Microelectronic device having an air core inductor
A microelectronic device incorporating an air core inductor having one or more inserts to provide efficiency of the inductor are described. One or more inserts having a selected permeability may be placed within regions defined by coils of the air core inductor. The inserts can be formed of a solid material of the selected permeability or such a material can be applied to other structures, such as circuit components. Other embodiments may be described and/or claimed.
1. A microelectronic device, comprising
a substrate;
an air core inductor supported by the substrate, the air core inductor includes a first coil extending around a first central region and a second coil extending around a second central region; and
at least one insert in at least one of the first and second central regions, the insert having a relative permeability of 2 or greater;
wherein dielectric material extends into at least one of the first and second central regions, and wherein the at least one insert is placed within a trench in the dielectric material in the at least one of the first and second central regions.
2. The microelectronic device of claim 1 , further comprising a semiconductor die coupled to a first side of the substrate.
3. The microelectronic device of claim 1 , wherein each of the first and second central regions includes at least one insert having a relative permeability of 2 or greater.
4. A microelectronic device, comprising
a substrate;
an air core inductor supported by the substrate, the air core inductor includes a first coil extending around a first central region and a second coil extending around a second central region; and
at least one insert in at least one of the first and second central regions, the insert having a relative permeability of 2 or greater;
wherein the air core inductor further comprises a shorting bar extending between the first and second multilayer coils.
5. The microelectronic device of claim 1 , wherein the at least one insert comprises a plurality of inserts within the dielectric material in at least one of the first and second central regions.
6. The microelectronic device of claim 1 , wherein at least one insert is a solid material having a permeability of at least 1.0×10 −5 henries per meter.
7. The microelectronic device of claim 6 , wherein the at least one insert comprises at least one of a ferrite material and an iron composite material.
8. A microelectronic device, comprising
a substrate;
an air core inductor supported by the substrate, the air core inductor includes a first coil extending around a first central region and a second coil extending around a second central region; and
at least one insert in at least one of the first and second central regions, the insert having a relative permeability of 2 or greater;
wherein the at least one insert comprises a dielectric ceramic ferrite material including at least one of barium ferrite, strontium ferrite, a manganese-zinc ferrite, and a nickel-zinc ferrite.
9. The microelectronic device of claim 6 , wherein the solid material comprises ferrite nanoparticles.
10. A microelectronic device, comprising:
a substrate;
an air core inductor supported by the substrate, the air core inductor includes a first coil extending around a first central region and a second coil extending around a second central region; and
at least one insert in at least one of the first and second central regions, the insert having a relative permeability of 2 or greater;
wherein at least one insert comprises an electrical component.
11. The microelectronic device of claim 10 , wherein the electrical component is a passive electrical component that is coated with at least one of a ferrite material and an iron composite material.
12. A method of making a microelectronic device, comprising:
forming an air core inductor on a substrate, the air core inductor defining a first coil extending around a first central region and a second coil extending around a second central region, wherein dielectric material extends into each of the first and second central regions; and
placing an insert in respective recesses in the dielectric material in each of the first and second central regions, the inserts having a relative permeability of 2 or greater.
13. The method of claim 12 , wherein the forming of an air core inductor on the substrate comprises forming a plurality of planar metallization layers separated by dielectric material, wherein each of the planar metallization layers defines a respective layer of each of the first and second multilayer coils, and wherein the planar layers of each coil are successively coupled through vertical interconnects to form the first and second multilayer coils.
14. The method of claim 12 , further comprising coupling a semiconductor die to the die-receiving surface of the substrate with a first contact on the die receiving surface of the substrate coupled to a power supply input node on the semiconductor die, wherein the first contact is electrically coupled to a node of the air core inductor.
15. The method of claim 12 , wherein the air core inductor is formed as an integral structure of the substrate.
16. The method of claim 12 , wherein placing at least one of the first and second inserts comprises sputtering a high permeability material into at least one of the first and second central regions.
17. The method of claim 12 , wherein at least one insert is a solid material having a permeability of at least 1.0×10 −5 henries per meter.
18. The method of claim 17 , wherein the at least one insert comprises at least one of a ferrite material and an iron composite material.
19. A method of making a microelectronic device, comprising:
forming an air core inductor on a substrate, the air core inductor defining a first coil extending around a first central region and a second coil extending around a second central region; and
placing an insert in each of the first and second central regions, the inserts having a relative permeability of 2 or greater;
wherein the at least one insert comprises a dielectric ceramic ferrite material including at least one of barium ferrite, strontium ferrite, a manganese-zinc ferrite, and a nickel-zinc ferrite.
20. The method of claim 12 , wherein at least one insert comprises an electrical component.
21. An electronic system, comprising:
a microelectronic device, comprising,
a semiconductor die;
a substrate coupled to the semiconductor die, the substrate including,
an air core inductor supported by the substrate, the air core inductor including a first coil extending around a first central region and a second coil extending around a second central region wherein dielectric material extends into at least one of the first and second central regions; and
at least one insert in at least one of the first and second central regions, the insert having a relative permeability of 2 or greater, wherein the at least one insert is placed within a recess in the dielectric material in the at least one of the first and second central regions; and
at least one of a mass storage device and a network interface operably coupled to the microelectronic device.
22. The electronic system of claim 21 , wherein at least one insert is a solid material having a permeability of at least 1.0×10 −5 henries per meter.
23. The electronic system of claim 21 , wherein the at least one insert comprises a ferrite material including at least one of barium ferrite, strontium ferrite, a manganese-zinc ferrite, and a nickel-zinc ferrite.