High thermal conductivity vias by additive processing
An integrated circuit has a substrate and an interconnect region disposed on the substrate. The interconnect region includes a plurality of interconnect levels. Each interconnect level includes interconnects in dielectric material. The integrated circuit includes a thermal via in the interconnect region. The thermal via extends vertically in at least one of the interconnect levels in the interconnect region. The thermal via includes a cohered nanoparticle film in which adjacent nanoparticles are cohered to each other. The thermal via has a thermal conductivity higher than dielectric material touching the thermal via. The cohered nanoparticle film is formed by a method which includes an additive process.
1. An integrated circuit, comprising:
a substrate comprising semiconductor material;
an interconnect region disposed above the substrate, the interconnect region comprising a dielectric layer stack comprising dielectric materials;
a component disposed in the substrate and configured to generate heat when operating; and
a thermal via disposed in the interconnect region and landing on a field oxide region formed in the substrate, wherein the thermal via includes a cohered nanoparticle film which includes primarily nanoparticles, wherein each nanoparticle of a plurality of the nanoparticles is attached directly to an adjacent one of the nanoparticles, wherein the thermal via has a thermal conductivity higher than dielectric materials touching the thermal via.
2. The integrated circuit of claim 1 , wherein the cohered nanoparticle film comprises electrically non-conductive nanoparticles of a material selected from the group consisting of aluminum oxide, diamond, hexagonal boron nitride, cubic boron nitride, and aluminum nitride.
3. The integrated circuit of claim 1 , wherein the cohered nanoparticle film comprises electrically conductive nanoparticles of a material selected from the group consisting of metal, graphene, graphene embedded in metal, graphite, graphitic carbon, and carbon nanotubes.
4. The integrated circuit of claim 1 , wherein the cohered nanoparticle film comprises nanoparticles which include a metal selected from the group consisting of copper, nickel, palladium, platinum, iridium, rhodium, cerium, osmium, molybdenum and/or gold, and wherein the thermal via comprises a layer of graphitic material disposed on the cohered nanoparticle film.
5. The integrated circuit of claim 1 , wherein the thermal via is a first thermal via and further comprising a second thermal via disposed in the interconnect region above the first thermal via, wherein the second thermal via includes a cohered nanoparticle film that includes nanoparticles each attached to multiple adjacent nanoparticles, and wherein the second thermal via has a thermal conductivity higher than dielectric materials touching the second thermal via.
6. The integrated circuit of claim 5 , wherein the second thermal via contacts the first thermal via.
7. The integrated circuit of claim 5 , further comprising a non-circuit interconnect disposed between the first thermal via and the second thermal via, wherein the second thermal via contacts the non-circuit interconnect and the first thermal via contacts the non-circuit interconnect.
8. The integrated circuit of claim 1 , wherein the thermal via contacts a first interconnect and a second interconnect, the first interconnect being electrically isolated from the second interconnect.
9. The integrated circuit of claim 1 , wherein the thermal via extends proximate to matching components of the integrated circuit.
10. The integrated circuit of claim 1 , wherein each one of the nanoparticles is attached to at least one nanoparticle above and at least one nanoparticle below said each one with respect to a top surface of the substrate.
11. The integrated circuit of claim 1 , wherein the thermal via lands on a field oxide includes a shallow trench isolation structure or a local-oxidation of silicon structure.
12. An integrated circuit, comprising:
a substrate comprising semiconductor material;
an interconnect region disposed above the substrate, the interconnect region comprising a dielectric layer stack comprising dielectric materials;
a component disposed in the substrate and configured to generate heat when operating; and
a thermal via disposed in the interconnect region and landing on a field oxide region that extends below a surface of the substrate, wherein the thermal via is partially filled with a cohered nanoparticle film that includes primarily nanoparticles each attached directly to multiple adjacent ones of the nanoparticles, and a remaining portion of the thermal via is filled with a graphitic layer over the cohered nanoparticle film.
13. The integrated circuit of claim 12 , wherein the cohered nanoparticle film comprises electrically non-conductive nanoparticles of a material selected from the group consisting of aluminum oxide, diamond, hexagonal boron nitride, cubic boron nitride, and aluminum nitride.
14. The integrated circuit of claim 12 , wherein the cohered nanoparticle film comprises electrically conductive nanoparticles of a material selected from the group consisting of metal, graphene, graphene embedded in metal, graphite, graphitic carbon, and carbon nanotubes.
15. The integrated circuit of claim 12 , wherein the cohered nanoparticle film comprises nanoparticles which include a metal selected from the group consisting of copper, nickel, palladium, platinum, iridium, rhodium, cerium, osmium, molybdenum and/or gold, and wherein the thermal via comprises a layer of graphitic material disposed on the cohered nanoparticle film.
16. The integrated circuit of claim 12 , wherein the thermal via contacts a first interconnect and a second interconnect, the first interconnect being electrically isolated from the second interconnect.
17. The integrated circuit of claim 12 , wherein the field oxide region includes a shallow trench isolation structure or a local-oxidation of silicon structure.
18. An integrated circuit, comprising:
a substrate comprising semiconductor material;
an interconnect region disposed above the substrate, the interconnect region comprising a dielectric layer stack comprising dielectric materials;
a component disposed in the substrate and configured to generate heat when operating; and
a thermal via disposed in the interconnect region and landing on a field oxide region formed over the substrate, wherein the thermal via is substantially filled with nanoparticles.
19. The integrated circuit of claim 18 , wherein the nanoparticles comprise electrically non-conductive nanoparticles of a material selected from the group consisting of aluminum oxide, diamond, hexagonal boron nitride, cubic boron nitride, and aluminum nitride.
20. The integrated circuit of claim 18 , wherein the nanoparticles comprise electrically conductive nanoparticles of a material selected from the group consisting of metal, graphene, graphene embedded in metal, graphite, graphitic carbon, and carbon nanotubes.
21. The integrated circuit of claim 18 , wherein the nanoparticles comprise nanoparticles that include a metal selected from the group consisting of copper, nickel, palladium, platinum, iridium, rhodium, cerium, osmium, molybdenum and/or gold, and wherein the thermal via comprises a layer of graphitic material disposed on the nanoparticles.
22. The integrated circuit of claim 18 , wherein the thermal via is a first thermal via and further comprising a second thermal via disposed in the interconnect region above the first thermal via, wherein the second thermal via includes a cohered nanoparticle film in which adjacent nanoparticles are attached to each other, and wherein the second thermal via has a thermal conductivity higher than dielectric materials touching the second thermal via.
23. The integrated circuit of claim 18 , wherein the thermal via extends proximate to matching components of the integrated circuit.
24. The integrated circuit of claim 18 , wherein the field oxide region includes a shallow trench isolation structure or a local-oxidation of silicon structure.