Tunneling field effect transistor
Devices and methods for forming a device are disclosed. A substrate is provided. A plurality of fin structures are formed in the substrate. The fin structures include an upper part and a lower part. An isolation layer is formed on the substrate. The lower part of the plurality of fin structures is embedded in the isolation layer. A source including a first source portion and a second source portion is formed in a first side of the substrate. The first source portion partially occupies the fin structures along a length direction. The second source portion is formed over the first source portion. The second source portion elevates the fin structures. A drain is formed in a second side of the substrate. A distance between the source to the drain defines a channel region. A gate having a gate dielectric and a metal gate electrode is formed over the substrate. The gate wraps around the elevated fin structures and channel region.
1. A method for forming a device comprising: providing a substrate; patterning the substrate to form a primary fin structure of a transistor having a fin height Hf, the primary fin structure comprises first and second end portions separated by a middle portion along a channel width direction, the middle portion comprises a plurality of slots which create secondary fin structures coupling the first and second end portions; forming a source in the first end portion of the primary fin structure; forming a drain in the second end portion of the primary fin structure, where a distance between the source to the drain defines a channel; and forming a gate over the substrate, wherein the gate wraps around the middle portion of the primary fin structure and channel; wherein the source comprises a first polarity type source; the drain comprises a second polarity type drain; and the transistor comprises a tunneling field effect transistor.
2. The method of claim 1 wherein forming the gate comprises forming a gate dielectric and a gate electrode over the gate dielectric.
3. The method of claim 1 wherein forming the source forms an extended source which extends into the middle portion of the primary fin structure under the gate.
4. The method of claim 3 wherein forming the source comprises forming a source epitaxial layer over the primary fin structure of the source.
5. The method of claim 4 wherein:
the source of the primary fin structure comprises first polarity type dopants; and
the source epitaxial layer comprises second polarity type dopants.
6. The method of claim 1 comprises forming an isolation on the substrate, wherein the isolation comprises a dielectric which fills gaps in the substrate created by the primary and secondary fin structures, wherein the isolation has an isolation height H I which is less than H F , creating upper and lower portions of the fin structure delineated H I .
7. The method of claim 1 wherein the channel of the transistor is disposed in the primary fin structure between the source and drain under the gate.
8. The method of claim 1 wherein forming the source comprises forming a source epitaxial layer over the primary fin structure of the source.
9. The method of claim 8 wherein:
the source of the primary fin structure comprises first polarity type dopants; and
the source epitaxial layer comprises second polarity type dopants.
10. The method of claim 9 wherein the drain comprises second polarity type dopants.
11. The method of claim 1 wherein forming the source comprises forming the source prior to forming the gate.
12. The method of claim 11 wherein forming the drain comprises forming the drain after forming the gate.
13. A method for forming a device comprising: providing a substrate; patterning the substrate to form a primary fin structure of a transistor having a fin height Hf, the primary fin structure comprises first and second end portions separated by a middle portion along a channel width direction, the middle portion comprises a plurality of slots which create secondary fin structures coupling the first and second end portions: forming an isolation on the substrate, wherein the isolation comprises a dielectric which fills gaps in the substrate created by the primary and secondary fin structures, wherein the isolation has an isolation height Hi which is less than Hf, creating upper and lower portions of the fin structure delineated Hi; forming a source in the first end portion of the primary fin structure: forming a drain in the second end portion of the primary fin structure; and forming a gate over the substrate, wherein the gate is disposed on the middle portion of the primary fin structure and wraps around the secondary fin structures; wherein the source comprises a first polarity type source; the drain comprises a second polarity type drain; and the transistor comprises a tunneling field effect transistor.
14. The method of claim 13 wherein forming the source forms an extended source which extends into the middle portion of the primary fin structure under the gate.
15. The method of claim 14 wherein:
the source of the primary fin structure comprises first polarity type dopants; and
the source epitaxial layer comprises second polarity type dopants.
16. The method of claim 15 wherein the drain comprises second polarity type dopants.
17. The method of claim 13 wherein forming the source comprises forming a source epitaxial layer over the primary fin structure of the source.
18. A method for forming a device comprising: providing a substrate; patterning the substrate to form a primary fin structure of a transistor having a fin height Hf, the primary fin structure comprises first and second end portions separated by a middle portion along a channel width direction, the middle portion comprises a plurality of slots which create secondary fin structures coupling the first and second end portions: forming a source in the first end portion of the primary fin structure: and forming a drain in the second end portion of the primary fin structure; wherein the source comprises a first polarity type source; the drain comprises a second polarity type drain; and the transistor comprises a tunneling field effect transistor.