Semiconductor device and display device including the same
A semiconductor device with reduced power consumption and a display device including the semiconductor are provided. The semiconductor device generates a bias voltage that is to be supplied to a buffer amplifier. When the display device displays a still image, a data signal for updating the image need not be supplied from the buffer amplifier to a pixel array in the next frame; therefore, the circuit is configured so that the buffer amplifier is brought into a standby state (temporarily stopped). Specifically, input of a reference current from a BGR circuit to the semiconductor is stopped and a bias voltage is applied from the semiconductor device to the buffer amplifier to temporarily stop the operation of the buffer amplifier.
1. A semiconductor device comprising:
a first circuit comprising a first input terminal;
a second circuit comprising a second input terminal, a first output terminal, and a second output terminal;
a third circuit electrically connected to the first circuit and the second circuit;
a fourth circuit electrically connected to the first output terminal; and
a fifth circuit electrically connected to the second output terminal,
wherein when the semiconductor device is in a driving state, the first circuit is configured to apply a first potential to the second input terminal in accordance with a second potential input to the first input terminal,
wherein when the semiconductor device is in the driving state, the second circuit is configured to output a first bias voltage from the first output terminal and a second bias voltage from the second output terminal, and
wherein when the semiconductor device in a standby state, the third circuit is configured to apply a first low-level potential to the first circuit and the second circuit, the fourth circuit is configured to output a high-level potential to the first output terminal, and the fifth circuit is configured to output a second low-level potential to the second output terminal.
2. The semiconductor device according to claim 1 ,
wherein the first circuit comprises a transistor,
wherein a gate of the transistor and a first terminal of the transistor are electrically connected to the first input terminal, and
wherein a second terminal of the transistor is electrically connected to a wiring for supplying a low-level potential.
3. The semiconductor device according to claim 1 , wherein the second circuit comprises a p-channel transistor and an n-channel transistor which are electrically connected in series.
4. The semiconductor device according to claim 1 ,
wherein the third circuit comprises a transistor,
wherein a first terminal of the transistor is electrically connected to the first circuit and the second circuit, and
wherein a second terminal of the transistor is electrically connected to a wiring for supplying a low-level potential.
5. The semiconductor device according to claim 1 ,
wherein the fourth circuit comprises a transistor,
wherein a first terminal of the transistor is electrically connected to the first output terminal, and
wherein a second terminal of the transistor is electrically connected to a wiring for supplying a high-level potential.
6. The semiconductor device according to claim 1 ,
wherein the fifth circuit comprises a transistor,
wherein a first terminal of the transistor is electrically connected to the second output terminal, and
wherein a second terminal of the transistor is electrically connected to a wiring for supplying a low-level potential.
7. The semiconductor device according to claim 1 ,
wherein each of the third circuit, the fourth circuit, and the fifth circuit comprises a transistor,
wherein a gate of the transistor of each of the third circuit and the fifth circuit is electrically connected to a wiring for supplying a standby signal, and
wherein a gate of the transistor of the fourth circuit is electrically connected to a wiring for supplying for an inversion signal of the standby signal.
8. The semiconductor device according to claim 1 , wherein each of the first circuit, the second circuit, the third circuit, and the fifth circuit comprises a transistor whose channel formation region comprises an oxide semiconductor.
9. The semiconductor device according to claim 1 , wherein each of the third circuit and the fifth circuit comprises a transistor comprising a back gate.
10. The semiconductor device according to claim 1 , wherein the semiconductor device is a bias generator.
11. A display device comprising:
a driving circuit including the semiconductor device according to claim 1 ; and
a display portion.
12. An electronic device comprising the display device according to claim 11 .
13. A semiconductor device comprising:
a first circuit comprising an input terminal;
a second circuit comprising first to (2k)th output terminals;
a third circuit electrically connected to first to kth wirings;
a fourth circuit electrically connected to the first to kth output terminals; and
a fifth circuit electrically connected to the (k+1)th to (2k)th output terminals,
wherein when the semiconductor device is in a driving state, the first circuit is configured to apply first to kth potentials to the first to kth wirings, respectively, in accordance with a potential input to the input terminal,
wherein when the semiconductor device is in the driving state, the second circuit is configured to output (k+1)th to (3k)th potentials from the first to (2k)th output terminals, respectively, in accordance with the first to kth potentials input from the first to kth wirings,
wherein when the semiconductor device in a standby state, the third circuit is configured to apply a first low-level potential to the first to kth wirings, the fourth circuit is configured to output a high-level potential to the first to kth output terminals, and the fifth circuit is configured to output a second low-level potential to the (k+1)th to (2k)th output terminals,
wherein k is an integer of 2 or more, and
wherein h is an integer of 1 to k.
14. The semiconductor device according to claim 13 ,
wherein the first circuit comprises first to kth transistors,
wherein a first terminal of the first transistor is electrically connected to the input terminal,
wherein a first terminal of the hth transistor is electrically connected to a gate of the hth transistor,
wherein the first terminal of the hth transistor is electrically connected to the hth wiring,
wherein a second terminal of the gth transistor is electrically connected to a first terminal of the (g+1)th transistor, and
wherein g is an integer of 1 to (k−1).
15. The semiconductor device according to claim 13 ,
wherein a total number of (4k+1)th transistors included in the second circuit is (4k 2 ), and
wherein the (4k+1)th transistors are arranged in (2k) rows and (2k) columns of the second circuit.
16. The semiconductor device according to claim 13 ,
wherein the third circuit comprises (k+1)th to (2k)th transistors,
wherein a first terminal of the (k+h) transistor is electrically connected to the hth wiring, and
wherein gates of the (k+1)th to (2k)th transistors are electrically connected to each other.
17. The semiconductor device according to claim 13 ,
wherein the fourth circuit comprises (2k+1)th to (3k)th transistors,
wherein a first terminal of the (2k+h)th transistor is electrically connected to the hth output terminal, and
wherein gates of the (2k+1)th to (3k)th transistors are electrically connected to each other.
18. The semiconductor device according to claim 13 ,
wherein the fifth circuit comprises (3k+1)th to (4k)th transistors,
wherein a first terminal of the (3k+h)th transistor is electrically connected to the (k+h)th output terminal, and
wherein gates of the (3k+1)th to (4k)th transistors are electrically connected to each other.
19. A display device comprising:
a driving circuit including the semiconductor device according to claim 13 ; and
a display portion.
20. An electronic device comprising the display device according to claim 19 .