Porous silicon relaxation medium for dislocation free CMOS devices
A method for forming CMOS devices includes masking a first portion of a tensile-strained silicon layer of a SOI substrate, doping a second portion of the layer outside the first portion and growing an undoped silicon layer on the doped portion and the first portion. The undoped silicon layer becomes tensile-strained. Strain in the undoped silicon layer over the doped portion is relaxed by converting the doped portion to a porous silicon to form a relaxed silicon layer. The porous silicon is converted to an oxide. A SiGe layer is grown and oxidized to convert the relaxed silicon layer to a compressed SiGe layer. Fins are etched in the first portion from the tensile-strained silicon layer and the undoped silicon layer and in the second portion from the compressed SiGe layer.
1. A method for forming complementary metal oxide semiconductor devices, comprising:
masking a first portion of a tensile-strained silicon layer of a silicon on insulator substrate with a hard mask;
etching a second portion of the tensile-strained silicon layer outside the first portion;
doping the second portion of the tensile-strained silicon layer outside the first portion;
growing an undoped silicon layer on the doped portion;
removing the hard mask;
relaxing strain in the undoped silicon layer over the doped portion by converting the doped portion to a porous silicon to form a relaxed silicon layer;
converting the porous silicon to an oxide;
growing a SiGe layer on the relaxed silicon layer;
oxidizing the SiGe layer to convert the relaxed silicon layer to a compressed SiGe layer; and
etching fins in the first portion from the tensile-strained silicon layer and the undoped silicon layer and in the second portion from the compressed SiGe layer.
2. The method as recited in claim 1 , wherein doping the second portion of the tensile-strained silicon layer include boron doping the second portion.
3. The method as recited in claim 1 , wherein relaxing strain in the undoped silicon layer over the doped portion by converting the doped portion to a porous silicon to form a relaxed silicon layer includes converting the doped portion to the porous silicon with a porosity of at least 50%.
4. The method as recited in claim 1 , wherein oxidizing the SiGe layer to convert the relaxed silicon layer to a compressed SiGe layer includes employing a condensation process to form the compressed SiGe layer.
5. The method as recited in claim 1 , further comprising forming N-type field effect transistors from the fins formed from the tensile-strained silicon layer and the tensile-strained silicon layer and forming P-type field effect transistors from the compressed SiGe layer.
6. The method as recited in claim 5 , wherein the N-type field effect transistors and the P-type field effect transistors have different heights and the method further comprising adjusting the heights to adjust N/P ratio.
7. The method as recited in claim 1 , wherein relaxing strain in the undoped silicon layer includes relaxing strain by at least 50%.
8. The method as recited in claim 1 , wherein converting the doped portion to a porous silicon to form a relaxed silicon layer includes anodizing the doped portion.