Nonvolatile memory device and storage device including nonvolatile memory device

1. A storage device, comprising:

a nonvolatile memory device; and

a controller configured to send first data, an address, and a first command to the nonvolatile memory device and further send at least one data to the nonvolatile memory device after sending the first data, the address, and the first command,

wherein the nonvolatile memory device is configured to initiate a program operation by applying first voltages to selected memory cells, based on the first data, in response to the first command, and before receiving the at least one data, and

wherein, when receiving the at least one data from the controller, the nonvolatile memory device is configured to continue to perform the program operation by applying second voltages to the selected memory cells based on the first data and the at least one data.

2. The storage device of claim 1 , wherein the controller is configured to send second data, the address, and a second command to the nonvolatile memory device after sending the first data, the address, and the first command, and

wherein, after receiving the second data from the controller, the nonvolatile memory device is configured to continue to perform the program operation by using at least one of the first data and the second data.

3. The storage device of claim 2 , wherein the controller is configured to send third data, the address, and a third command to the nonvolatile memory device after sending the second data, the address, and the second command, and

wherein, after receiving the third data from the controller, the nonvolatile memory device is configured to continue to perform the program operation by using at least one of the first data and the second data in response to the third command.

4. The storage device of claim 3 , wherein the first data is programmed as first bits in selected memory cells of the nonvolatile memory device corresponding to the address, the second data is programmed as second bits in the selected memory cells, and the third data is programmed as third bits in the selected memory cells.

5. The storage device of claim 3 , wherein the nonvolatile memory device is configured to apply a program voltage of a first program loop to selected memory cells corresponding to the address while receiving the second data, the address, and the second command.

6. The storage device of claim 5 , wherein the nonvolatile memory device is configured to classify the selected memory cells into program memory cells and program-inhibit memory cells based on the first data when the program voltage of the first program loop is applied to the selected memory cells.

7. The storage device of claim 5 , wherein the nonvolatile memory device is configured to perform a verification read of the first program loop with respect to the selected memory cells while receiving the second data, the address, and the second command.

8. The storage device of claim 7 , wherein the verification read of the first program loop is performed by using a verification voltage associated with a program state, among a plurality of program states for the selected memory cells, having a lowest threshold voltage distribution range among threshold voltage distribution ranges for the program states.

9. The storage device of claim 7 , wherein after receiving the second data, the address, and the second command, the nonvolatile memory device is configured to perform a dump, which selects an inhibit target of an additional program by using at least one of the first data and the second data, with respect to a result of the verification read.

10. The storage device of claim 5 , wherein the nonvolatile memory device is configured to perform a pass-fail check of the first program loop with respect to the selected memory cells after receiving the second data, the address, and the second command.

11. The storage device of claim 5 , wherein the nonvolatile memory device is configured to apply a program voltage of a second program loop to the selected memory cells corresponding to the address while receiving the third data, the address, and the third command.

12. The storage device of claim 11 , wherein the nonvolatile memory device is configured to classify the selected memory cells into program memory cells and program-inhibit memory cells based on at least one of the first data and the second data when the program voltage of the second program loop is applied to the selected memory cells.

13. The storage device of claim 11 , wherein the nonvolatile memory device is configured to perform a verification read of the second program loop with respect to the selected memory cells while receiving the third data, the address, and the third command.

14. The storage device of claim 13 , wherein the verification read of the second program loop is performed by using at least one of a first verification voltage associated with a program state, among a plurality of program states for the selected memory cells, having a lowest threshold voltage distribution range among threshold voltage distribution ranges for the program states, and a second verification voltage associated with a program state, among the plurality of program states, having a second lowest threshold voltage distribution range among the threshold voltage distribution ranges for the program states.

15. The storage device of claim 13 , wherein after receiving the third data, the address, and the third command, the nonvolatile memory device is configured to perform a dump, which selects an inhibit target of an additional program by using at least one of the first data, the second data, and the third data, with respect to a result of the verification read.

16. The storage device of claim 11 , wherein the nonvolatile memory device is configured to perform a pass-fail check of the second program loop with respect to the selected memory cells after receiving the third data, the address, and the third command.

17. The storage device of claim 11 , wherein the first program loop and the second program loop are performed without a verification.

18. The storage device of claim 11 , wherein the first program loop is performed without a verification and the second program loop comprises a verification using a verification voltage associated with a program state having a lowest threshold voltage distribution range among threshold voltage distribution ranges for a plurality of program states for the selected memory cells.

19. A nonvolatile memory device, comprising:

a memory cell array comprising a plurality of memory cells;

a page buffer circuit connected with the plurality of memory cells through bit lines and configured to store data received from an external device; and

a row decoder circuit connected with the plurality of memory cells through word lines and configured to perform a program operation with respect to memory cells selected from the plurality of memory cells as selected memory cells based on the data stored on the page buffer circuit,

wherein the row decoder circuit and the page buffer circuit are configured to initiate a program operation, by applying a first voltage to the selected memory cells, when first data is loaded onto the page buffer circuit and before second data and third data are sequentially loaded onto the page buffer circuit, and

wherein as the second data and the third data are additionally sequentially loaded onto the page buffer circuit, the program operation is sequentially updated and continuously performed by applying a second voltage to the selected memory cells.

20. A method of programming data in a nonvolatile memory device, the method comprising:

sending first data to the nonvolatile memory device to initiate a program operation before second data is sent to and received by the nonvolatile memory device such that the nonvolatile memory device applies first voltages to selected memory cells based on the first data;

sending the second data to the nonvolatile memory device to update the program operation while performing the program operation such that the nonvolatile memory device applies second voltages to the selected memory cells based on the first data and the second data; and

sending third data to the nonvolatile memory device to further update the program operation and continuing to perform the program operation such that the nonvolatile memory device applies second voltages to the selected memory cells based on the first data, the second data and the third data.