IP Library Granted Patent US 10,163,766
Granted Patent B2
US 10,163,766 · App. 15/357,680 · Granted Dec 25, 2018

Methods of forming leadless semiconductor packages with plated leadframes and wettable flanks

Inventors: Darrell D. Truhitte (Phoenix, AZ); James P. Letterman, Jr. (Mesa, AZ)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L23/49805H01L21/4842H01L21/561H01L23/49541H01L23/49551H01L23/49838H01L24/48H01L21/568H01L24/45H01L2021/60015H01L2224/45124H01L2224/45139H01L2224/45144H01L2224/45147H01L2224/48247H01L2924/181
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Quick Facts
Patent No.
US 10,163,766
App. No.
15/357,680
Granted
Dec 25, 2018
Kind
B2
Abstract

A leadless package with wettable flanks is formed by providing a substrate and plating a metal layer onto the substrate to form a contact on the substrate extending across a saw street. An encapsulant is deposited over the contact. The substrate is removed to expose the contact and encapsulant. The encapsulant and contact are singulated. In some embodiments, the substrate includes a ridge, and the contact is formed over the ridge.

Claims (39)

1. A method of making a semiconductor device, comprising:

providing a substrate;

forming a ridge in the substrate;

forming a contact over the ridge on the substrate;

depositing an encapsulant over the contact and substrate;

singulating through the encapsulant and contact; and

removing the substrate to expose a surface of the contact.

2. The method of claim 1 , further including forming the contact by plating a metal layer onto the substrate.

3. The method of claim 1 , further including forming the ridge using a press.

4. The method of claim 1 , further including forming the contact to include a neck across an area of singulation.

5. The method of claim 1 , further including reflowing a solder over the contact to form a solder fillet extending from a side surface of the contact.

6. The method of claim 1 , further including disposing a semiconductor die over the substrate.

7. The method of claim 6 , wherein a side surface of the contact is exposed by singulating the contact.

8. A method of making a semiconductor device, comprising:

providing a substrate including a ridge;

forming a first contact over a portion of the ridge;

depositing an encapsulant over the first contact and substrate;

singulating through the encapsulant over the ridge; and

removing the substrate to expose the first contact.

9. The method of claim 8 , further including forming the ridge using a press.

10. The method of claim 8 , further including forming the ridge by depositing a material over the substrate.

11. The method of claim 8 , further including:

forming a second contact over the ridge adjacent to the first contact;

depositing the encapsulant over the second contact; and

singulating the encapsulant between the first contact and second contact.

12. The method of claim 8 , further including forming the contact extending completely over the ridge.

13. The method of claim 8 , further including forming the contact to include a neck.

14. The method of claim 8 , further including removing the substrate by mechanical peeling or chemical etching.

15. A method of making a semiconductor device, comprising:

providing a substrate;

forming a ridge in the substrate;

forming a plated contact on the substrate;

depositing an encapsulant over the plated contact and substrate;

singulating through the encapsulant over the ridge; and

removing the substrate to expose a bottom surface of the plated contact.

16. The method of claim 15 , wherein the plated contact includes a slope.

17. The method of claim 15 , further including providing a solder fillet extending from the plated contact outside a footprint of the encapsulant.

18. The method of claim 17 , wherein the solder fillet extends from the plated contact to a contact pad of the substrate.

19. The method of claim 15 , wherein the plated contact includes a neck.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 054090, FRAME 0617 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064081/0167 →
SECURITY INTEREST Recorded Oct 16, 2020
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION; ON SEMICONDUCTOR CONNECTIVITY SOLUTIONS, INC.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 054090/0617 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 21, 2016
From: TRUHITTE, DARRELL D.; LETTERMAN, JAMES P., JR.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 040394/0597 →
Continuity (1)
Related Publication 20180145013A1 · May 24, 2018
Cited By (2)
US 12,354,918 US 12,588,150