Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device includes forming a seed layer on a substrate by alternately performing supplying a halogen-based first process gas to the substrate and supplying a non-halogen-based second process gas to the substrate, and forming a film on the seed layer by supplying a third process gas to the substrate. A pressure of a space where the substrate exists in the act of supplying the first process gas is set higher than a pressure of the space where the substrate exists in the act of supplying the second process gas.
1. A method of manufacturing a semiconductor device, comprising:
forming a seed layer on a substrate by alternately performing supplying a halogen-based first process gas to the substrate and supplying a non-halogen-based second process gas to the substrate; and
forming a film on the seed layer by supplying a third process gas to the substrate,
wherein a pressure of a space where the substrate exists in the act of supplying the first process gas is set higher than a pressure of the space where the substrate exists in the act of supplying the second process gas,
wherein while forming the seed layer, a temperature of the substrate is set to be a first temperature, and while forming the film, the temperature of the substrate is set to be a second temperature equal to or higher than the first temperature, and
wherein the first temperature is a temperature at which the first process gas and the third process gas are not pyrolized and the second process gas is pyrolized, and the second temperature is a temperature at which the second process gas and the third process gas are pyrolized.
2. The method of claim 1 , wherein the pressure of the space where the substrate exists in the act of supplying the second process gas is set higher than a pressure of the space where the substrate exists in the act of supplying the third process gas.
3. The method of claim 1 , wherein the pressure of the space where the substrate exists in the act of supplying the first process gas is set to fall within a range of 400 to 1000 Pa.
4. The method of claim 3 , wherein the pressure of the space where the substrate exists in the act of supplying the second process gas is set to fall within a range of 250 to 350 Pa.
5. The method of claim 4 , wherein a pressure of the space where the substrate exists in the act of supplying the third process gas is set to fall within a range of 30 to 200 Pa.
6. The method of claim 1 , wherein a pyrolysis temperature of the second process gas is lower than a pyrolysis temperature of the third process gas.
7. The method of claim 1 , wherein each of the first process gas, the second process gas and the third process gas contains a main element that constitutes the film.
8. The method of claim 7 , wherein the main element includes silicon.
9. The method of claim 1 , wherein the first process gas includes a chlorosilane compound, the second process gas includes a silicon hydride compound, and the third process gas includes a silicon hydride compound.
10. The method of claim 9 , wherein the second process gas includes a higher order silicon hydride compound than the third process gas, and the third process gas includes a lower order silicon hydride compound than the second process gas.
11. The method of claim 1 , wherein the second process gas has a molecular structure different from a molecular structure of the third process gas.
12. A non-transitory computer-readable recording medium storing a program that causes a computer to perform:
forming a seed layer on a substrate by alternately performing supplying a halogen-based first process gas to the substrate and supplying a non-halogen-based second process gas to the substrate; and
forming a film on the seed layer by supplying a third process gas to the substrate,
wherein a pressure of a space where the substrate exists in the act of supplying the first process gas is set higher than a pressure of the space where the substrate exists in the act of supplying the second process gas,
wherein while forming the seed layer, a temperature of the substrate is set to be a first temperature, and while forming the film, the temperature of the substrate is set to be a second temperature equal to or higher than the first temperature, and
wherein the first temperature is a temperature at which the first process gas and the third process gas are not pyrolized and the second process gas is pyrolized, and the second temperature is a temperature at which the second process gas and the third process gas are pyrolized.