BULK BAW RESONATOR HAVING ELECTRICALLY INSULATING SUBSTRATE
A bulk acoustic wave (BAW) resonator is disclosed. The BAW resonator includes an electrically insulating substrate, and a first electrode disposed on and in direct contact with an upper surface of the electrically insulating substrate. A second electrode is disposed over a piezoelectric layer, which is disposed over the first electrode.
1 . A bulk acoustic wave (BAW) resonator, comprising:
an electrically insulating substrate;
a first electrode disposed on and in direct contact with an upper surface of the electrically insulating substrate;
a second electrode; and
a piezoelectric layer disposed between the first and second electrodes.
2 . The BAW resonator of claim 1 , wherein the electrically insulating substrate has an electrical resistivity between approximately 1×10 6 Ω-m and approximately 5×10 16 Ω-m.
3 . The BAW resonator of claim 1 , wherein the electrically insulating substrate comprises one of silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), benzocylcobutene (BCB), polyimide, and non-piezoelectric aluminum nitride (AlN).
4 . The BAW resonator of claim 1 , wherein an acoustic reflector exists in the electrically insulating substrate and beneath the first electrode.
5 . The BAW resonator of claim 4 , wherein the acoustic reflector comprises a cavity extending from an upper surface of the electrically insulating substrate.
6 . The BAW resonator of claim 4 , wherein the acoustic reflector comprises an acoustic Bragg reflector disposed in the electrically insulating layer.
7 . The BAW resonator of claim 1 , further comprising another layer disposed beneath the electrically insulating substrate.
8 . The BAW resonator of claim 7 , wherein the other layer comprises a semiconductor material.
9 . The BAW resonator of claim 1 , wherein the piezoelectric layer comprises aluminum nitride (AlN), doped with scandium (Sc), and a minimum atomic percentage of Sc is greater than approximately 5.0% and a maximum atomic percentage of Sc is approximately 44.0%.
10 . The BAW resonator of claim 1 , wherein the first electrode does not comprise either tungsten (W) or molybdenum (Mo).
11 . The BAW resonator of claim 1 , wherein the piezoelectric layer extends over an edge of the first electrode, and is in direct contact with an upper surface of the electrically insulating substrate.
12 . The BAW resonator of claim 1 , further comprising:
a first polymer post;
a second polymer post; and
a polymer lid disposed over the first and second polymer posts, wherein a void exists between an inner surface of the polymer lid, and an opposing inner surface of the electrically insulating layer.
13 . An electrical filter comprising a plurality of the BAW resonators of claim 1 .
14 . A bulk acoustic wave (BAW) resonator, comprising:
an electrically insulating substrate;
a first electrode disposed over the electrically insulating substrate;
a second electrode comprising a plurality of sides;
a piezoelectric layer disposed between the first and second electrodes;
a bridge disposed adjacent to one of the plurality of sides of the second electrode; and
a protective layer disposed on a lower surface of the bridge, and between the lower surface of the bridge and a gap defined by the bridge.
15 . The BAW resonator of claim 14 , further comprising a cantilevered portion disposed on at least one of the plurality of sides of the second electrode, but not on the side of the second electrode comprising the bridge, wherein the protective layer is disposed on a lower surface of the cantilevered portion, and between the lower surface of the cantilevered portion and a gap defined by the cantilevered portion.
16 . The BAW resonator as claimed in claim 15 , wherein the first electrode, the second electrode, the bridge, and the cantilevered portion each comprise molybdenum (Mo), or tungsten (W), or a combination of Mo and W, and the protective layer prevents Xenon Difluoride (XeF 2 ) from substantially deteriorating any of the first electrode, the second electrode, the bridge, and the cantilevered portion.
17 . The BAW resonator as claimed in claim 16 , wherein the protective layer comprises aluminum nitride.
18 . The BAW resonator of claim 14 , wherein the electrically insulating substrate has an electrical resistivity between approximately 1×10 6 Ω-m and approximately 5×10 16 Ω-m.
19 . The BAW resonator of claim 14 , wherein the electrically insulating substrate comprises one of silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), benzocylcobutene (BCB), polyimide, and non-piezoelectric aluminum nitride (AlN).
20 . The BAW resonator of claim 14 , further comprising:
a first polymer post;
a second polymer post; and
a polymer lid disposed over the first and second polymer posts, wherein a void exists between an inner surface of the polymer lid, and an opposing inner surface of the electrically insulating layer.
21 . A wireless communication device, comprising:
a semiconductor substrate;
an acoustic stack comprising a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrode; and
an electrically insulating layer disposed between the acoustic stack and the semiconductor substrate, wherein the electrically insulating layer substantially electrically isolates the acoustic stack from electromagnetic radiation generated in the semiconductor substrate.
22 . The wireless communication device of claim 21 , wherein the semiconductor substrate comprises an upper surface with an outer perimeter, and wherein the electrically insulating layer is disposed on the upper surface of the semiconductor substrate covering entirely the outer perimeter.
23 . The wireless communication device of claim 22 , wherein the semiconductor substrate comprises a substrate outer perimeter and the electrically insulating layer has a layer outer perimeter, and wherein the substrate outer perimeter and the layer outer perimeter are aligned.
24 . The wireless communication device of claim 21 , further comprising an acoustic reflector disposed in the electrically insulating layer, and between the acoustic stack and the electrically insulating layer.
25 . The wireless communication device of claim 24 , wherein the electrically insulating layer comprises a first insulating layer comprising a first material and a second insulating layer comprising a second material.
26 . The wireless communication device of claim 25 , wherein the first material is different from the second material.
27 . The wireless communication device of claim 21 , wherein the electrically insulating layer has an electrical resistivity between approximately 1×10 6 Ω-m and approximately 5×10 16 Ω-m.
28 . The wireless communication device of claim 21 , wherein the electrically insulating layer comprises one of silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), benzocylcobutene (BCB), polyimide, and non-piezoelectric aluminum nitride (AlN).
29 . The wireless communication device of claim 21 , further comprising:
a first polymer post;
a second polymer post; and
a polymer lid disposed over the first and second polymer posts, wherein a void exists between an inner surface of the polymer lid, and an opposing inner surface of the electrically insulating layer.
30 . The wireless communication device of claim 21 , wherein the first electrode is in direct contact with an upper surface of the electrically insulating layer.
31 . The wireless communication device of claim 21 , wherein the piezoelectric layer extends over an edge of the first electrode, and is in direct contact with an upper surface of the electrically insulating layer.