Methods of forming thin film and fabricating integrated circuit device using niobium compound
A method of forming a thin film includes forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1): Nb(R 5 Cp) 2 (L) Formula (1) (where each R is independently H, a C1 to C6 alkyl group, or R 1 3 Si, with each R 1 being independently H or a C1 to C6 alkyl group, Cp is a cyclopentadienyl group, and L is a formamidinate, an amidinate, or a guanidinate.
1. A method of forming a thin film, the method comprising:
forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1):
Nb(R 5 Cp) 2 (L) Formula (1)
wherein, in Formula (1),
each R is independently H, a C1 to C6 alkyl group, or R 1 3 Si, with each R 1 being independently H or a C1 to C6 alkyl group,
Cp is a cyclopentadienyl group, and
L is a formamidinate, an amidinate, or a guanidinate.
2. The method as claimed in claim 1 , wherein the niobium compound has one of Chemical Formulae 1, 2, and 3:
wherein R, R′, R″, and R′″ are each independently H, a C1 to C6 alkyl group, or R 1 3 Si, with each R 1 being defined as in Formula (1).
3. The method as claimed in claim 1 , wherein the niobium precursor composition consists essentially of the niobium compound represented by Formula (1).
4. The method as claimed in claim 1 , wherein the niobium precursor composition includes
the niobium compound represented by Formula (1), and
impurities including an organic compound, a metal, or combinations thereof.
5. The method as claimed in claim 1 , wherein the reactant is selected from among N 2 , NH 3 , N 2 H 4 , N(SiH 3 ) 3 , N(CH 3 )H 2 , N(C 2 H 5 )H 2 , N(CH 3 ) 2 H, N(C 2 H 5 ) 2 H, N(CH 3 ) 3 , N(C 2 H 5 ) 3 , (SiMe 3 ) 2 NH, (CH 3 )HNNH 2 , (CH 3 ) 2 NNH 2 , phenylhydrazine, pyrazoline, radicals thereof, and mixtures thereof.
6. The method as claimed in claim 1 , wherein the forming of the niobium-containing film includes:
vaporizing the niobium precursor composition which includes the niobium compound represented by Formula (1);
forming a Nb source adsorption layer on the substrate by supplying the vaporized niobium precursor composition onto the substrate; and
supplying the reactant onto the Nb source adsorption layer.
7. The method as claimed in claim 6 , wherein the forming of the niobium-containing film further includes plasma-treating the vaporized niobium precursor composition, before the supplying of the vaporized niobium precursor composition onto the substrate.
8. The method as claimed in claim 6 , wherein the forming of the niobium-containing film further includes plasma-treating the reactant, before the supplying of the reactant onto the Nb source adsorption layer.
9. The method as claimed in claim 1 , wherein the forming of the niobium-containing film includes simultaneously supplying the niobium precursor composition and the reactant, the niobium precursor composition including the niobium compound represented by Formula (1).
10. The method as claimed in claim 9 , wherein the forming of the niobium-containing film further includes plasma-treating at least one of the niobium precursor composition and the reactant, during the simultaneously supplying of the niobium precursor composition and the reactant.
11. The method as claimed in claim 1 , wherein the niobium compound is a liquid at room temperature.
12. A method of fabricating an integrated circuit device, the method comprising:
forming a lower structure on a substrate; and
forming a niobium-containing film on the lower structure by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1):
Nb(R 5 Cp) 2 (L) Formula (1)
wherein, in Formula (1),
each R is independently H, a C1 to C6 alkyl group, or R 1 3 Si, with each R 1 being independently H or a C1 to C6 alkyl group,
Cp is a cyclopentadienyl group, and
L is a formamidinate, an amidinate, or a guanidinate.
13. The method as claimed in claim 12 , wherein the niobium compound has one of Chemical Formulae 1, 2, and 3:
wherein R, R′, R″, and R′″ are each independently H, a C1 to C6 alkyl group, or R 1 3 Si, with each R 1 being defined as in Formula (1).
14. The method as claimed in claim 12 , wherein the forming of the lower structure includes forming a dielectric film having a higher dielectric constant than silicon oxide, and
the forming of the niobium-containing film includes forming a NbN film on the dielectric film.
15. The method as claimed in claim 12 , wherein the forming of the lower structure includes:
forming a fin active region protruding upwards from the substrate;
forming an interface layer on a surface of the fin active region; and
forming a dielectric film on the interface layer, and
wherein the forming of the niobium-containing film includes forming a NbN film on the dielectric film.
16. A method of forming a semiconductor device, the method comprising:
vaporizing a niobium compound represented by Formula (1) and supplying the vaporized niobium compound to a substrate; and
reacting the niobium compound with a nitrogen-containing reactant to form an electrically conductive niobium nitride layer on the substrate,
Nb(R 5 Cp) 2 (L) Formula (1)
wherein, in Formula (1),
each R is independently H, a C1 to C6 alkyl group, or R 1 3 Si, with each R 1 being independently H or a C1 to C6 alkyl group,
Cp is a cyclopentadienyl group, and
L is a formamidinate, an amidinate, or a guanidinate.
17. The method as claimed in claim 16 , wherein the substrate has a dielectric layer, and the niobium nitride layer is formed directly on the dielectric layer.
18. The method as claimed in claim 17 , wherein the dielectric layer includes zirconium oxide.
19. The method as claimed in claim 17 , wherein the semiconductor device includes a capacitor having a first electrode, a second electrode, and a dielectric between the first and second electrodes, at least one of the first and second electrodes including the niobium nitride layer, and the dielectric including the dielectric layer.
20. The method as claimed in claim 17 , wherein the semiconductor device includes a transistor having a gate electrode, the gate electrode including the niobium nitride layer.