Pressure sensor

1. A pressure sensor comprising:

a substrate;

a first housing defining a gas-filled interior cavity arranged on the substrate;

an elastic sealing element attached to a first end of the first housing and generally covering an open end of the interior cavity for sealing the interior cavity with respect to an external environment, wherein a portion of the elastic sealing element is configured to be moveable in response to a pressure acting thereon; and

a semiconductor die arranged on the substrate and defining a pressure sensing diaphragm exposed to the gas occupying the interior cavity.

2. The pressure sensor of claim 1 , wherein the interior cavity includes:

a first cavity space defined in the first end of the first housing;

a second cavity space defined in a second end of the first housing; and

an aperture defined in the first housing for providing fluid communication between the first cavity space and the second cavity space,

wherein the semiconductor die is arranged within the second cavity space.

3. The pressure sensor of claim 2 , wherein at least a portion of the first housing is arranged between the moveable portion of the elastic sealing element and the second cavity space.

4. The pressure sensor of claim 3 , wherein the first and second cavity spaces and the aperture are occupied by an enclosed volume of gas.

5. The pressure sensor of claim 1 , wherein the elastic sealing element is configured to transmit a force acting on a surface thereof to the pressure sensing diaphragm.

6. The pressure sensor of claim 1 , further comprising an application specific integrated circuit (ASIC) arranged on the substrate, wherein the ASIC is configured to generate an output electrical signal indicative of a detected pressure fluctuation by the pressure sensing diaphragm of the semiconductor die corresponding to a heart beat rate.

7. The pressure sensor of claim 1 , wherein the elastic sealing element comprises a protrusion extending from an exposed side thereof in a direction away from the interior cavity.

8. The pressure sensor of claim 1 , wherein the first housing is arranged on a first surface of the substrate, and wherein the pressure sensor further comprises a second housing arranged on a second surface of the substrate, opposite the first surface, the second housing defining a second interior cavity.

9. The pressure sensor of claim 8 , wherein the semiconductor die is arranged on the second surface of the substrate and within the second interior cavity of the second housing, and wherein the pressure sensing diaphragm of the semiconductor die is in fluid communication with the interior cavity via an aperture formed through the substrate.

10. The pressure sensor of claim 9 , wherein at least a portion of the substrate is arranged between the moveable portion of the elastic sealing element and the pressure sensing diaphragm of the semiconductor die.

11. The pressure sensor of claim 9 , wherein the interior cavity and the aperture are occupied by an enclosed volume of gas.

12. The pressure sensor of claim 9 , further comprising an application specific integrated circuit (ASIC) arranged on the second surface of the substrate and within the second interior cavity defined by the second housing.

13. The pressure sensor of claim 1 , wherein the first housing comprises one of a polymer housing and a metallic housing.

14. The pressure sensor of claim 1 , wherein the elastic sealing element comprises an arcuate portion that protrudes in a direction away from interior cavity in an unbiased state.