Junction region between two waveguides and associated method of production
A photonic integrated device includes a first waveguide and a second waveguide. The first and second waveguides are mutually coupled at a junction region the includes a bulge region.
1. A photonic integrated device, comprising:
a semiconductor substrate comprising a first lateral area, a second lateral area, a central area, a first intermediate area that is located between the first lateral area and the central area, and a second intermediate area that is located between the second lateral area and the central area,
a first waveguide comprising a portion in the first lateral area, and
a second waveguide comprising a portion in the second lateral area,
wherein the first and second waveguides are mutually coupled by a junction region comprising a central junction region that is located in the central area, a first intermediate junction region and a second intermediate junction region extending, respectively, into the first and second intermediate areas while gradually widening in order to meet the central junction region so as to form a bulge, and
wherein the first waveguide comprises a first part produced on a second part that is wider than the first part, and
wherein the junction region comprises a portion of said second part that extends from the first lateral area into the first intermediate area and into a part of the central area while gradually narrowing until reaching a width of the central junction region.
2. The device according to claim 1 , wherein the second waveguide comprises a third part produced on a fourth part that is wider than the third part thereof and the junction region additionally comprises a portion of said fourth part that extends from the second lateral area into the second intermediate area and into a part of the central area while gradually narrowing until reaching the width of the central junction region.
3. The device according to claim 1 , wherein lengths of the first intermediate area and of the second intermediate area are different.
4. The device according to claim 1 , wherein a total length of the junction region is less than or equal to thirty-five micrometers.
5. A system comprising a photonic integrated device, wherein the photonic integrated device comprises:
a semiconductor substrate comprising a first lateral area, a second lateral area, a central area, a first intermediate area that is located between the first lateral area and the central area, and a second intermediate area that is located between the second lateral area and the central area,
a first waveguide comprising a portion in the first lateral area, and
a second waveguide comprising a portion in the second lateral area,
wherein the first and second waveguides are mutually coupled by a junction region comprising a central junction region that is located in the central area, a first intermediate junction region and a second intermediate junction region extending, respectively, into the first and second intermediate areas while gradually widening in order to meet the central junction region so as to form a bulge, and
wherein the first waveguide comprises a first part produced on a second part that is wider than the first part, and
wherein the junction region comprises a portion of said second part that extends from the first lateral area into the first intermediate area and into a part of the central area while gradually narrowing until reaching a width of the central junction region.
6. The system according to claim 5 , wherein the system is an optical transceiver.
7. The system according to claim 5 , wherein the second waveguide comprises a third part produced on a fourth part that is wider than the third part thereof and the junction region additionally comprises a portion of said fourth part that extends from the second lateral area into the second intermediate area and into a part of the central area while gradually narrowing until reaching the width of the central junction region.
8. The system according to claim 5 , wherein lengths of the first intermediate area and of the second intermediate area are different.
9. The system according to claim 5 , wherein a total length of the junction region is less than or equal to thirty-five micrometers.