Planar processing of suspended microelectromechanical systems (MEMS) devices
Suspended microelectromechanical systems (MEMS) devices including a stack of one or more materials over a cavity in a substrate are described. The suspended MEMS device may be formed by forming the stack, which may include one or more electrode layers and an active layer, over the substrate and removing part of the substrate underneath the stack to form the cavity. The resulting suspended MEMS device may include one or more channels that extend from a surface of the device to the cavity and the one or more channels have sidewalls with a spacer material. The cavity may have rounded corners and may extend beyond the one or more channels to form one or more undercut regions. The manner of fabrication may allow for forming the stack layers with a high degree of planarity.
1. A microelectromechanical systems (MEMS) device comprising:
a bottom electrode positioned over a cavity of a silicon substrate;
a top electrode;
an active layer positioned between the bottom electrode and the top electrode, wherein the top electrode has regions in contact with a surface of the active layer;
spacer material contacting the surface of the active layer between the regions of the top electrode, wherein the regions of the top electrode have overhang portions adjacent a top surface of portions of the spacer material; and
at least one channel extending from a surface of the microelectromechanical device to the cavity, wherein one or more sidewalls of the at least one channel include a sidewall spacer.
2. The MEMS device of claim 1 , wherein the bottom electrode, the top electrode, and the active layer are enclosed by at least one spacer material in at least one cross-sectional plane of the microelectromechanical device.
3. The MEMS device of claim 1 , wherein the spacer material contacting the surface of the active layer includes a portion positioned over the regions of the top electrode and in contact with the top electrode.
4. The MEMS device of claim 3 , wherein the spacer material contacting the surface of the active layer is configured to provide thermal compensation for the MEMS device.
5. The MEMS device of claim 1 , wherein the cavity extends from underneath the bottom electrode beyond the at least one channel.
6. The MEMS device of claim 5 , wherein the cavity has rounded corners.
7. The MEMS device of claim 1 , further comprising:
at least one silicon layer positioned between the bottom electrode and the cavity; and
a spacer layer positioned between the bottom electrode and the at least one silicon layer.
8. The MEMS device of claim 1 , wherein the bottom electrode and the top electrode are in contact with the active layer.
9. The MEMS device of claim 1 , wherein:
the bottom electrode, the active layer, and the top electrode form a resonator region of the MEMS device,
the MEMS device further is comprised of a tether region separate from the resonator region, and
the tether region is comprised of at least one oxide layer positioned between a layer of active material and a contact, wherein the layer of active material and the active layer of the resonator region are coplanar.
10. The MEMS device of claim 9 , wherein the contact is a contact of the bottom electrode.
11. The MEMS device of claim 1 , wherein the MEMS device further comprises at least one trench that extends into the silicon substrate, and the cavity extends to the at least one trench.
12. A method for forming a microelectromechanical systems (MEMS) device comprising:
forming an electrode layer over a silicon substrate;
forming an active layer over the electrode layer;
patterning the electrode layer and the active layer to form a bottom electrode and an active region;
forming a spacer layer over the active region and patterning the spacer layer to form a plurality of portions;
forming a top electrode over the active region and the portions of the spacer layer, wherein:
the active region is positioned between the bottom electrode and the top electrode,
the top electrode includes a plurality of regions separated from each other by the portions of the spacer layer, and
the regions of the top electrode have overhang portions adjacent a top surface of at least one of the portions of the spacer layer; and
forming a cavity in the silicon substrate by:
forming at least one channel that extends from a surface to the silicon substrate, and
laterally etching at least a portion of the silicon substrate under the bottom electrode.
13. The method of claim 12 , further comprising:
forming a layer of epitaxial silicon on a surface of the silicon substrate and forming an oxide layer over the layer of epitaxial silicon, wherein the electrode layer is formed to be in contact with the oxide layer.
14. The method of claim 12 , further comprising:
forming a layer of spacer material over the top electrode, wherein the layer of spacer material is in contact with the top electrode and is configured to provide thermal compensation to the top electrode.
15. The method of claim 12 , wherein the cavity extends from underneath the bottom electrode beyond the at least one channel and has rounded corners.
16. The method of claim 12 , wherein:
the silicon substrate is a silicon-on-insulator substrate, and
the forming of the at least one channel is comprised of forming the at least one channel to extend to an insulator layer of the silicon-on-insulator substrate.
17. A method for forming a microelectromechanical systems (MEMS) device comprising:
forming a bottom electrode and an active layer over a silicon substrate;
forming spacer material in contact with a surface of the active layer, wherein the spacer material includes a plurality of portions in contact with the surface of the active layer, and wherein the surface of the active layer includes exposed regions adjacent regions in contact with the portions of the spacer material;
forming a top electrode to include a plurality of regions that contact the exposed regions of the active layer, wherein the regions of the top electrode have side portions adjacent side surfaces of the portions of the spacer material and overhang portions adjacent top surfaces of the portions of the spacer material;
forming at least one channel that extends to the silicon substrate;
forming a spacer on a surface of the at least one channel; and
forming a cavity underneath the bottom electrode by laterally etching a portion of the silicon substrate under the bottom electrode.
18. The method of claim 17 , further comprising:
forming a layer of epitaxial silicon on a surface of the silicon substrate and forming an oxide layer over the layer of epitaxial silicon, wherein the bottom electrode is formed to be in contact with the oxide layer.
19. The method of claim 17 , further comprising:
forming a spacer layer over the top electrode, wherein the spacer layer is in contact with the top electrode and is configured to provide thermal compensation to the top electrode.
20. The method of claim 17 , wherein the cavity extends from underneath the bottom electrode beyond the at least one channel and has rounded corners.