Avalanche photodiode receiver
A method of detecting an optical signal, comprising the steps of: providing an avalanche photodiode (APD) comprising a multiplication region capable of amplifying an electric current, said multiplication region, in operation, having a first ionization rate for electrons and a second ionization rate for holes, wherein said first ionization rate is different in magnitude from said second ionization rate, and exposure to the optical signal causes an impulse response; exposing the APD to a modulating optical signal; providing an external circuit that induces an APD bias to the multiplication region; providing an external circuit for amplifying and processing an electric signal from the avalanche photodiode; and modulating the APD bias in a manner that is correlated with the optical signal.
1. A method of detecting an optical signal, comprising the steps of
providing an avalanche photodiode (APD) comprising a detection region, capable of detecting an optical signal and converting it to an electronic signal, a multiplication region capable of amplifying an electric current, said multiplication region, in operation, having a first ionization rate for electrons and a second ionization rate for holes, wherein said first ionization rate is different in magnitude from said second ionization rate, and exposure to the optical signal causes an impulse response;
exposing the APD to a modulating optical signal;
providing an external circuit that induces an APD bias to the multiplication region;
modulating the APD bias in a manner that is correlated with the optical signal; and
providing a circuit for amplifying and processing an electric signal from the avalanche photodiode, and outputting an output electric signal.
2. The method of claim 1 , wherein the APD bias frequency and the optical signal frequency are matched.
3. The method of claim 1 , wherein the APD bias modulation frequency is at a higher rate than the optical signal frequency.
4. The method of claim 1 , wherein the circuit's amplifier bandwidth is at a higher frequency than the bias modulation.
5. The method of claim 1 , wherein the optical signal frequency is determined by changing the APD bias modulation frequency and using a correlation process in the circuit to process the electronic signal.
6. The method of claim 5 , wherein the circuit includes a matched filter.
7. The method of claim 1 , wherein the APD bias modulation phase is altered to increase the correlation of the electrical signal and the optical input signal.
8. The method of claim 1 , wherein a pulse detection circuit is included in the circuit.
9. The method of claim 1 , wherein the bias waveform is modulated at voltages no less than the avalanche photodiode's punch-through bias.
10. The method of claim 1 , wherein the bias waveform is modulated to voltages both greater than and less than the avalanche photodiode's breakdown voltage.
11. The method of claim 1 , wherein the bias modulation waveform is sinusoidal.
12. The method of claim 1 , wherein the optical signal is a binary communications signal.
13. The method of claim 1 , wherein the optical signal is modulated at a rate greater than 1 GHz.
14. The method of claim 1 , wherein the bias is modulated at a rate greater than 1 GHz.
15. The method of claim 1 , wherein the optical signal is amplitude-shift key (ASK) modulated.
16. The method of claim 1 , wherein the optical signal is On-off key (OOK) modulated.
17. The method of claim 11 , wherein the bias is modulated to reduce inter symbol interference.
18. The method of claim 1 , wherein the bias modulated is varied to decrease the bit error rate (BER).
19. The method of claim 1 , wherein the external circuit includes a clock/data recovery (CDR).
20. The method of claim 1 , wherein the modulated bias waveform has more than one frequency component.
21. The method of claim 1 , wherein the circuit includes a common mode reject circuit to reduce the effectives of capacitive current injection caused by the bias modulation.