METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A substrate processing apparatus includes a reception part configured to receive film thickness distribution data of a substrate on which a channel region, an insulating film on the channel region, and a first silicon-containing layer as a portion of a silicon-containing film on the insulating film are formed; a substrate mounting part configured to mount the substrate; and a gas supply part configured to supply a gas to form a second silicon-containing layer as a portion of the silicon-containing film on the first silicon-containing layer to have a film thickness distribution different from a film thickness distribution of the film thickness distribution data, thereby correcting a film thickness of the silicon-containing film.
1 . A method of manufacturing a semiconductor device, comprising:
generating film thickness distribution data of a substrate on which a channel region, an insulating film on the channel region, and a first silicon-containing layer as a portion of a silicon-containing film on the insulating film are formed, by measuring a film thickness of the substrate;
receiving the film thickness distribution data of the substrate;
mounting the substrate on a substrate mounting part; and
forming a second silicon-containing layer as a portion of the silicon-containing film on the first silicon-containing layer to have a film thickness distribution different from a film thickness distribution of the film thickness distribution data to thereby correct a film thickness of the silicon-containing film.
2 . The method of claim 1 , wherein forming the second silicon-containing layer includes setting an exposure amount of a main component of a process gas per unit area of the substrate on a peripheral surface of the substrate smaller than that on a central surface thereof when a film thickness distribution of the first silicon-containing layer in the film thickness distribution data indicates that a film thickness of the peripheral surface of the substrate is greater than that of the central surface thereof.
3 . The method of claim 2 , wherein forming the second silicon-containing layer further includes setting a temperature of the central surface of the substrate higher than that of the peripheral surface thereof when the film thickness distribution of the first silicon-containing layer in the film thickness distribution data indicates that the film thickness of the peripheral surface of the substrate is greater than that of the central surface thereof.
4 . The method of claim 1 , wherein forming the second silicon-containing layer includes setting an amount of a process gas supplied to a peripheral surface of the substrate smaller than that supplied to a central surface thereof when a film thickness distribution of the first silicon-containing layer in the film thickness distribution data indicates that a film thickness of the peripheral surface of the substrate is greater than that of the central surface thereof.
5 . The method of claim 4 , wherein forming the second silicon-containing layer further includes setting a temperature of the central surface of the substrate higher than that of the peripheral surface thereof when the film thickness distribution of the first silicon-containing layer in the film thickness distribution data indicates that the film thickness of the peripheral surface of the substrate is greater than that of the central surface thereof.
6 . The method of claim 1 , wherein forming the second silicon-containing layer includes setting a concentration of a main component of a process gas supplied to a peripheral surface of the substrate smaller than that supplied to a central surface thereof when a film thickness distribution of the first silicon-containing layer in the film thickness distribution data indicates that a film thickness of the peripheral surface of the substrate is greater than that of the central surface thereof.
7 . The method of claim 6 , wherein setting the concentration of the main component of the process gas includes setting a supply amount of an inert gas added to the process gas supplied to the peripheral surface greater than a supply amount of an inert gas added to the process gas supplied to the central surface.
8 . The method of claim 1 , wherein forming the second silicon-containing layer includes setting a temperature of a central surface of the substrate higher than that of a peripheral surface thereof when a film thickness distribution of the first silicon-containing layer in the film thickness distribution data indicates that a film thickness of the peripheral surface of the substrate is greater than that of the central surface thereof.
9 . The method of claim 1 , wherein forming the second silicon-containing layer includes setting an exposure amount of a main component of a process gas per unit area of the substrate on a peripheral surface of the substrate greater than that on a central surface thereof when a film thickness distribution of the first silicon-containing layer in the film thickness distribution data indicates that a film thickness of the peripheral surface of the substrate is smaller than that of the central surface thereof.
10 . The method of claim 9 , wherein forming the second silicon-containing layer further includes setting a temperature of the peripheral surface of the substrate higher than that of the central surface when the film thickness distribution of the first silicon-containing layer in the film thickness distribution data indicates that the film thickness of the peripheral surface of the substrate is smaller than that of the central surface thereof.
11 . The method of claim 1 , wherein forming the second silicon-containing layer includes setting an amount of a process gas supplied to a peripheral surface of the substrate greater than that supplied to a central surface thereof when a film thickness distribution of the first silicon-containing layer in the film thickness distribution data indicates that a film thickness of the peripheral surface of the substrate is smaller than that of the central surface thereof.
12 . The method of claim 11 , wherein forming the second silicon-containing layer further includes setting a temperature of the peripheral surface of the substrate higher than that of the central surface thereof when the film thickness distribution of the first silicon-containing layer in the film thickness distribution data indicates that the film thickness of the peripheral surface of the substrate is smaller than that of the central surface thereof.
13 . The method of claim 1 , wherein forming the second silicon-containing layer includes setting a concentration of a main component of a process gas supplied to a peripheral surface of the substrate greater than that supplied to a central surface thereof when a film thickness distribution of the first silicon-containing layer in the film thickness distribution data indicates that a film thickness of the peripheral surface of the substrate is smaller than that of the central surface thereof.
14 . The method of claim 13 , wherein setting the concentration of the main component of the process gas includes setting a supply amount of an inert gas added to the process gas supplied to the central surface greater than a supply amount of an inert gas added to the process gas supplied to the peripheral surface.
15 . The method of claim 1 , wherein forming the second silicon-containing layer includes setting a temperature of a peripheral surface of the substrate higher than that of a central surface thereof when a film thickness distribution of the first silicon-containing layer in the film thickness distribution data indicates that a film thickness of the peripheral surface of the substrate is smaller than that of the central surface thereof.