Self-propagating low-temperature synthesis and pre-treatment of chalcogenides for spark plasma sintering
A method is provided for producing an article which is transparent to IR wavelength in the region of 4 μm to 9 μm. The method includes the steps of (a) Producing ultra-fine powders of ZnS, (b) followed by pretreatment of the ultra-fine powders under reduced gas conditions including H2, H2S, N2, Ar and mixtures there of (c) followed by vacuum (3×10 −6 torr) treatment to remove oxygen and sulfates adsorbed to the surface disposing a plurality of nano-particles on a substrate, wherein said nanoparticles comprise ZnS with ultra-high purity of cubic phase; (b) subjecting the nano-particles to spark plasma sintering thereby producing a sintered ZnS product with IR transmission reaching 75% in the wavelength range of 4 μm to 9 μm.
1. A process for producing an article which is transparent to infrared in the wavelength range of 3 μm to 12 μm, the process comprising the steps of:
synthesizing ultrafine powders utilizing oxidizer including metal acetates, metal nitrates with glycine, thiourea, and thioacetamide as fuels, through self-propagating low temperature synthesis and generation of population of ZnS nanoparticles;
pre-treating said ZnS nanoparticles with H 2 S, H 2 , N 2 , Ar gases or mixtures of gases thereof;
vacuum treating said ZnS nanoparticles to remove moisture, oxygen and sulfates;
filling said ZnS nanoparticles inside a die-set cavity and applying pressure on said ZnS nanoparticles;
subjecting said ZnS nanoparticles to pulsed spark plasma treatment, and sintering said ZnS nanoparticles to form ZnS disk;
subjecting said ZnS disk to hot-isostatic press and obtaining a final product that is transparent to visible, mid IR and longwave infrared wavelength region, wherein said ZnS disk having an infrared transmission is greater than or equal to 65%to 75% in the wavelength between 3 μm to 12 μm at the thickness of 4 mm.
2. The process according to claim 1 , wherein the pre-treating of said ZnS nanoparticles is preformed in a mixture of H 2 S and H 2 with volume ratio 1:4:9, at a temperature in the range of 450° C. to 700° C. and duration in the range of 2 to 4 hours.
3. The process according to claim 1 , wherein the pre-treating of said ZnS nanoparticles is preformed in a mixture of H 2 S and N 2 with volume ratio 1:4:9, at a temperature in the range of 450° C. to 700° C. and duration in the range of 2 to 4 hours.
4. The process according to claim 1 , wherein the pre-treating of said ZnS nanoparticles is preformed in a mixture of H 2 S and Ar with volume ratio 1:4:9, at a temperature in the range of 450° C. to 700° C. and duration in the range of 2 to 4 hours.
5. The process according to claim 1 , wherein said vacuum treating of ZnS nanoparticles is preformed in the range of temperatures less than 600° C. and in the range of vacuum of 1×10 −3 Torr to 3×10 −6 Torr for a time duration of 3 to 6 hours.
6. The process according to claim 1 , wherein said pulsed spark plasma can be replaced by laser sintering or microwave sintering or vacuum sintering or cold-isostatic pressing or any combinations thereof.
7. The process according to claim 1 , wherein said die-set is passivated with protective coating to prevent contamination entering the final product.
8. The process according to claim 1 , wherein said ZnS disk having an infrared transmission in the range of 70%to 75% in the wavelength range of 4 μm to 9 μm at the thickness of 4 mm.
9. The process according to claim 1 , wherein a nano-grained ZnS have a knoop hardness in the range of 290-320 kg/mm 2 .
10. A process for producing an article which is transparent to infrared in the wavelength range of 3 μm to 12 μm, the process comprising the steps of:
synthesizing ultrafine powders utilizing oxidizer including metal acetates and metal nitrates with thiourea, SeS 2 or glycine as fuels, through self-propagating low temperature synthesis and generation of population of ZnSe nanoparticles;
pre-treating said ZnSe nanoparticles with H 2 S, H 2 , N 2 , Ar gases or mixtures of gases thereof;
vacuum treating said ZnSe nanoparticles to remove sulfates, oxygen and moisture;
filling said ZnSe nanoparticles inside a die-set cavity and applying pressure on said ZnSe nanoparticles;
subjecting said ZnSe nanoparticles to pulsed spark plasma treatment, and sintering said ZnSe nanoparticles to form ZnSe disk;
subjecting said ZnSe disk to hot isostatic press and obtaining a final product that is transparent to an infrared wavelength.
11. A process for producing an article which is transparent to infrared in the wavelength range of 3 μm to 12 μm, the process comprising the steps of: synthesizing ultrafine powders utilizing oxidizer including metal acetates, metal nitrates with thiourea or glycine through as fuels, self-propagating low temperature synthesis and generation of population of CdS nanoparticle;
pre-treating said CdS nanoparticles with H 2 S, H 2 , N 2 , Ar gases or mixtures of gases thereof;
vacuum treating said CdS nanoparticlest o remove moisture, sulfates and oxygen;
filling said CdS nanoparticles inside a die-set cavity and applying pressure on said CdS nanoparticles;
subjecting said CdS nanoparticles to pulsed spark plasma treatment, and sintering said CdS nanoparticles to form CdS disk;
subjecting said CdS disk to hot isostatic press and thus obtaining a final product that is transparent to an infrared wavelength.