16. The method of claim 15 comprising contacting the semiconductor substrate with said composition comprising:
from about 60 to 64% by weight of said water;
from about 2 to about 6% by weight of said quaternary ammonium compound; and
from about 32 to about 38% by weight of said amine compound.
17. The method of claim 11 comprising contacting the semiconductor substrate with said composition comprising:
from about 45 to 62% by weight of said water;
from about 2 to about 6% by weight of said quaternary ammonium compound;
from about 5 to about 35% by weight of said amine compound; and
from about 5 to about 30% by weight of a water-miscible organic solvent;
wherein said etching composition provides a sigma-shaped profile in said substrate with a (110)/(100) selectivity ratio of about 0.3 or more.
18. The method of claim 17 comprising contacting the semiconductor substrate with said composition comprising:
from about 49 to 60% by weight of said water;
from about 3 to about 5% by weight of said quaternary ammonium compound;
from about 10 to about 30% by weight of said amine compound; and
from about 5 to about 25% by weight of a water-miscible organic solvent;
wherein said etching composition provides a sigma-shaped profile in said substrate with a (110)/(100) selectivity ratio of between from about 0.3 or more.
19. The method of claim 15 comprising contacting the semiconductor substrate with said composition wherein said quaternary ammonium compound comprises benzyltrimethylammonium hydroxide.
20. The method of claim 19 comprising contacting the semiconductor substrate with said composition comprising said one or more alkanolamines comprises aminoethyl ethanol amine (AEE).
21. The composition of claim 1 wherein said amine comprises aminoethyl ethanol amine (AEE).
22. The method of claim 11 , wherein said amine comprises aminoethyl ethanol amine (AEE).