IP Library Granted Patent US 10,035,706
Granted Patent B2
US 10,035,706 · App. 15/374,794 · Granted Jul 31, 2018

Systems and methods for growth of nanostructures on substrates, including substrates comprising fibers

Inventors: Stephen A. Steiner, III (Boston, MA); Brian L. Wardle (Lexington, MA); Richard Li (West Windsor, NJ)
Assignee: Massachusetts Institute of Technology
C01B31/0226C23C16/22C23C16/44D01F9/127D06M11/45D06M11/79D06M15/233B82Y30/00B82Y40/00C01B2202/08D06M2101/40Y10S977/742Y10S977/843
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Quick Facts
Patent No.
US 10,035,706
App. No.
15/374,794
Granted
Jul 31, 2018
Kind
B2
Abstract

Systems and methods for the formation of nanostructures, including carbon-based nanostructures, are generally described. In certain embodiments, substrate configurations and associated methods are described.

Claims (32)

1. A method of growing carbon-based nanostructures, comprising:

exposing a carbon-based nanostructure precursor to a nanopositor under conditions causing the formation of carbon-based nanostructures on the nanopositor, wherein the nanopositor is associated with an intermediate material that is non-covalently associated with a carbon fiber, wherein:

the intermediate material is positioned between the carbon fiber and the nanopositor,

the intermediate material covers at least a portion of an exposed surface of the carbon fiber, and

the intermediate material comprises a polymer.

2. A method as in claim 1 , wherein the nanopositor is in direct contact with the intermediate material.

3. A method as in claim 1 , wherein the intermediate material comprises a functional group capable of participating in a pi-pi interaction with the carbon fiber.

4. A method as in claim 1 , wherein the intermediate material comprises an aromatic group.

5. A method as in claim 4 , wherein the intermediate material comprises a phenyl group.

6. A method as in claim 1 , wherein the intermediate material comprises poly(styrene-alt-[maleic acid]).

7. A method as in claim 1 , wherein the intermediate material is present as a coating over the carbon fiber.

8. A method as in claim 7 , wherein the intermediate material is present as a substantially conformal coating over the carbon fiber.

9. A method as in claim 7 , wherein the intermediate material is present as a surface layer over the carbon fiber.

10. A method as in claim 7 , wherein the intermediate material is present as a monolayer over the carbon fiber.

11. The method of claim 1 , wherein the intermediate material comprises a polyelectrolyte polymer.

12. The method of claim 1 , wherein the carbon-based nanostructures comprise carbon nanotubes, carbon nanowires, carbon nanofibers, carbon nanoshells, graphene, and/or fullerenes.

13. The method of claim 1 , wherein the carbon-based nanostructures comprise carbon nanotubes.

14. A method of growing carbon-based nanostructures, comprising:

exposing a carbon-based nanostructure precursor to a nanopositor under conditions causing the formation of carbon-based nanostructures on the nanopositor,

wherein:

the nanopositor is positioned over an intermediate material that is positioned over a carbon fiber,

the intermediate material comprises a polymer, and

the tensile strength of the carbon fiber, after growth of the carbon-based nanostructures, is reduced by less than about 20% relative to the tensile strength of the carbon fiber prior to growth of the nanostructures.

15. The method of claim 14 , wherein the tensile strength of the carbon fiber, after growth of the carbon-based nanostructures, is reduced by less than about 5% relative to the tensile strength of the carbon fiber prior to growth of the nanostructures.

16. The method of claim 14 , wherein the tensile strength of the carbon fiber, after growth of the carbon-based nanostructures, is reduced by less than about 1% relative to the tensile strength of the carbon fiber prior to growth of the nanostructures.

17. The method of claim 14 , comprising:

thermally processing the carbon fiber in the presence of a reducing agent at a first temperature, and

forming the carbon-based nanostructures via chemical vapor deposition at a second temperature that is below the first temperature.

18. The method of claim 17 , wherein the second temperature is below about 600° C.

19. The method of claim 14 , wherein the intermediate material comprises a polyelectrolyte polymer.

20. The method of claim 14 , wherein the carbon-based nanostructures comprise carbon nanotubes, carbon nanowires, carbon nanofibers, carbon nanoshells, graphene, and/or fullerenes.

21. The method of claim 14 , wherein the carbon-based nanostructures comprise carbon nanotubes.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 21, 2017
From: STEINER, STEPHEN A., III; WARDLE, BRIAN L.; LI, RICHARD
To: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Reel/Frame 041659/0031 →
Continuity (4)
Continuation 14216487 · Mar 17, 2014
Division 13408984 · Feb 29, 2012
Provisional Application 61537538 · Sep 21, 2011
Related Publication 20170183232A1 · Jun 29, 2017