IP Library Granted Patent US 10,355,195
Granted Patent B2
US 10,355,195 · App. 15/381,397 · Granted Jul 16, 2019

Acoustic resonator and method of manufacturing the same

Inventors: Dae Ho Kim (Suwon-si, KR); Dae Hun Jeong (Suwon-si, KR); Won Han (Suwon-si, KR); Sang Uk Son (Suwon-si, KR)
Assignee: Samsung Electro-Mechanics Co., Ltd.
H01L41/053H01L41/0471H01L41/27H01L41/297H03H9/174
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Quick Facts
Patent No.
US 10,355,195
App. No.
15/381,397
Granted
Jul 16, 2019
Kind
B2
Abstract

An acoustic resonator includes: a substrate; a resonance part including a lower electrode, a piezoelectric layer, and an upper electrode sequentially stacked on the substrate, and a frame formed on the upper electrode along an edge of the upper electrode; and a trench part formed in at least one side of the resonance part and making a thickness of the resonance part asymmetrical.

Claims (41)

1. An acoustic resonator comprising:

a substrate;

a resonance part comprising

a lower electrode, a piezoelectric layer, and an upper electrode sequentially stacked on the substrate, and

a frame formed on the upper electrode along an edge of the upper electrode; and

a trench part formed in the resonance part, along only two sides of the upper electrode, and forming a thickness of the resonance part to be asymmetrical.

2. The acoustic resonator of claim 1 , wherein the trench part is formed in a shape of a groove in the upper electrode.

3. The acoustic resonator of claim 2 , wherein:

the upper electrode is formed in a quadrangular shape, and

the trench part is disposed parallel to the two sides of the upper electrode.

4. The acoustic resonator of claim 3 , wherein the trench part is disposed continuously along the two sides of the upper electrode.

5. The acoustic resonator of claim 4 , wherein a portion of the trench part disposed along one of the two sides and a portion of the trench part disposed along another of the two sides have different widths.

6. The acoustic resonator of claim 1 , wherein the trench part is formed as a linear groove along an inner wall of the frame.

7. The acoustic resonator of claim 1 , wherein a width of the trench part is greater than a depth of the trench part.

8. The acoustic resonator of claim 1 , wherein the trench part is formed at different depths depending on a position of the trench part.

9. The acoustic resonator of claim 1 , further comprising an insulation protecting layer stacked on the upper electrode, wherein the trench part is formed in a shape of a groove by a removed portion of the insulation protecting layer.

10. The acoustic resonator of claim 9 , wherein a bottom surface of the trench part is formed by the insulation protecting layer.

11. The acoustic resonator of claim 1 , further comprising a second trench part formed in the lower electrode, wherein the piezoelectric layer is filled in the second trench part.

12. A method to manufacture an acoustic resonator, comprising:

forming a sacrificial layer on a substrate;

sequentially stacking a lower electrode and a piezoelectric layer on the sacrificial layer;

forming an upper electrode on the piezoelectric layer, wherein the upper electrode comprises a trench part disposed along only two sides of the upper electrode; and

removing the sacrificial layer.

13. The method of claim 12 , wherein the forming of the upper electrode comprises:

forming a first electrode layer on the piezoelectric layer; and

forming a second electrode layer on a region of an upper surface of the first electrode layer excluding the trench part.

14. The method of claim 13 , further comprising forming a frame layer on the second electrode layer.

15. The method of claim 14 , wherein the trench part is disposed in the upper electrode along only two adjacent sides of the frame layer.

16. The method of claim 12 , wherein the forming of the upper electrode comprises:

forming an electrode layer on the piezoelectric layer; and

forming the trench part by removing a portion of the electrode layer.

17. The method of claim 16 , further comprising forming a frame layer on the electrode layer.

18. The acoustic resonator of claim 1 , wherein the two sides are adjacent to each other.

19. The acoustic resonator of claim 1 , wherein the trench part is formed along less than 50% of a perimeter of the upper electrode.

20. An acoustic resonator comprising:

a substrate;

a resonance part comprising

a lower electrode, a piezoelectric layer, and an upper electrode sequentially stacked on the substrate, and

a frame formed on the upper electrode along an edge of the upper electrode; and

a trench part formed in the resonance part, along sides of the upper electrode, and forming a thickness of the resonance part to be asymmetrical,

wherein a portion of the trench part disposed along one of the sides and a portion of the trench part disposed along another of the sides have different widths.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 19, 2016
From: KIM, DAE HO; JEONG, DAE HUN; HAN, WON; SON, SANG UK
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 040665/0429 →
Priority Claims (1)
KR 10-2016-0061047 · May 18, 2016 · national
Continuity (1)
Related Publication 20170338399A1 · Nov 23, 2017