Methods for forming low-resistance contacts through integrated process flow systems
Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.
1. A method of processing a substrate, comprising:
exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate;
transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere;
exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer; and
exposing the substrate to a tungsten hexafluoride (WF 6 ) gas at a temperature of about 200 to about 400 degrees Celsius prior to depositing the tungsten liner layer or to a hydrogen (H 2 ) gas at a temperature of about 300 to about 500 degrees Celsius prior to depositing the tungsten liner layer.
2. The method of claim 1 , wherein the tungsten liner layer has a thickness of about 10 to about 50 angstroms.
3. The method of claim 1 , wherein the first gas further comprises a hydrogen-containing gas.
4. The method of claim 3 , wherein the hydrogen-containing gas is hydrogen (H 2 ), or ammonia (NH 3 ).
5. The method of claim 1 , wherein the first gas further comprises a carrier gas.
6. The method of claim 5 , wherein the carrier gas is argon, helium, or nitrogen.
7. The method of claim 6 , wherein a flow rate of the carrier gas is about 100 sccm to about 600 sccm.
8. The method of claim 1 , wherein the metal organic tungsten precursor gas is W(CO) 6 , CpW(CO) 2 NO, EtCpW(CO) 2 NO, Cp*W(CO) 3 NO, Cp 2 WH 2 , C 4 H 9 CNW(CO) 5 , (C 5 H 11 CN)W(CO) 5 , W(C 3 H 5 ) 4 , W(C 3 H 4 CH 3 ) 4 , W(C 4 H 6 ) 3 , W(C 4 H 6 ) 2 (CO) 2 , or W(C 4 H 6 )(CO) 4 .
9. The method of claim 1 , wherein the first substrate process chamber is at a pressure of about 0.5 Torr to about 40 Torr.
10. The method of claim 1 , wherein the tungsten fluoride precursor is tungsten hexafluoride (WF 6 ).
11. The method of claim 1 , wherein the fluorine-free tungsten halide precursor is tungsten pentachloride (WCl 5 ) or tungsten hexachloride (WCl 6 ).
12. The method of claim 1 , wherein the second gas further comprises a hydrogen containing gas.
13. The method of claim 12 , wherein the hydrogen containing gas is hydrogen (H 2 ) or ammonia (NH 3 ).
14. The method of claim 1 , further comprising exposing the substrate to the tungsten hexafluoride (WF 6 ) gas or the hydrogen (H 2 ) gas for about 0.5 to about 600 seconds.
15. A method of processing a substrate, comprising:
exposing the substrate to a tungsten hexafluoride (WF 6 ) gas at a temperature of about 200 to about 400 degrees Celsius or to a hydrogen (H 2 ) gas at a temperature of about 300 to about 500 degrees Celsius for about 0.5 to about 600 seconds;
exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate;
transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and
exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.
16. The method of claim 15 , wherein the metal organic tungsten precursor gas is W(CO)6, CpW(CO)2NO, EtCpW(CO)2NO, Cp*W(CO)3NO, Cp2WH2, C4H9CNW(CO)5, (C5H11CN)W(CO)5, W(C3H5)4, W(C3H4CH3)4, W(C4H6)3, W(C4H6)2(CO)2, or W(C4H6)(CO)4.
17. The method of claim 15 , wherein the tungsten fluoride precursor is tungsten hexafluoride (WF6).
18. The method of claim 15 , wherein the fluorine-free tungsten halide precursor is tungsten pentachloride (WCl 5 ) or tungsten hexachloride (WCl 6 ).
19. A computer readable medium, having instructions stored thereon which, when executed, cause a process chamber to perform a method of processing a substrate, the method comprising:
exposing the substrate to a tungsten hexafluoride (WF 6 ) gas at a temperature of about 200 to about 400 degrees Celsius or to a hydrogen (H 2 ) gas at a temperature of about 300 to about 500 degrees Celsius for about 0.5 to about 600 seconds;
exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate;
transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and
exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.