Semiconductor device
A semiconductor device includes a memory circuit, a first FIFO, a second FIFO and an input/output circuit. The memory circuit outputs data. The first FIFO receives data from the memory circuit and outputs data synchronously with a first clock signal. The second FIFO receives data output from the first FIFO and outputs data synchronously with the first clock signal. The input/output circuit outputs data output from the second FIFO. The second FIFO is disposed in the vicinity of the input/output circuit than the first FIFO.
1. A semiconductor device comprising:
a first semiconductor chip which outputs data, the first semiconductor chip including a first via which conducts from the upper surface to the lower surface thereof;
a second semiconductor chip which is connected to the first via by a first bump;
a first FIFO which is formed on the second semiconductor chip and receives the data outputted from the first semiconductor chip through the first via and the first bump; and
an input/output circuit which outputs the data from the first FIFO and is formed on the second semiconductor chip,
wherein the first FIFO is located closer to the input/output circuit than a middle point of an interconnect line connected between the first bump and the input/output circuit.
2. The semiconductor device according to claim 1 , wherein the first FIFO receives the data from the first semiconductor chip and outputs the data in synchronism with the first clock.
3. The semiconductor device according to claim 2 , wherein data output from the input/output circuit is synchronized with a second clock signal,
further comprising a frequency division circuit frequency-dividing the second clock signal and generating the first clock signal.
4. The semiconductor device according to claim 3 , further comprising a multiplexer disposed between the first FIFO and the input/output circuit, the multiplexer outputting data at the rise and fall of the second clock signal.
5. The semiconductor device according to claim 1 , further comprising a third semiconductor chip which is disposed on the first semiconductor chip and includes a second via conducting from the upper surface to the lower surface thereof, the second via being connected to the first via by a second bump,
wherein data outputted from the third semiconductor chip are inputted to the first FIFO disposed on the second semiconductor chip through the second via, the second bump, the first via and the first bump, and
the first FIFO receives the data from the third semiconductor chip and outputs the data in synchronism with the first clock.
6. The semiconductor device according to claim 2 , further comprising a third semiconductor chip which is disposed on the first semiconductor chip and includes a second via conducting from the upper surface to the lower surface thereof, the second via being connected to the first via by a second bump,
wherein data outputted from the third semiconductor chip are inputted to the first FIFO disposed on the second semiconductor chip through the second via, the second bump, the first via and the first bump, and
the first FIFO receives the data from the third semiconductor chip and outputs the data in synchronism with the first clock.
7. The semiconductor device according to claim 1 , wherein a bus width between the first semiconductor chip and the second semiconductor chip is the same as a bus width between the first bump and the first FIFO on the second semiconductor chip.
8. The semiconductor device according to claim 6 , wherein a bus width between the third semiconductor chip and the second semiconductor chip is the same as a bus width between the first bump and the first FIFO on the second semiconductor chip.
9. The semiconductor device according to claim 1 , wherein the first semiconductor chip includes a memory circuit which outputs the data.