Method of manufacturing semiconductor device having 3D structure
View Patent ↗The technique described herein can form a semiconductor device having a favorable characteristic over a flash memory with a 3D structure. Provided is a method of manufacturing a semiconductor device, including: (a) forming a stacked structure having an insulating film and a sacrificial film stacked therein by performing a combination a plurality of times, the combination including: (a-1) forming the insulating film on a substrate; (a-2) forming the sacrificial film on the insulating film; and (a-3) modifying at least one of the insulating film and the sacrificial film to reduce a difference between stresses of the insulating film and the sacrificial film.
1. A method of manufacturing a semiconductor device, comprising:
(a) forming a stacked structure having an insulating film and a sacrificial film stacked therein by performing a combination a plurality of times, the combination comprising: (a-1) forming the insulating film on a substrate; (a-2) forming the sacrificial film on the insulating film; and (a-3) modifying at least one of the insulating film and the sacrificial film to reduce a difference between stresses of the insulating film and the sacrificial film.
2. The method of claim 1 , wherein (a-2) comprises forming the sacrificial film using: a silicon-containing gas including at least a silicon component and an impurity; and a nitrogen-containing gas including a nitrogen component, and (a-3) comprises modifying the sacrificial film to reduce a tensile stress of the sacrificial film by breaking a chemical bond between the nitrogen component and the impurity in the sacrificial film or breaking a chemical bond between the silicon component and the impurity in the sacrificial film.
3. The method of claim 2 , wherein (a-3) is performed after (a-2) ends and before (a-1) starts.
4. The method of claim 3 , further comprising:
(b) forming a void by removing the sacrificial film after performing (a); and
(c) forming a conductive film in the void.
5. The method of claim 2 , further comprising:
(b) forming a void by removing the sacrificial film after performing (a); and
(c) forming a conductive film in the void.
6. The method of claim 1 , wherein (a-3) is performed after (a-2) ends and before (a-1) starts.
7. The method of claim 6 , further comprising:
(b) forming a void by removing the sacrificial film after performing (a); and
(c) forming a conductive film in the void.
8. The method of claim 1 , wherein (a-1) comprises forming the insulating film using: a silicon-containing gas including at least a silicon component and an impurity; and an oxygen-containing gas including an oxygen component, and (a-3) comprises modifying the insulating film to reduce a compressive stress of the insulating film by breaking a chemical bond between the oxygen component and the impurity in the insulating film or breaking a chemical bond between the silicon component and the impurity in the insulating film.
9. The method of claim 8 , wherein (a-3) is performed after (a-1) ends and before (a-2) starts.
10. The method of claim 9 , further comprising:
(b) forming a void by removing the sacrificial film after performing (a);
(c) repairing the insulating film after performing (b); and
(d) forming a conductive film in the void.
11. The method of claim 8 , further comprising:
(b) forming a void by removing the sacrificial film after performing (a);
(c) repairing the insulating film after performing (b); and
(d) forming a conductive film in the void.
12. The method of claim 1 , wherein (a-3) is performed after (a-1) ends and before (a-2) starts.
13. The method of claim 12 , further comprising:
(b) forming a void by removing the sacrificial film after performing (a);
(c) repairing the insulating film after performing (b); and
(d) forming a conductive film in the void.
14. The method of claim 1 , further comprising:
(b) forming a void by removing the sacrificial film after performing (a);
(c) repairing the insulating film after performing (b); and
(d) forming a conductive film in the void.
15. A method of manufacturing a semiconductor device, comprising:
(a) placing a substrate on a substrate support disposed in a processing space, the substrate having an insulating film on a surface thereof;
(b) forming a sacrificial film on the insulating film using: a silicon-containing gas including at least a silicon component and an impurity; and a nitrogen-containing gas including a nitrogen component; and
(c) modifying at least one of the insulating film and the sacrificial film to reduce a difference between stresses of the insulating film and the sacrificial film.