Photomask having a plurality of shielding layers
View Patent ↗In some embodiments, a patterned photomask has a plurality of shielding layers. In some embodiments, a photomask for mask patterning is described. The photomask includes a phase shift layer overlying a transparent layer. The photomask also includes a first shielding layer overlying the phase shift layer. The first shielding layer has a first thickness and a first optical density. The photomask further includes a second shielding layer overlying the first shielding layer. The second shielding layer has a second thickness and a second optical density. The second thickness is less that than the first thickness and the second optical density is less than the first optical density.
1. A photomask for mask patterning, comprising:
a phase shift layer overlying a transparent layer;
a first shielding layer overlying the phase shift layer, wherein the first shielding layer has a first thickness and a first optical density; and
a second shielding layer overlying the first shielding layer, wherein the second shielding layer has a second thickness and a second optical density, and wherein the second thickness is less than the first thickness and the second optical density is less than the first optical density.
2. The photomask for mask patterning of claim 1 , wherein the first shielding layer is comprised of tantalum borate.
3. The photomask for mask patterning of claim 1 , wherein the first shielding layer and the second shielding layer collectively have an optical density that is at least 1.8.
4. The photomask for mask patterning of claim 1 , wherein the first shielding layer is comprised of tantalum borate (B 5 O 15 Ta 3 ).
5. The photomask for mask patterning of claim 1 , wherein the second shielding layer is comprised of chromium nitride (CrN).
6. The photomask for mask patterning of claim 1 , wherein the first shielding layer and the second shielding layer can be etched by a first etchant.
7. The photomask for mask patterning of claim 1 , wherein the phase shift layer and the first shielding layer can both be etched by a second etchant.
8. The photomask for mask patterning of claim 1 , wherein the photomask has a photomask optical density of greater than 3.0.
9. A photomask for mask patterning, comprising:
a phase shift layer comprised of molybdenum silicide (MoSi) overlying a transparent layer comprised of quartz;
a first shielding layer overlying the phase shift layer, wherein the first shielding layer is comprised of tantalum borate (B 5 O 15 Ta 3 ) having a first thickness of 20 nanometers (nm) to 28 nm; and
a second shielding layer overlying the first shielding layer, wherein the second shielding layer is comprised of chromium nitride (CrN) having a second thickness of 3 nm to 7 nm.
10. The photomask for mask patterning of claim 9 , wherein the first shielding layer has a first optical density and the second shielding layer has a second optical density, and wherein the second optical density is less than the first optical density.
11. The photomask for mask patterning of claim 10 , wherein the first optical density is approximately 1.6 and the second optical density is approximately 0.23.
12. The photomask for mask patterning of claim 9 , wherein the first shielding layer and the second shielding layer collectively have a combined optical density greater than a desired optical density.
13. The photomask for mask patterning of claim 12 , wherein the desired optical density is approximately 1.8.
14. The photomask for mask patterning of claim 9 , wherein the photomask has a photomask optical density of greater than 3.0.
15. A method for mask patterning, the method for mask patterning comprising:
forming a phase shift layer comprised of molybdenum silicide (MoSi) overlying a transparent layer comprised of quartz;
forming a first shielding layer overlying the phase shift layer, wherein the first shielding layer has a first thickness and a first optical density;
forming a second shielding layer overlying the first shielding layer, wherein the second shielding layer has a second thickness and a second optical density, and wherein the second thickness is less that than the first thickness and the second optical density is less than the first optical density; and
forming a photoresist layer overlying the second shielding layer.
16. The method of claim 15 , wherein the first shielding layer and the second shielding layer collectively have a combined optical density greater than a desired optical density.
17. The method of claim 16 , wherein the first optical density is approximately 1.6, the second optical density is approximately 0.23, and the desired optical density is 1.8.
18. The method of claim 15 , further comprising:
baking the photoresist layer in a post exposure bake; and
developing the photoresist layer to form a plurality of photoresist sections, each photoresist section having photoresist sidewalls.
19. The method of claim 18 , further comprising:
etching the first shielding layer and the second shielding layer with a first etchant to form a plurality of first shielding sections, wherein each first shielding section has first shielding sidewalls, wherein the photoresist sidewalls are aligned with the first shielding sidewalls; and
removing the plurality of photoresist sections.
20. The method of claim 19 , further comprising:
etching the first shielding layer and the phase shift layer with a second etchant to form a plurality of second shielding sections, wherein each second shielding section has second shielding sidewalls aligned with the first shielding sidewalls.