Active and passive components with deep trench isolation structures
The present disclosure relates to semiconductor structures and, more particularly, to active and passive radio frequency (RF) components with deep trench isolation structures and methods of manufacture. The structure includes a bulk high resistivity wafer with a deep trench isolation structure having a depth deeper than a maximum depletion depth at worst case voltage bias difference between devices which are formed on the bulk high resistivity wafer.
1. A structure comprising a bulk high resistivity wafer with a deep trench isolation structure having a depth deeper than a maximum depletion depth at worst case voltage bias difference between devices which are formed on the bulk high resistivity wafer and separated by a shallow trench isolation structure, wherein the deep trench isolation structure is formed through the shallow trench isolation structure and extends below a depletion region of the bulk high resistivity wafer,
wherein the bulk high resistivity wafer includes a triple well region of a first dopant type, a well region of a second dopant type formed in the triple well region, and the deep trench isolation structure is formed though at least the triple well region and extends below the triple well region and the well region, to below a depletion region of the bulk high resistivity wafer.
2. The structure of claim 1 , wherein the bulk high resistivity wafer is a bulk Si wafer with a resistivity of about 1 Kohm-cm to greater than 10 Kohm-cm.
3. The structure of claim 1 , wherein the devices are active devices.
4. The structure of claim 3 , wherein the bulk high resistivity wafer includes triple well regions and well regions in the triple well regions, and the deep trench isolation structure is formed through and extends below the triple well regions to prevent triple well to substrate depletion regions from merging and isolate adjacent the triple well regions and p-well regions.
5. The structure of claim 3 , wherein the active devices are radio frequency switches.
6. The structure of claim 1 , wherein the deep trench isolation structure surrounds each of the devices.
7. The structure of claim 1 , wherein the bulk high resistivity wafer includes well regions, and the deep trench isolation structure is formed through and below at least one of the well regions.
8. The structure of claim 1 , wherein the deep trench isolation structure is formed to a backside grind interface of the bulk high resistivity wafer to completely isolate the well regions and active devices from DC substrate currents.
9. The structure of claim 1 , wherein the deep trench isolation structure is composed of insulator material and lined sidewalls.
10. The structure of claim 1 , wherein the deep trench isolation structure is composed of insulator material and an airgap.
11. The structure of claim 10 , wherein the deep trench isolation structure extends to a backside grind interface of the bulk high resistivity wafer.
12. The structure of claim 11 , wherein the bulk high resistivity wafer is a bulk Si wafer with a resistivity of about 20 Kohm-cm.
13. The structure of claim 12 , wherein the first dopant type is an n-type dopant and the second dopant type is a p-type dopant.
14. A structure comprising:
a bulk wafer having at least one well region;
a plurality of radio frequency (RF) devices formed on the bulk wafer over the at least one well region;
at least one shallow trench isolation structure between the plurality of RF devices;
a barrier layer formed over the at least one shallow trench isolation structure; and
a deep trench isolation structure formed through the barrier layer and the at least one shallow trench isolation structure and extending within the bulk wafer below and through the at least one well region and structured to prevent coupling between device depletion regions of the plurality of RF devices,
wherein the bulk high resistivity wafer is a Si wafer which includes a triple well region of a first dopant type, a well region of a second dopant type formed in the triple well region, and the deep trench isolation structure is formed though at least the triple well region and extends below the triple well region and the well region, and below a depletion region of the Si wafer.
15. The structure of claim 14 , wherein the at least one well region is a well region formed in a triple well region.
16. The structure of claim 14 , wherein the bulk wafer is a semiconductor bulk wafer with resistivity of about 1 Kohm-cm to greater than 10 Kohm-cm.
17. The structure of claim 14 , wherein the deep trench isolation structure surrounds each of the plurality of RF devices.
18. The structure of claim 14 , wherein the deep trench isolation structure extends below a depletion region of the bulk wafer.
19. The structure of claim 14 , wherein the deep trench isolation structure is formed to a backside grind interface of the bulk substrate to completely isolate adjacent well regions and the RF devices from DC substrate currents.
20. The structure of claim 14 , wherein the deep trench isolation structure is composed of insulator material and an airgap.