Metal chalcogenides for pseudocapacitive applications
A synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism. The metal dichalcogenide is receptive to intercalation of ions such as Li ions, Na ions, Mg ions, and Ca ions, and does not undergo a phase transition upon intercalation of Li ions, Na ions, Mg ions, or Ca ions. The metal dichalcogenide can be used, for example, as a component of an electrode that also includes a carbon derivative, and a binder, which are intermixed to form the electrode. The resultant composite electrode is highly porous and highly electronically conductive, and is suitable for use in devices such as symmetric capacitors, asymmetric capacitors, rocking chair batteries, and other devices.
1. A material comprising, a synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, wherein the metal dichalcogenide does not undergo a first order phase transition between 1T and triclinic phases upon intercalation of Li ions, Na ions, Mg ions, or Ca ions and wherein the defected-structure facilitates a pseudocapacitive charge storage mechanism.
2. The material of claim 1 , wherein the metal dichalcogenide is selected from the group consisting of transition metal disulphides, diselenides, and ditellurides, and mixed transition metal combinations thereof.
3. The material of claim 1 , wherein the metal dichalcogenide is selected from the group consisting of MoS 2 , NbS 2 , TaS 2 , TiS 2 , and VS 2 .
4. A material comprising:
a synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism;
wherein the metal dichalcogenide is selected from the group consisting of transition metal disulphides, diselenides, and ditellurides, and mixed transition metal combinations thereof;
wherein the defected structure is receptive to intercalation of ions selected from the group consisting of Li ions, Na ions, Mg ions, and Ca ions; and
wherein the metal dichalcogenide does not undergo a first order phase transition between 1T and triclinic phases upon intercalation of Li ions, Na ions, Mg ions, or Ca ions.
5. A material comprising:
a synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism;
wherein the metal dichalcogenide is selected from the group consisting of MoS 2 , NbS 2 , TaS 2 , TiS 2 , and VS 2 ; and
wherein the defected structure is receptive to intercalation of ions selected from the group consisting of Li ions, Na ions, Mg ions, and Ca ions without undergoing a first order phase transition between 1T and triclinic phases.
6. A composite electrode, comprising:
(a) a synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, wherein the metal dichalcogenide does not undergo a first order phase transition between 1T and triclinic phases upon intercalation of Li ions, Na ions, Mg ions, or Ca ions, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism;
(b) a carbon derivative; and
(c) a binder;
(d) wherein said synthetic metal dichalcogenide-, said carbon derivative, and said binder are intermixed to form a composite electrode.
7. The composite electrode of claim 6 , wherein the binder is polyacrylic acid.
8. The composite electrode of claim 6 , wherein the carbon derivative comprises a plurality of carbon fibers, or carbon black, or carbon black and a plurality of carbon fibers.
9. The composite electrode of claim 6 , wherein the metal dichalcogenide is selected from the group consisting of transition metal disulphides, diselenides, and ditellurides, and mixed transition metal combinations thereof.
10. The composite electrode of claim 6 , wherein the metal dichalcogenide is selected from the group consisting of MoS 2 , NbS 2 , TaS 2 , TiS 2 , and VS 2 .
11. The composite electrode of claim 6 :
wherein the metal dichalcogenide is selected from the group consisting of transition metal disulphides, diselenides, and ditellurides, and mixed transition metal combinations thereof; and
wherein the defected structure is receptive to intercalation of ions selected from the group consisting of Li ions, Na ions, Mg ions, and Ca.
12. The composite electrode of claim 6 :
wherein the metal dichalcogenide is selected from the group consisting of MoS 2 , NbS 2 , TaS 2 , TiS 2 , and VS 2 ; and
wherein the defected structure is receptive to intercalation of ions selected from the group consisting of Li ions, Na ions, Mg ions, and Ca.
13. The composite electrode of claim 6 , wherein said composite electrode is a component of a charge storage device.
14. The composite electrode of claim 13 , wherein the charge storage device comprises an electrochemical cell, a symmetric capacitor, or an asymmetric capacitor.
15. The composite electrode of claim 14 , wherein said electrochemical cell comprises said composite electrode and a Li-ion, Na-ion, Mg-ion, or Ca-ion cathode.