Method for manufacturing a flexible device having transistors
A flexible device is manufactured at low temperatures. A second substrate is bonded to a first substrate by a first adhesive layer. A first insulating layer, a transistor, and a second insulating layer are formed over the second substrate. Then, the first substrate and the second substrate are separated from each other while being heated at a first temperature. The heat resistant temperatures of the first substrate, the second substrate, and the first adhesive layer are a second temperature, a third temperature, and a fourth temperature, respectively. Each of the first insulating layer, the second insulating layer, and the transistor is formed at a temperature higher than or equal to room temperature and lower than the fourth temperature. The third temperature is higher than the fourth temperature and lower than the second temperature. The first temperature is higher than the fourth temperature and lower than the third temperature.
1. A method for manufacturing a flexible device, comprising the steps of:
bonding a second substrate to a first substrate by a first adhesive layer, the first adhesive layer comprising a thermoplastic material;
forming a first insulating layer over the second substrate;
forming a transistor comprising a gate electrode, a gate insulating layer, an oxide semiconductor layer containing indium, gallium, and zinc, a source electrode, and a drain electrode over the first insulating layer;
forming a second insulating layer covering the transistor; and
softening the first adhesive layer by performing a heat treatment at a first temperature, thereby separating the first substrate and the second substrate from each other,
wherein the second substrate is more flexible than the first substrate,
wherein the first substrate comprises a material whose heat resistant temperature is a second temperature,
wherein the second substrate comprises a material whose heat resistant temperature is a third temperature,
wherein a heat resistant temperature of the first adhesive layer is a fourth temperature,
wherein the oxide semiconductor layer is formed at a fifth temperature which is lower than the fourth temperature,
wherein the third temperature is higher than the fourth temperature and lower than the second temperature,
wherein the first temperature is higher than the fourth temperature and lower than the third temperature,
wherein the fifth temperature is higher than or equal to 80° C. and lower than or equal to 220° C., and
wherein a width of the first adhesive layer is smaller from than each of a width of the first substrate and a width of the second substrate.
2. The method for manufacturing a flexible device, according to claim 1 ,
wherein the fifth temperature is higher than or equal to 80° C. and lower than or equal to 150° C.
3. The method for manufacturing a flexible device, according to claim 1 ,
wherein the first adhesive layer is provided in a region along an outer edge of the second substrate.
4. The method for manufacturing a flexible device, according to claim 1 ,
wherein the oxide semiconductor layer contains a region comprising crystal parts with crystal orientation parallel to c-axis.
5. The method for manufacturing a flexible device, according to claim 1 ,
wherein the oxide semiconductor layer contains a region comprising nanocrystals.
6. The method for manufacturing a flexible device, according to claim 1 ,
wherein the thermoplastic material is selected from the group consisting of polyamide-imide, polyetherimide, polyarylate, polysulfone, polyethersulfone, polyphenilensulfide, polytetrafluoroethylene, chlorotrifluoroethylene, polyvinylidene fluoride, and polyvinyl fluoride.
7. The method for manufacturing a flexible device, according to claim 1 ,
wherein the third temperature is higher than or equal to 300° C. and lower than or equal to 500° C., and
wherein the second temperature is higher than 500° C.
8. The method for manufacturing a flexible device, according to claim 1 ,
wherein an outer edge of the first adhesive layer is located inward from an outer edge of the second substrate.
9. The method for manufacturing a flexible device, according to claim 1 , wherein, when viewed from above, a shape of the first adhesive layer is smaller than each of a shape of the first substrate and a shape of the second substrate.
10. A method for manufacturing a display device, comprising the steps of:
bonding a second substrate to a first substrate by a first adhesive layer, the first adhesive layer comprising a thermoplastic material;
forming a first insulating layer over the second substrate;
forming a transistor comprising a gate electrode, a gate insulating layer, an oxide semiconductor layer containing indium, gallium, and zinc, a source electrode, and a drain electrode over the first insulating layer;
forming a second insulating layer covering the transistor;
forming a display element over the second insulating layer, the display element electrically connected to the transistor;
forming a protective layer to cover the display element; and
softening the first adhesive layer by performing a heat treatment at a first temperature, thereby separating the first substrate and the second substrate from each other,
wherein the first substrate comprises a material whose heat resistant temperature is a second temperature,
wherein the second substrate comprises a material whose heat resistant temperature is a third temperature,
wherein a heat resistant temperature of the first adhesive layer is a fourth temperature,
wherein the oxide semiconductor layer is formed at a fifth temperature which is lower than the fourth temperature,
wherein the third temperature is higher than the fourth temperature and lower than the second temperature,
wherein the first temperature is higher than the fourth temperature and lower than the third temperature, and
wherein the fifth temperature is higher than or equal to 80° C. and lower than or equal to 220° C., and
wherein a width of the first adhesive layer is smaller than each of a width of the first substrate and a width of the second substrate.
11. The method for manufacturing a display device, according to claim 10 ,
wherein the second substrate is more flexible than the first substrate.
12. The method for manufacturing a display device, according to claim 10 , further comprising a step of bonding a third substrate to the display element by a second adhesive layer before the step of separating the first substrate and the second substrate from each other,
wherein the third substrate is more flexible than the first substrate,
wherein the third substrate comprises a material whose heat resistant temperature is higher than the fourth temperature and lower than the second temperature, and
wherein the second adhesive layer comprises a material whose heat resistant temperature is higher than the fourth temperature and lower than the second temperature.
13. The method for manufacturing a display device, according to claim 10 , further comprising a step of bonding a third substrate to the display element by a second adhesive layer after the step of separating the first substrate and the second substrate from each other,
wherein the third substrate is more flexible than the first substrate.
14. The method for manufacturing a display device, according to claim 10 ,
wherein the fifth temperature is higher than or equal to 80° C. and lower than or equal to 150° C.
15. The method for manufacturing a display device, according to claim 10 ,
wherein the thermoplastic material is selected from the group consisting of polyamide-imide, polyetherimide, polyarylate, polysulfone, polyethersulfone, polyphenilensulfide, polytetrafluoroethylene, chlorotrifluoroethylene, polyvinylidene fluoride, and polyvinyl fluoride.
16. The method for manufacturing a display device, according to claim 10 ,
wherein the first adhesive layer is provided in a region along an outer edge of the second substrate.
17. The method for manufacturing a display device, according to claim 10 ,
wherein the oxide semiconductor layer contains a region comprising crystal parts with crystal orientation parallel to c-axis.
18. The method for manufacturing a display device, according to claim 10 ,
wherein the oxide semiconductor layer contains a region comprising nanocrystals.
19. The method for manufacturing a flexible device, according to claim 10 , wherein an outer edge of the first adhesive layer is located inward from an outer edge of the second substrate.
20. The method for manufacturing a flexible device, according to claim 10 , wherein, when viewed from above, a shape of the first adhesive layer is smaller than each of a shape of the first substrate and a shape of the second substrate.