Method of manufacturing semiconductor device
View Patent ↗Disclosed is a method of manufacturing a semiconductor device. The method includes: (a) accommodating a substrate having a plurality of carbon-containing films protruding from a surface of the substrate; (b) forming a silicon-containing film on a surface of the plurality of carbon-containing films and a surface of the substrate by supplying a silicon-containing gas to the substrate; (c) forming a silicon/oxygen-containing film by supplying a first plasma of an oxygen-containing gas to the substrate; and (d) forming a silicon oxide film by supplying a second plasma of the oxygen-containing gas to the substrate after performing (c).
1. A method of manufacturing a semiconductor device, comprising:
(a) providing a substrate having a plurality of carbon-containing films protruding from a surface of the substrate;
(b) forming a silicon-containing film on a surface of the plurality of carbon-containing films and a surface of the substrate by supplying a silicon-containing gas to the substrate;
(c) forming a silicon/oxygen-containing film by supplying a first plasma of an oxygen-containing gas to the silicon-containing film to convert the silicon-containing film into the silicon/oxygen-containing film; and
(d) forming a silicon oxide film by supplying a second plasma of the oxygen-containing gas to the silicon/oxygen-containing film to convert the silicon/oxygen-containing film into the silicon oxide film,
wherein (b) comprises:
(b-1) supplying the silicon-containing gas at a first temperature; and
(b-2) supplying the silicon-containing gas at a second temperature higher than the first temperature after performing (b-1),
wherein the first temperature is lower than a temperature such that carbon in the plurality of carbon-containing films is not separated from the plurality of carbon-containing films.
2. The method of claim 1 , wherein an amount of an ion component of the second plasma is less than that of an ion component of the first plasma.
3. The method of claim 1 , wherein the first plasma comprises capacitively coupled plasma and the second plasma comprises inductively coupled plasma.
4. The method of claim 2 , wherein the first plasma comprises capacitively coupled plasma and the second plasma comprises inductively coupled plasma.
5. The method of claim 1 , wherein (b) and (c) are performed in a first process chamber, and (d) is performed in a second process chamber in communication with the first process chamber after transferring the substrate to the second process chamber after performing (c).
6. The method of claim 2 , wherein (b) and (c) are performed in a first process chamber, and (d) is performed in a second process chamber in communication with the first process chamber after transferring the substrate to the second process chamber after performing (c).
7. The method of claim 4 , wherein (b) and (c) are performed in a first process chamber, and (d) is performed in a second process chamber in communication with the first process chamber after transferring the substrate to the second process chamber after performing (c).