IP Library Granted Patent US 10,299,368
Granted Patent B2
US 10,299,368 · App. 15/387,278 · Granted May 21, 2019

Surface integrated waveguides and circuit structures therefor

Inventors: Shaowu Huang (Sunnyvale, CA); Javier A. Delacruz (San Jose, CA)
Assignee: Invensas Corporation
H05K1/0228H01P1/207H01P1/2088H01P3/121H05K3/30H01L2224/48091H01L2224/48227H01P1/39H01P5/19H01P7/065H01P11/002H01Q13/18H05K2201/10287
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Quick Facts
Patent No.
US 10,299,368
App. No.
15/387,278
Granted
May 21, 2019
Kind
B2
Abstract

Apparatus, and corresponding method, relates generally to a microelectronic device. In such an apparatus, a first conductive layer is for providing a lower interior surface of a circuit structure. A plurality of wire bond wires are interconnected to the lower interior surface and spaced apart from one another for providing at least one side of the circuit structure. A second conductive layer is for providing an upper interior surface of the circuit structure spaced apart from the lower interior surface by and interconnected to the plurality of wire bond wires. The plurality of wire bond wires, the first conductive layer and the second conductive layer in combination define at least one opening in the at least one side for a signal port of the circuit structure. Such circuit structure may be a signal guide circuit structure, such as for a signal waveguide or signal cavity for example.

Claims (19)

1. An apparatus for a microelectronic device, comprising:

a first conductive layer for providing a lower interior surface of a circuit structure;

a plurality of wire bond wires interconnected to the lower interior surface of the first conductive layer with wire bonds and spaced apart from one another for providing at least one side of the circuit structure;

a second conductive layer for providing an upper interior surface of the circuit structure spaced apart from the lower interior surface by and interconnected to the plurality of wire bond wires; and

the plurality of wire bond wires, the first conductive layer and the second conductive layer in combination defining at least one opening in the at least one side for a signal port of the circuit structure.

2. The apparatus according to claim 1 , wherein the at least one opening is for electromagnetic signals with wavelengths in a range of approximately 0.5 to 1.5 mm for suppressing at least one of crosstalk, electromagnetic interference or electromagnetic radiation with wavelengths longer than 1.5 mm.

3. The apparatus according to claim 1 , wherein the at least one opening is for electromagnetic signals with wavelengths in a range of approximately 0.5 to 3.0 mm for suppressing at least one of crosstalk, electromagnetic interference or electromagnetic radiation with wavelengths longer than 3.0 mm.

4. The apparatus according to claim 1 , wherein the at least one opening is for electromagnetic signals with wavelengths in a range of approximately 3.0 to 15 mm for suppressing at least one of crosstalk, electromagnetic interference or electromagnetic radiation with wavelengths longer than 15 mm.

5. The apparatus according to claim 1 , wherein the lower conductive layer is formed on or as part of an upper surface of a substrate.

6. The apparatus according to claim 5 , wherein the circuit structure is for a cavity.

7. The apparatus according to claim 5 , wherein the circuit structure is for a waveguide.

8. The apparatus according to claim 7 , wherein the waveguide is for electromagnetic signals with wavelengths in a range of approximately 0.5 to 1.5 mm.

9. The apparatus according to claim 7 , wherein the waveguide is for electromagnetic signals with wavelengths in a range of approximately 0.5 to 3.0 mm.

10. The apparatus according to claim 7 , wherein the waveguide is for electromagnetic signals with wavelengths in a range of approximately 3 to 15 mm.

11. The apparatus according to claim 7 , wherein:

the signal port is a first signal port;

the plurality of wire bond wires comprises a first set and a second set of the plurality of wire bond wires interconnected to the lower conductive layer and the upper conductive layer for providing a first side and a second side, respectively, opposite one another for the at least one side of the circuit structure; and

the first set, the second set, the first conductive layer, and the second conductive layer in combination defining a first opening and a second opening for the at least one opening in the at least one side for the first signal port and a second signal port, respectively, of the circuit structure.

12. The apparatus according to claim 11 , wherein the plurality of wire bond wires are spaced apart from one another by less than 1/10 th of a signal wavelength for use of the circuit structure with wavelengths less than approximately 1.5 mm.

Assignments (4)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073508/0758 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0807 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 21, 2016
From: HUANG, SHAOWU; DELACRUZ, JAVIER A.
To: INVENSAS CORPORATION
Reel/Frame 041164/0130 →
Continuity (1)
Related Publication 20180177041A1 · Jun 21, 2018