Apparatus and methods for spectroscopy and broadband light emission using two-dimensional plasmon fields
Ultra-thin conductors are employed to generate plasmon fields near the surface of the conductors. Emitters, such as atoms, molecules, quantum dots, or quantum wells, in the plasmon fields can emit and absorb light via transitions that are otherwise forbidden in the absence of the plasmon fields. Applications using these forbidden transitions include spectroscopy, organic light sources, and broadband light generation. For example, in a spectroscopic platform, an emitter is disposed in the plasmon fields to excite electronic transitions that are otherwise unexcitable. In organic light sources, plasmon fields quench excited triplet states, allowing fast singlet decay with the emission of light. In broadband light generation, strong two-plasmon spontaneous emission of emitters near ultrathin conductors is employed to produce a broad spectrum of light.
1. An apparatus comprising:
a conductive layer having a thickness less than 10 nm;
a radiation source, in radiative communication with the conductive layer, to emit an excitation beam into the conductive layer, the excitation beam generating a two-dimensional (2D) plasmon field near a surface of the conductive layer;
a light source, in optical communication with the conductive layer, to illuminate a sample in the 2D plasmon field with a probe beam, the sample absorbing at least one spectral component of the probe beam; and
a detector, in optical communication with the light source, to detect absorption of the at least one spectral component by the sample,
wherein the sample absorbs at least a portion of the 2D plasmon field via a transition forbidden in an absence of the 2D plasmon field.
2. The apparatus of claim 1 , wherein the conductive layer comprises a 2D conductor.
3. The apparatus of claim 1 , wherein the conductive layer comprises graphene.
4. The apparatus of claim 1 , wherein the conductive layer comprises at least one of silver, gold, or DySi 2 , and the apparatus further comprises a substrate, disposed below the conductive layer, to support the conductive layer, the substrate comprising at least one of Si, Si 3 N 4 , or SiO 2 .
5. The apparatus of claim 1 , wherein the radiation source comprises an optical radiation source and the excitation beam comprises a light beam.
6. The apparatus of claim 5 , wherein the conductive layer comprises a grating.
7. The apparatus of claim 6 , wherein the grating has a period of about 5 nm to about 20 nm.
8. The apparatus of claim 5 , further comprising:
a conductive tip, disposed at a distance less than 30 nm away from the surface of the conductive layer, to generate the 2D plasmon field.
9. The apparatus of claim 1 , further comprising:
a spacer layer, disposed on the conductive layer, to hold the sample, the spacer layer having a thickness less than 10 nm.
10. The apparatus of claim 1 , wherein the sample comprises a gaseous sample, the apparatus further comprising:
a chamber to receive the gaseous sample.
11. A method comprising:
generating a two-dimensional (2D) plasmon field near a surface of a conductive layer having a thickness less than 5 nm;
disposing a sample within the 2D plasmon field, the sample absorbing at least a portion of the 2D plasmon field via a transition forbidden in an absence of the 2D plasmon field;
illuminating the 2D plasmon field with a probe beam, the sample absorbing at least one spectral component in the probe beam; and
detecting the absorption of the at least one spectral component.
12. The method of claim 11 , wherein generating the 2D plasmon field comprises coupling a light beam into the conductive layer via a grating fabricated in the conductive layer, the grating having a period of about 5 nm to about 20 nm.
13. The method of claim 11 , wherein generating the 2D plasmon field comprises irradiating a conductive tip, disposed at a distance less than 10 nm away from the surface of the conductive layer, to excite the 2D plasmon field.
14. The method of claim 11 , wherein disposing the sample into the 2D plasmon field comprises disposing the sample onto a spacer layer disposed on the conductive layer, the spacer layer having a thickness less than 10 nm.
15. The method of claim 11 , wherein disposing the sample into the 2D plasmon field comprises flowing the sample in a gaseous state to a chamber containing the conductive layer.