IP Library › Granted Patent US 10,326,100
Granted Patent B2
US 10,326,100 · App. 15/357,636 · Granted Jun 18, 2019

Method for manufacturing light-emitting device

Inventors: Yoshiharu Hirakata (Kanagawa, JP); Shunpei Yamazaki (Tokyo, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/524H01L27/3209H01L51/003H01L51/0097H01L51/52H01L51/5253H01L51/56H01L27/3244H01L2227/323H01L2227/326H01L2251/5338H01L2251/5361H04M1/0268Y02E10/549Y02P70/521
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Quick Facts
Patent No.
US 10,326,100
App. No.
15/357,636
Granted
Jun 18, 2019
Kind
B2
Abstract

To provide a method for manufacturing a lightweight light-emitting device having a light-emitting region on a curved surface. The light-emitting region is provided on a curved surface in such a manner that a light-emitting element is formed on a flexible substrate supported in a plate-like shape and the flexible substrate deforms or returns.

Claims (23)

1. A semiconductor device comprising:

an exterior unit;

a display panel over the exterior unit;

a circuit over the display panel;

a layer comprising metal over the circuit;

a secondary battery over the layer comprising metal; and

a first lid over the secondary battery,

wherein each of the display panel and the circuit is provided in a first space formed between the exterior unit and the layer,

wherein the secondary battery is provided in a second space formed between the layer and the first lid,

wherein the display panel comprises a light-emitting element, and

wherein a light-emitting region of the display panel comprises curved edge portions.

2. The semiconductor device according to claim 1 , wherein the exterior unit comprises any one of metal, glass, and plastic.

3. The semiconductor device according to claim 1 , wherein the display panel comprises a metal plate or a plastic plate.

4. The semiconductor device according to claim 1 , wherein the display panel comprises a uniaxially-stretched substrate.

5. The semiconductor device according to claim 1 , wherein the layer comprising metal is a second lid.

6. The semiconductor device according to claim 1 , wherein the light-emitting element comprises an organic layer between a pair of electrodes.

7. The semiconductor device according to claim 1 ,

wherein the light-emitting element a comprises a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer,

wherein the first light-emitting layer emits blue light,

wherein the second light-emitting layer emits green light, and

wherein the third light-emitting layer emits red light.

8. The semiconductor device according to claim 1 , wherein the light-emitting element comprises a first light-emitting unit which emits blue light and a second light-emitting unit which emits yellow light.

9. The semiconductor device according to claim 1 , wherein the light-emitting element comprises a first light-emitting unit which emits blue-green light and a second light-emitting unit which emits red light.

Priority Claims (1)
JP 2012-178810 · Aug 10, 2012 · national
Continuity (2)
Continuation 13960998 · Aug 7, 2013
Related Publication 20170069867A1 · Mar 9, 2017
Cited By (1)
US 12,271,241