Multi-layer redistribution layer for wafer-level packaging
Aspects of the embodiments include a semiconductor package that includes a printed circuit board (PCB) and a semiconductor die. The semiconductor die including an interconnect landing pad on an active side of the semiconductor die; a solder material on the interconnect landing pad; a partial redistribution layer on the active side of the semiconductor die; and a protection layer on the partial redistribution layer, the protection layer comprising the solder material. The semiconductor die is electrically connected to the PCB by the solder material on the interconnect landing pad. The partial redistribution layer and the protection layer are separated from the printed circuit board by an air gap.
1. A semiconductor die structure, comprising:
a semiconductor die;
a redistribution structure at a side of the semiconductor die, wherein the redistribution structure includes an interconnect landing pad and an electrical circuit element, wherein the interconnect landing pad and the electrical circuit element are at least partially in a same metal layer of the redistribution structure;
a first portion of solder material on the interconnect landing pad; and
a second portion of solder material on the electrical circuit element, wherein a thickness of the first portion of solder material is greater than a thickness of the second portion of solder material.
2. The semiconductor die structure of claim 1 , wherein the semiconductor die includes a die pad electrically coupled to the interconnect landing pad.
3. The semiconductor die structure of claim 1 , wherein:
the second portion of solder material covers a sidewall of the electrical circuit element.
4. The semiconductor die structure of claim 1 , wherein the electrical circuit element includes an inductor or a capacitor.
5. The semiconductor die structure of claim 1 , wherein the first portion of solder material includes a solder ball.
6. The semiconductor die structure of claim 1 , further comprising:
a mold compound on the semiconductor die.
7. The semiconductor die structure of claim 6 , wherein the mold compound covers a sidewall of the semiconductor die.
8. The semiconductor die structure of claim 1 , wherein the electrical circuit element is a bridge between different die pads of the semiconductor die.
9. The semiconductor die structure of claim 1 , wherein the electrical circuit element has a same thickness as the interconnect landing pad.
10. The semiconductor die structure of claim 1 , wherein no solder resist is disposed around the interconnect landing pad.
11. The semiconductor die structure of claim 1 , wherein the second portion of solder material does not cover a sidewall of the electrical circuit element.
12. A semiconductor package, comprising:
a package substrate; and
a semiconductor die structure, including:
a semiconductor die,
a redistribution structure on the semiconductor die, wherein the redistribution structure includes an interconnect landing pad and an electrical circuit element, wherein the interconnect landing pad and the electrical circuit element are at least partially coplanar,
a first portion of solder material on the interconnect landing pad, and
a second portion of solder material on the electrical circuit element;
wherein:
the semiconductor die is electrically connected to the package substrate by the first portion of solder material on the interconnect landing pad; and
the second portion of solder material does not contact the package substrate.
13. The semiconductor package of claim 12 , wherein the semiconductor die includes a die pad electrically coupled to the interconnect landing pad.
14. The semiconductor package of claim 12 , wherein:
the second portion of solder material covers a sidewall of the electrical circuit element.
15. The semiconductor package of claim 12 , wherein the second portion of solder material does not cover a sidewall of the electrical circuit element.
16. The semiconductor package of claim 12 , wherein the electrical circuit element includes an inductor.
17. The semiconductor package of claim 12 , wherein the electrical circuit element includes a capacitor.
18. The semiconductor package of claim 12 , wherein the first portion of solder material includes a solder ball.
19. The semiconductor package of claim 12 , further comprising:
a mold compound on the semiconductor die.
20. The semiconductor package of claim 12 , wherein the electrical circuit element is a bridge between different die pads of the semiconductor die.
21. The semiconductor package of claim 12 , wherein the electrical circuit element has a same thickness as the interconnect landing pad.
22. The semiconductor package of claim 12 , wherein no solder resist is disposed around the interconnect landing pad.
23. The semiconductor package of claim 12 , wherein the package substrate includes a printed circuit board (PCB).
24. The semiconductor package of claim 12 , wherein a thickness of the first portion of solder material is greater than a thickness of the second portion of solder material.
25. The semiconductor package of claim 12 , further comprising:
a mold compound between the second portion of solder material and the package substrate.